公开(公告)号：US08637410B2

公开(公告)日：2014-01-28

申请号：US13082968

申请日：2011-04-08

Applicant: Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

Inventor： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

IPC: H01L21/31

CPC classification number: C23C16/08 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

Abstract: Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.

Abstract translation: 提供了使用CVD和ALD技术形成和处理纯金属层的方法。 在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。 在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。 还提供了防止氢等离子体渗透金属前体层的方法。

公开(公告)号：US20130196507A1

公开(公告)日：2013-08-01

申请号：US13742596

申请日：2013-01-16

Applicant: Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

Inventor： Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

IPC: H01L21/768

CPC classification number: H01L21/76838 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76862

Abstract: Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

Abstract translation: 提供了使用CVD和ALD技术沉积金属层，更具体地TaN层的方法。 在一个或多个实施例中，该方法包括将衬底顺序地暴露于金属前体，或更具体地钽前体，接着是高频等离子体。

公开(公告)号：USD665491S1

公开(公告)日：2012-08-14

申请号：US29411713

申请日：2012-01-25

Applicant: Ashish Goel ,  Anantha K. Subramani

Designer： Ashish Goel ,  Anantha K. Subramani

公开(公告)号：US20100243440A1

公开(公告)日：2010-09-30

申请号：US12794452

申请日：2010-06-04

Applicant: Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

Inventor： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

IPC: C23C14/35

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3408

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract translation: 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

公开(公告)号：US20090308739A1

公开(公告)日：2009-12-17

申请号：US12482846

申请日：2009-06-11

Applicant: Martin Lee Riker ,  Maurice E. Ewert ,  Anantha K. Subramani

Inventor： Martin Lee Riker ,  Maurice E. Ewert ,  Anantha K. Subramani

IPC: C23C14/34

CPC classification number: H01J37/34 ,  H01J37/3447

Abstract: Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.

Abstract translation: 本文描述的实施例通常涉及用于将材料均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，提供了用于与位于溅射靶和衬底支撑座之间的屏蔽构件进行机械和电耦合的准直器。 准直器包括中心区域和周边区域，其中准直器具有穿过其中延伸的多个孔，并且位于中心区域中的孔具有比位于周边区域中的孔更高的纵横比。

公开(公告)号：US07297247B2

公开(公告)日：2007-11-20

申请号：US10431399

申请日：2003-05-06

Applicant: Anantha K. Subramani ,  Anthony Vesci ,  Scott Dickerson

Inventor： Anantha K. Subramani ,  Anthony Vesci ,  Scott Dickerson

IPC: C25D5/10 ,  C25D5/22 ,  C25D7/00

CPC classification number: C23C14/3414

Abstract: A method of fabricating a sputtering target for sputter depositing material onto a substrate in a sputtering chamber is described. In one embodiment of the method, a preform having a surface is formed and a layer of sputtering material is electroplated onto the surface of the preform to form the target. The method can be applied to form a sputtering target having a non-planar surface.

Abstract translation: 描述了一种制造溅射靶的方法，溅射靶用于溅射沉积溅射室中的衬底上的材料。 在该方法的一个实施例中，形成具有表面的预成型件，并且将溅射材料层电镀到预型件的表面上以形成靶。 该方法可以应用于形成具有非平面表面的溅射靶。

公开(公告)号：US09905443B2

公开(公告)日：2018-02-27

申请号：US13598828

申请日：2012-08-30

Applicant: Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

Inventor： Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

IPC: C23C14/54 ,  C23C16/48 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67115 ,  C23C14/541 ,  C23C16/481 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68742

Abstract: Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.

公开(公告)号：US08685215B2

公开(公告)日：2014-04-01

申请号：US12794452

申请日：2010-06-04

Applicant: Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

Inventor： Keith A. Miller ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Tza-Jing Gung ,  Hong S. Yang ,  Vincent E. Burkhart

IPC: C23C14/35

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3408

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract translation: 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

公开(公告)号：US20120258602A1

公开(公告)日：2012-10-11

申请号：US13082968

申请日：2011-04-08

Applicant: Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

Inventor： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

IPC: H01L21/31

CPC classification number: C23C16/08 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

Abstract: Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.

Abstract translation: 提供了使用CVD和ALD技术形成和处理纯金属层的方法。 在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。 在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。 还提供了防止氢等离子体渗透金属前体层的方法。

公开(公告)号：US07018515B2

公开(公告)日：2006-03-28

申请号：US10949735

申请日：2004-09-23

Applicant: Tza-Jing Gung ,  Hong S. Yang ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Keith A. Miller ,  Vincent E. Burkhart

Inventor： Tza-Jing Gung ,  Hong S. Yang ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Keith A. Miller ,  Vincent E. Burkhart

IPC: C23C14/35

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3408

Abstract: A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

Abstract translation: 一种双位磁控管，其围绕溅射靶的背面的中心轴旋转，特别是用于将阻挡材料的靶的边缘溅射到晶片上，并且清理物质再沉积在靶的中心。 在目标清洁期间，晶片偏置减小。 在一个实施例中，弧形磁控管被支撑在枢转臂上，枢转臂在固定到旋转轴的支架的端部上枢转。 弹簧偏压枢转臂，使得磁控管被推向目标中心并覆盖在目标中心上方。 提高旋转速度的离心力克服了弹簧偏压，并将磁控管移动到外部位置，长磁导管尺寸与目标边缘对齐。 机械停止可防止任何方向上的过度运动。 其他机构包括线性滑块和致动器。