公开(公告)号：US20060249713A1

公开(公告)日：2006-11-09

申请号：US11484049

申请日：2006-07-11

申请人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Thomas Deis ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Thomas Deis ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01B1/12

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

公开(公告)号：US20050116346A1

公开(公告)日：2005-06-02

申请号：US10964499

申请日：2004-10-13

申请人： John Kirner ,  James MacDougall ,  Brian Peterson ,  Scott Weigel ,  Thomas Deis ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： John Kirner ,  James MacDougall ,  Brian Peterson ,  Scott Weigel ,  Thomas Deis ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01L21/768 ,  C01B33/16 ,  H01B3/12 ,  H01B3/46 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  B32B9/04

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249979

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 这些材料的特征在于具有约3.7或更小的介电常数（kappa）的介电常数; 来自材料的介电常数的部分归一化的壁弹性模量（E 0）为约15GPa或更大; 金属杂质含量为约500ppm以下。 还公开了低介电常数材料，其介电常数小于约1.95，并且部分源于材料的介电常数导出的归一化的壁弹性模量（E 0）大于约26 GPa。

公开(公告)号：US20050181633A1

公开(公告)日：2005-08-18

申请号：US10780183

申请日：2004-02-17

申请人： Arthur Hochberg ,  Kirk Cuthill ,  Thomas Deis ,  Lisa Deis ,  Andre Lagendijk

发明人： Arthur Hochberg ,  Kirk Cuthill ,  Thomas Deis ,  Lisa Deis ,  Andre Lagendijk

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/48 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/469

CPC分类号： H01L21/02205 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  H01L21/02123 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185

摘要： Inorganic precursors, namely iodosilane precursors, for the low temperature, low pressure deposition of silicon-containing films is provided therein. In one aspect, there is provided a process for forming a silicon-containing film process comprising: introducing a substrate and gaseous reagents comprising an iodosilane precursor having three or less iodine atoms bound to the silicon atom and at least one reagent selected from an oxygen-containing reactive gas, a nitrogen-containing reactive gas, a hydrogen-containing reactive gas and mixtures thereof into a reaction chamber; heating the reaction chamber to one or more temperatures ranging from 200° C. to 900° C. to form the silicon containing film on the substrate, provided that if the iodosilane precursor has three iodine atoms bound to the silicon atom then the heating step is conducted at one or more pressures less than 600 Torr.

摘要翻译： 在其中提供了用于低温，低压沉积含硅膜的无机前体，即碘代硅烷前体。 一方面，提供一种形成含硅膜工艺的方法，包括：引入底物和包含具有三个或更少碘原子的碘代硅烷前体与气体原子结合的气态试剂和至少一种选自氧 - 含有反应气体，含氮反应气体，含氢反应性气体及其混合物; 将反应室加热至200℃至900℃的一个或多个温度，以在基板上形成含硅膜，条件是如果碘代硅烷前体具有三个与硅原子结合的碘原子，则加热步骤为 在一个或多个低于600乇的压力下进行。