摘要:
A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.
摘要:
An anode active material is provided. The anode active material includes a silicon thin film containing crystalline silicon having a Raman shift in a Raman spectrum ranging from about 490 to about 500 cm−1 and a full width at half maximum (FWHM) ranging from about 10 to about 30 cm−1. The volume of the anode active material does not change significantly during charging and discharging. Thus, a lithium battery employing the anode active material has an excellent capacity retention rate and a longer cycle lifetime.
摘要:
Methods of manufacturing a field effect transistor include forming a gate pattern on a substrate. A gate spacer is formed on a sidewall of the gate pattern. A first layer is formed from a surface of the substrate and contacting the gate spacer using a first selective epitaxial growth (SEG) process at a first temperature. A second layer is formed from a surface of the first layer and contacting the gate spacer using a second SEG process at a second temperature. The second temperature is lower than the first temperature. The first and second layers define elevated source/drain regions.
摘要:
A lithium battery binder includes polyvinylidenefluoride(PVDF) having an IR absorption peak ratio of Iγ in a range from 0.35 to 1.00, wherein Iγ is equal to I820-850/I860-880 where I820-850 is a peak height resulting from a CH2 rocking band in γ-phase PVDF and I860-880 is a peak height resulting from backbones in α- and γ-phase PVDF. The lithium battery containing the cathode and/or the anode which incorporates the binder improves the charge/discharge characteristics and the lifespan characteristics of a lithium battery.
摘要:
Methods of manufacturing a field effect transistor include forming a gate pattern on a substrate. A gate spacer is formed on a sidewall of the gate pattern. A first layer is formed from a surface of the substrate and contacting the gate spacer using a first selective epitaxial growth (SEG) process at a first temperature. A second layer is formed from a surface of the first layer and contacting the gate spacer using a second SEG process at a second temperature. The second temperature is lower than the first temperature. The first and second layers define elevated source/drain regions.
摘要:
A process for preparing a malonic acid monoester or &bgr;-ketoester from an epoxide includes the steps of reacting an epoxide with carbon monoxide and an alcohol in the presence of a catalytic amount of a cobalt compound and at least one promoter to produce a &bgr;-hydroxyester, separating the &bgr;-hydroxyester from the cobalt compound and the promoter, and oxidizing the &bgr;-hydroxyester to produce a malonic acid monoester or &bgr;-ketoester.
摘要:
Cucurbituril derivatives, their preparation methods and uses. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20, wherein the cucurbituril derivatives having the formula (1), where n=6, R1=H, R2=H and X=O, and n=5, R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.
摘要:
Cucurbituril derivatives, their preparation methods and uses. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20, wherein the cucurbituril derivatives having the formula (1), where n=6, R1=H, R2=H and X=O, and n=5, R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.
摘要:
A process for preparing a 1,3-alkandiol from a 3-hydroxyester, comprises preparing a catalyst by adding an alkaline precipitator to an aqueous copper salt solution to form copper hydroxide particles, and aging the particles following the addition of a colloidal silica thereto; activating the catalyst by reduction with a H2 gas or a H2-containing gas and applying a pressure of about 5 psig to about 2000 psig at a temperature of about 100° C. to about 250° C. in the presence of an activation solvent; and hydrogenating a 3-hydroxyester in a liquid phase slurry with a H2 gas or a H2-containing gas and applying a pressure of about 50 psig to about 3000 psig at a temperature of about 100° C. to about 250° C. in the presence of the activated catalyst and a reaction solvent, whereby a 1,3-alkanediol can be selectively prepared from a 3-hydroxyester with a high yield.
摘要:
Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.