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    BLOCK COPOLYMER-ASSISTED NANOLITHOGRAPHY
    2.
    发明申请
    BLOCK COPOLYMER-ASSISTED NANOLITHOGRAPHY 审中-公开
    嵌段共聚物辅助纳米尺度

    公开(公告)号：US20110165341A1

    公开(公告)日：2011-07-07

    申请号：US12959105

    申请日：2010-12-02

    Applicant: Chad A. Mirkin ,  Jinan Chai ,  Fengwei Huo ,  Zijian Zheng ,  Louise R. Giam

    Inventor： Chad A. Mirkin ,  Jinan Chai ,  Fengwei Huo ,  Zijian Zheng ,  Louise R. Giam

    IPC: B05D5/00 ,  B05D1/28 ,  B05D3/10 ,  B82Y40/00 ,  B82Y99/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    Abstract: In accordance with an embodiment of the disclosure, a method for forming submicron size nanostructures on a substrate surface includes contacting a substrate with a tip coated with an ink comprising a block copolymer matrix and a nanostructure precursor to form a printed feature comprising the block copolymer matrix and the nanostructure precursor on the substrate, and reducing the nanostructure precursor of the printed feature to form a nanostructure having a diameter (or line width) of less than 1 μm.

    Abstract translation: 根据本公开的实施例，用于在衬底表面上形成亚微米级纳米结构的方法包括使基底与涂覆有包含嵌段共聚物基质和纳米结构前体的油墨的末端接触，以形成包含嵌段共聚物基质 和纳米结构前体，并且还原印刷特征的纳米结构前体以形成直径（或线宽）小于1μm的纳米结构。

    Generation of Combinatorial Patterns by Deliberate Tilting of a Polymer-Pen Array
    3.
    发明申请
    Generation of Combinatorial Patterns by Deliberate Tilting of a Polymer-Pen Array 有权
    通过有意图倾斜聚合物笔阵列来产生组合模式

    公开(公告)号：US20130040856A1

    公开(公告)日：2013-02-14

    申请号：US13513618

    申请日：2010-12-02

    Applicant: Chad A. Mirkin ,  Adam B. Braunschweig ,  Jinan Chai ,  Dan J. Eichelsdoerfer ,  Louise R. Giam ,  Xing Liao ,  Lu Shin Wong

    Inventor： Chad A. Mirkin ,  Adam B. Braunschweig ,  Jinan Chai ,  Dan J. Eichelsdoerfer ,  Louise R. Giam ,  Xing Liao ,  Lu Shin Wong

    IPC: C40B50/14 ,  C40B50/18 ,  C40B40/18 ,  C40B40/04 ,  C40B30/08 ,  C40B40/00 ,  B82Y5/00

    CPC classification number: G03F7/0002 ,  B01J2219/00387 ,  B82Y10/00 ,  B82Y40/00

    Abstract: The disclosure relates to a method of forming a pattern having pattern elements with a plurality of sizes on a substrate surface with a tilted pen array that includes choosing a tilt geometry for a pen array with respect to a substrate, inducing the tilt geometry between the pen array and the substrate surface, and forming a pattern having pattern elements on the substrate surface with the titled pen array, whereby the size of the formed pattern elements varies across the substrate surface along the tilted axis or axes. For example, the tilt geometry is in reference to the substrate surface and comprises a first angle with respect to a first axis of the substrate and a second angle with respect to a second axis of the substrate, the second axis being perpendicular to the first axis, and at least one of the first and second angles being non-zero.

    Abstract translation: 本公开涉及一种在衬底表面上形成具有多个尺寸的图案元件的图案的方法，该倾斜笔阵列包括相对于衬底选择笔阵列的倾斜几何形状，从而引起笔之间的倾斜几何形状 阵列和衬底表面，并且用标称笔阵列在衬底表面上形成具有图形元素的图案，由此形成的图案元素的尺寸沿着倾斜的轴线或轴线跨越衬底表面变化。 例如，倾斜几何形状参考衬底表面并且包括相对于衬底的第一轴线的第一角度和相对于衬底的第二轴线的第二角度，第二轴线垂直于第一轴线 并且第一和第二角度中的至少一个是非零。

    METHOD OF NANOSCALE PATTERNING USING BLOCK COPOLYMER PHASE SEPARATED NANOSTRUCTURE TEMPLATES
    5.
    发明申请
    METHOD OF NANOSCALE PATTERNING USING BLOCK COPOLYMER PHASE SEPARATED NANOSTRUCTURE TEMPLATES 审中-公开
    使用嵌段共聚物相分离纳米结构模板的纳米结构方法

    公开(公告)号：US20100059475A1

    公开(公告)日：2010-03-11

    申请号：US12465617

    申请日：2009-05-13

    Applicant: Chad A. Mirkin ,  Jinan Chai

    Inventor： Chad A. Mirkin ,  Jinan Chai

    IPC: C23F1/00 ,  B05D1/32

    CPC classification number: G03F7/0002 ,  G01Q20/04 ,  G01Q40/00 ,  G01Q70/10 ,  G01Q70/16 ,  G01Q80/00

    Abstract: A method of forming nanostructures using block copolymer nanostructure templates is disclosed herein. The method includes forming a nanostructure template by patterning a block copolymer on a substrate and allowing the block copolymer to phase separate to form the nanostructure template. The nanostructure template can then be loaded with a nanostructure precursor material. The nanostructure template is removed to form the nanostructure.

    Abstract translation: 本文公开了使用嵌段共聚物纳米结构模板形成纳米结构的方法。 该方法包括通过在基底上构图嵌段共聚物并使嵌段共聚物相分离以形成纳米结构模板来形成纳米结构模板。 然后可以用纳米结构前体材料负载纳米结构模板。 去除纳米结构模板以形成纳米结构。

    Generation of combinatorial patterns by deliberate tilting of a polymer-pen array
    6.
    发明授权
    Generation of combinatorial patterns by deliberate tilting of a polymer-pen array 有权
    通过聚合物笔阵列的有意倾斜来产生组合图案

    公开(公告)号：US08753813B2

    公开(公告)日：2014-06-17

    申请号：US13513618

    申请日：2010-12-02

    Applicant: Chad A. Mirkin ,  Adam B. Braunschweig ,  Jinan Chai ,  Dan J. Eichelsdoerfer ,  Louise R. Giam ,  Xing Liao ,  Lu Shin Wong

    Inventor： Chad A. Mirkin ,  Adam B. Braunschweig ,  Jinan Chai ,  Dan J. Eichelsdoerfer ,  Louise R. Giam ,  Xing Liao ,  Lu Shin Wong

    IPC: C12Q1/68 ,  C12M1/00 ,  C12M1/34 ,  C12M3/00 ,  B05D3/00

    CPC classification number: G03F7/0002 ,  B01J2219/00387 ,  B82Y10/00 ,  B82Y40/00

    Abstract: The disclosure relates to a method of forming a pattern having pattern elements with a plurality of sizes on a substrate surface with a tilted pen array that includes choosing a tilt geometry for a pen array with respect to a substrate, inducing the tilt geometry between the pen array and the substrate surface, and forming a pattern having pattern elements on the substrate surface with the titled pen array, whereby the size of the formed pattern elements varies across the substrate surface along the tilted axis or axes. For example, the tilt geometry is in reference to the substrate surface and comprises a first angle with respect to a first axis of the substrate and a second angle with respect to a second axis of the substrate, the second axis being perpendicular to the first axis, and at least one of the first and second angles being non-zero.

    Abstract translation: 本公开涉及一种在衬底表面上形成具有多个尺寸的图案元件的图案的方法，该倾斜笔阵列包括相对于衬底选择笔阵列的倾斜几何形状，从而引起笔之间的倾斜几何形状 阵列和衬底表面，并且用标称笔阵列在衬底表面上形成具有图形元素的图案，由此形成的图案元素的尺寸沿着倾斜的轴线或轴线跨越衬底表面变化。 例如，倾斜几何形状参考衬底表面并且包括相对于衬底的第一轴线的第一角度和相对于衬底的第二轴线的第二角度，第二轴线垂直于第一轴线 并且第一和第二角度中的至少一个是非零。

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