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    COMBINATORIAL RF BIAS METHOD FOR PVD
    2.
    发明申请
    COMBINATORIAL RF BIAS METHOD FOR PVD 有权
    PVD的组合RF偏置方法

    公开(公告)号：US20130149469A1

    公开(公告)日：2013-06-13

    申请号：US13316882

    申请日：2011-12-12

    申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23C16/04

    CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

    摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

    摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽还可以通过低通滤波器连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

    Combinatorial RF bias method for PVD
    3.
    发明授权
    Combinatorial RF bias method for PVD 有权
    PVD的组合RF偏置方法

    公开(公告)号：US08974649B2

    公开(公告)日：2015-03-10

    申请号：US13316882

    申请日：2011-12-12

    申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

    CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

    摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

    摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽可以通过低通滤波器进一步连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

    Substrate Processing Tool with Tunable Fluid Flow
    4.
    发明申请
    Substrate Processing Tool with Tunable Fluid Flow 审中-公开
    具有可调流体流动的基板加工工具

    公开(公告)号：US20130153149A1

    公开(公告)日：2013-06-20

    申请号：US13331011

    申请日：2011-12-20

    申请人： Danny Wang ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： Danny Wang ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23F1/08 ,  F17D3/00 ,  C23C16/458

    CPC分类号： C23C16/4585 ,  H01L21/6719 ,  H01L21/68735 ,  Y10T137/0318

    摘要： Embodiments provided herein describe substrate processing tools. The substrate processing tools include a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. The substrate has a central axis. A first annular member is moveably coupled to the housing and positioned within the processing chamber. The first annular member circumscribes the central axis of the substrate. A second annular member is moveably coupled to the housing and positioned within the processing chamber. The second annular member circumscribes the central axis of the substrate. Movement of the first annular member and the second annular member relative to the housing changes a flow of processing fluid through the processing chamber.

    摘要翻译： 本文提供的实施例描述了衬底处理工具。 衬底处理工具包括限定处理室的壳体。 衬底支撑件联接到壳体并且构造成支撑处理室内的衬底。 基板具有中心轴。 第一环形构件可移动地联接到壳体并且定位在处理室内。 第一环形构件围绕衬底的中心轴线。 第二环形构件可移动地联接到壳体并且定位在处理室内。 第二环形构件围绕基板的中心轴线。 第一环形构件和第二环形构件相对于壳体的移动改变处理流体通过处理室的流动。

    Method and system for mask handling in high productivity chamber
    5.
    发明授权
    Method and system for mask handling in high productivity chamber 有权
    高生产率室中面罩处理方法和系统

    公开(公告)号：US08317925B2

    公开(公告)日：2012-11-27

    申请号：US13169257

    申请日：2011-06-27

    申请人： Rick Endo ,  Kurt Weiner ,  James Tsung

    发明人： Rick Endo ,  Kurt Weiner ,  James Tsung

    IPC分类号： C23C16/458 ,  C23C16/00

    CPC分类号： H01L21/67225 ,  C23C16/042 ,  H01L21/6719 ,  H01L21/68742 ,  Y10S206/832

    摘要： A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extensions for the mask enable independent movement of the wafer and the mask. In one embodiment, the extensions are affixed to an annular ring which is capable of moving in a vertical direction within the processing chamber. A processing chamber, a mask, and a method for combinatorially processing a substrate are also provided.

    摘要翻译： 提供了用于在处理室中独立地支撑晶片和掩模的结构。 该结构包括一组用于支撑晶片的延伸部和一组支撑该掩模的延伸部。 用于晶片的一组扩展和用于掩模的一组扩展使得能够独立地移动晶片和掩模。 在一个实施例中，延伸部固定到能够在处理室内沿垂直方向移动的环形环。 还提供了处理室，掩模和用于组合处理衬底的方法。

    Method and system for mask handling in high productivity chamber
    8.
    发明授权
    Method and system for mask handling in high productivity chamber 有权
    高生产率室中面罩处理方法和系统

    公开(公告)号：US07993461B2

    公开(公告)日：2011-08-09

    申请号：US11754999

    申请日：2007-05-30

    申请人： Rick Endo ,  Kurt Weiner ,  James Tsung

    发明人： Rick Endo ,  Kurt Weiner ,  James Tsung

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67225 ,  C23C16/042 ,  H01L21/6719 ,  H01L21/68742 ,  Y10S206/832

    摘要： A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extensions for the mask enable independent movement of the wafer and the mask. In one embodiment, the extensions are affixed to an annular ring which is capable of moving in a vertical direction within the processing chamber. A processing chamber, a mask, and a method for combinatorially processing a substrate are also provided.

    摘要翻译： 提供了用于在处理室中独立地支撑晶片和掩模的结构。 该结构包括一组用于支撑晶片的延伸部和一组支撑该掩模的延伸部。 用于晶片的一组扩展和用于掩模的一组扩展使得能够独立地移动晶片和掩模。 在一个实施例中，延伸部固定到能够在处理室内沿垂直方向移动的环形环。 还提供了处理室，掩模和用于组合处理衬底的方法。

    Design of hardware features to facilitate arc-spray coating applications and functions
    10.
    发明授权
    Design of hardware features to facilitate arc-spray coating applications and functions 有权
    设计硬件功能，方便电弧喷涂应用和功能

    公开(公告)号：US06797131B2

    公开(公告)日：2004-09-28

    申请号：US10293641

    申请日：2002-11-12

    申请人： Alan Barry Liu ,  Chien-Shiung Tzou ,  James Tsung

    发明人： Alan Barry Liu ,  Chien-Shiung Tzou ,  James Tsung

    IPC分类号： C23C1434

    CPC分类号： C23C14/564 ,  C23C4/00 ,  C23C4/01 ,  C23C4/02 ,  C23C14/50

    摘要： A method and apparatus for forming a coating on a sputter chamber workpiece. The apparatus generally includes a sputter chamber having at least one workpiece. The at least one workpiece generally includes one or more trenches formed therein, the trenches being configured to define an arc spray coating region. The method generally includes forming one or more trenches in the workpiece, the trenches defining a coating region and applying a metal coating to the coating region by arc spraying.

    摘要翻译： 一种用于在溅射室工件上形成涂层的方法和装置。 该设备通常包括具有至少一个工件的溅射室。 所述至少一个工件通常包括形成在其中的一个或多个沟槽，所述沟槽构造成限定电弧喷涂层区域。 该方法通常包括在工件中形成一个或多个沟槽，沟槽限定涂覆区域，并通过电弧喷涂将金属涂层施加到涂覆区域。