公开(公告)号：US08883268B2

公开(公告)日：2014-11-11

申请号：US13583755

申请日：2011-03-08

申请人： Bert Braune ,  Christina Keith ,  Ivan Galesic

发明人： Bert Braune ,  Christina Keith ,  Ivan Galesic

IPC分类号： B05D1/00 ,  B05D3/14 ,  H01L51/52

CPC分类号： B05D1/60 ,  B05D1/62 ,  B05D3/142 ,  H01L51/5253

摘要： A method of producing a parylene coating on at least one surface of at least one component includes providing a first gas containing parylene monomers and depositing the parylene monomers on the at least one surface of the component by supplying the first gas containing the parylene monomers by a first nozzle to the at least one surface, wherein the component is disposed in an environment at atmospheric pressure.

摘要翻译： 在至少一种组分的至少一个表面上生产聚对二甲苯涂层的方法包括提供含有聚对二甲苯单体的第一气体，并通过将含有聚对二甲苯单体的第一气体通过 第一喷嘴到所述至少一个表面，其中所述部件设置在大气压的环境中。

公开(公告)号：US08283756B2

公开(公告)日：2012-10-09

申请号：US11841294

申请日：2007-08-20

申请人： Ivan Galesic ,  Joachim Mahler ,  Alexander Heinrich ,  Khalil Hosseini

发明人： Ivan Galesic ,  Joachim Mahler ,  Alexander Heinrich ,  Khalil Hosseini

IPC分类号： H01L23/495

CPC分类号： H01L23/24 ,  H01L23/3114 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An electronic component includes a metal substrate, a semiconductor chip configured to be attached to the metal substrate, and a buffer layer positioned between the metal substrate and the semiconductor chip configured to mechanically decouple the semiconductor chip and the metal substrate. The buffer layer extends across less than an entire bottom surface of the semiconductor chip.

摘要翻译： 电子部件包括金属基板，被配置为附接到金属基板的半导体芯片以及位于金属基板和半导体芯片之间的缓冲层，该缓冲层构造成使半导体芯片和金属基板机械地解耦。 缓冲层跨越半导体芯片的整个底表面延伸。

公开(公告)号：US07511382B2

公开(公告)日：2009-03-31

申请号：US11120838

申请日：2005-05-03

申请人： Edmund Riedl ,  Ralf Otremba ,  Ivan Galesic

发明人： Edmund Riedl ,  Ralf Otremba ,  Ivan Galesic

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/40

CPC分类号： H01L23/13 ,  H01L23/488 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/83191 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/3511 ,  H01L2224/8382 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor chip arrangement and method is disclosed. In one embodiment, the invention provides a method for providing a semiconductor chip arrangement including providing a semiconductor chip having a first connecting area, and providing a chip carrier having a concave shaped section formed in a second connecting area. A connecting mechanism is provided between the first connecting area and the second connecting area and pressing the semiconductor chip onto the chip carrier such that the connecting mechanism positively locks the first connecting area to the concave shaped section of the second connecting area.

摘要翻译： 公开了半导体芯片布置和方法。 在一个实施例中，本发明提供一种用于提供半导体芯片装置的方法，包括提供具有第一连接区域的半导体芯片，并且提供具有形成在第二连接区域中的凹形部分的芯片载体。 在第一连接区域和第二连接区域之间设置连接机构，并且将半导体芯片按压到芯片载体上，使得连接机构将第一连接区域正确地锁定到第二连接区域的凹形部分。

公开(公告)号：US20100099223A1

公开(公告)日：2010-04-22

申请号：US12581573

申请日：2009-10-19

申请人： Joachim Mahler ,  Thomas Behrens ,  Ivan Galesic

发明人： Joachim Mahler ,  Thomas Behrens ,  Ivan Galesic

IPC分类号： H01L21/56

CPC分类号： H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer.

摘要翻译： 集成电路器件包括在芯片上具有金属化层的半导体芯片。 气相沉积绝缘层设置在金属化层上。

公开(公告)号：US20090051016A1

公开(公告)日：2009-02-26

申请号：US11841294

申请日：2007-08-20

申请人： Ivan Galesic ,  Joachim Mahler ,  Alexander Heinrich ,  Khalil Hosseini

发明人： Ivan Galesic ,  Joachim Mahler ,  Alexander Heinrich ,  Khalil Hosseini

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L23/24 ,  H01L23/3114 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An electronic component includes a metal substrate, a semiconductor chip configured to be attached to the metal substrate, and a buffer layer positioned between the metal substrate and the semiconductor chip configured to mechanically decouple the semiconductor chip and the metal substrate. The buffer layer extends across less than an entire bottom surface of the semiconductor chip.

摘要翻译： 电子部件包括金属基板，被配置为附接到金属基板的半导体芯片以及位于金属基板和半导体芯片之间的缓冲层，该缓冲层构造成使半导体芯片和金属基板机械地解耦。 缓冲层跨越半导体芯片的整个底表面延伸。

公开(公告)号：US07874475B2

公开(公告)日：2011-01-25

申请号：US11635064

申请日：2006-12-07

申请人： Khalil Hosseini ,  Joachim Mahler ,  Edmund Riedl ,  Ivan Galesic ,  Konrad Roesl

发明人： Khalil Hosseini ,  Joachim Mahler ,  Edmund Riedl ,  Ivan Galesic ,  Konrad Roesl

IPC分类号： B23K28/00

CPC分类号： H01L24/29 ,  H01L24/27 ,  H01L24/32 ,  H01L24/743 ,  H01L24/75 ,  H01L24/83 ,  H01L25/074 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.

摘要翻译： 用于半导体器件的部件的平面接合的方法包括分别在其上侧和后侧用扩散材料涂覆部件。 随后将另一个接合的部件引入还原气氛中。 这些部件被对准并且压缩压力施加在对准的部件上。 在将还原气氛中要连接的组分加热至扩散接合温度的同时，发生等温固化，扩散接合温度低于接合材料的成形扩散接头的熔融温度。

公开(公告)号：US20070131734A1

公开(公告)日：2007-06-14

申请号：US11635064

申请日：2006-12-07

申请人： Khalil Hosseini ,  Joachim Mahler ,  Edmund Riedl ,  Ivan Galesic ,  Konrad Roesl

发明人： Khalil Hosseini ,  Joachim Mahler ,  Edmund Riedl ,  Ivan Galesic ,  Konrad Roesl

IPC分类号： A47J36/02

CPC分类号： H01L24/29 ,  H01L24/27 ,  H01L24/32 ,  H01L24/743 ,  H01L24/75 ,  H01L24/83 ,  H01L25/074 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.

摘要翻译： 用于半导体器件的部件的平面接合的方法包括分别在其上侧和后侧用扩散材料涂覆部件。 随后将另一个接合的部件引入还原气氛中。 这些部件被对准并且压缩压力施加在对准的部件上。 在将还原气氛中要连接的组分加热至扩散接合温度的同时，发生等温固化，扩散接合温度低于接合材料的成形扩散接头的熔融温度。

公开(公告)号：US20050250245A1

公开(公告)日：2005-11-10

申请号：US11120838

申请日：2005-05-03

申请人： Edmund Riedl ,  Ralf Otremba ,  Ivan Galesic

发明人： Edmund Riedl ,  Ralf Otremba ,  Ivan Galesic

IPC分类号： H01L21/44 ,  H01L21/58 ,  H01L21/60 ,  H01L21/603 ,  H01L23/12 ,  H01L23/13 ,  H01L23/488

CPC分类号： H01L23/13 ,  H01L23/488 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/83191 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/3511 ,  H01L2224/8382 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor chip arrangement and method is disclosed. In one embodiment, the invention provides a method for providing a semiconductor chip arrangement including providing a semiconductor chip having a first connecting area, and providing a chip carrier having a concave shaped section formed in a second connecting area. A connecting mechanism is provided between the first connecting area and the second connecting area and pressing the semiconductor chip onto the chip carrier such that the connecting mechanism positively locks the first connecting area to the concave shaped section of the second connecting area.

摘要翻译： 公开了半导体芯片布置和方法。 在一个实施例中，本发明提供一种用于提供半导体芯片装置的方法，包括提供具有第一连接区域的半导体芯片，并且提供具有形成在第二连接区域中的凹形部分的芯片载体。 在第一连接区域和第二连接区域之间设置连接机构，并且将半导体芯片按压到芯片载体上，使得连接机构将第一连接区域正确地锁定到第二连接区域的凹形部分。

公开(公告)号：US20130189447A1

公开(公告)日：2013-07-25

申请号：US13583755

申请日：2011-03-08

申请人： Bert Braune ,  Christina Keith ,  Ivan Galesic

发明人： Bert Braune ,  Christina Keith ,  Ivan Galesic

IPC分类号： B05D1/00

CPC分类号： B05D1/60 ,  B05D1/62 ,  B05D3/142 ,  H01L51/5253

摘要： A method of producing a parylene coating on at least one surface of at least one component includes providing a first gas containing parylene monomers and depositing the parylene monomers on the at least one surface of the component by supplying the first gas containing the parylene monomers by a first nozzle to the at least one surface, wherein the component is disposed in an environment at atmospheric pressure.

摘要翻译： 在至少一种组分的至少一个表面上生产聚对二甲苯涂层的方法包括提供含有聚对二甲苯单体的第一气体，并通过将含有聚对二甲苯单体的第一气体通过 第一喷嘴到所述至少一个表面，其中所述部件设置在大气压的环境中。

公开(公告)号：US08187964B2

公开(公告)日：2012-05-29

申请号：US12581573

申请日：2009-10-19

申请人： Joachim Mahler ,  Thomas Behrens ,  Ivan Galesic

发明人： Joachim Mahler ,  Thomas Behrens ,  Ivan Galesic

IPC分类号： H01L21/44

CPC分类号： H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer.

摘要翻译： 集成电路器件包括在芯片上具有金属化层的半导体芯片。 气相沉积绝缘层设置在金属化层上。