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公开(公告)号：US20060249818A1
公开(公告)日：2006-11-09
申请号：US11484075
申请日：2006-07-11
申请人： Brian Peterson , John Kirner , Scott Weigel , James MacDougall , Lisa Deis , Thomas Braymer , Keith Campbell , Martin Devenney , C. Ramberg , Konstantinos Chondroudis , Keith Cendak
发明人： Brian Peterson , John Kirner , Scott Weigel , James MacDougall , Lisa Deis , Thomas Braymer , Keith Campbell , Martin Devenney , C. Ramberg , Konstantinos Chondroudis , Keith Cendak
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
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公开(公告)号：US20060249713A1
公开(公告)日：2006-11-09
申请号：US11484049
申请日：2006-07-11
申请人： Brian Peterson , John Kirner , Scott Weigel , James MacDougall , Thomas Deis , Lisa Deis , Thomas Braymer , Keith Campbell , Martin Devenney , C. Ramberg , Konstantinos Chondroudis , Keith Cendak
发明人： Brian Peterson , John Kirner , Scott Weigel , James MacDougall , Thomas Deis , Lisa Deis , Thomas Braymer , Keith Campbell , Martin Devenney , C. Ramberg , Konstantinos Chondroudis , Keith Cendak
IPC分类号： H01B1/12
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
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公开(公告)号：US20050116346A1
公开(公告)日：2005-06-02
申请号：US10964499
申请日：2004-10-13
申请人： John Kirner , James MacDougall , Brian Peterson , Scott Weigel , Thomas Deis , Martin Devenney , C. Ramberg , Konstantinos Chondroudis , Keith Cendak
发明人： John Kirner , James MacDougall , Brian Peterson , Scott Weigel , Thomas Deis , Martin Devenney , C. Ramberg , Konstantinos Chondroudis , Keith Cendak
IPC分类号： H01L21/768 , C01B33/16 , H01B3/12 , H01B3/46 , H01L21/312 , H01L21/316 , H01L23/522 , B32B9/04
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/31695 , Y10T428/249967 , Y10T428/249969 , Y10T428/249979
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.
摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 这些材料的特征在于具有约3.7或更小的介电常数（kappa）的介电常数; 来自材料的介电常数的部分归一化的壁弹性模量（E
0）为约15GPa或更大; 金属杂质含量为约500ppm以下。 还公开了低介电常数材料，其介电常数小于约1.95，并且部分源于材料的介电常数导出的归一化的壁弹性模量（E 0）大于约26 GPa。 -
公开(公告)号：US07122880B2
公开(公告)日：2006-10-17
申请号：US10638942
申请日：2003-05-20
申请人： Brian Keith Peterson , John Francis Kirner , Scott Jeffrey Weigel , James Edward MacDougall , Lisa Deis , Thomas Albert Braymer , Keith Douglas Campbell , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
发明人： Brian Keith Peterson , John Francis Kirner , Scott Jeffrey Weigel , James Edward MacDougall , Lisa Deis , Thomas Albert Braymer , Keith Douglas Campbell , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
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公开(公告)号：US07482676B2
公开(公告)日：2009-01-27
申请号：US11484075
申请日：2006-07-11
申请人： Brian Keith Peterson , John Francis Kirner , Scott Jeffrey Weigel , James Edward MacDougall , Lisa Deis , Thomas Albert Braymer , Keith Douglas Campbell , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
发明人： Brian Keith Peterson , John Francis Kirner , Scott Jeffrey Weigel , James Edward MacDougall , Lisa Deis , Thomas Albert Braymer , Keith Douglas Campbell , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
摘要翻译： 当用作性能材料时，例如在层间电介质集成电路中使用低电介质材料和包含它们的薄膜以及用于制造它们的方法可以提高性能。 在本发明的一个方面，可以通过控制至少一种致孔剂中的环氧乙烷基团的重量百分数来提高介电材料的性能。
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公开(公告)号：US20070054802A1
公开(公告)日：2007-03-08
申请号：US10557911
申请日：2004-05-19
申请人： Daniel Giaquinta , Alexander Gorer , Martin Devenney , Ting He , Hiroyuki Oyanagi , Peter Strasser , Qun Fan , Konstantinos Chondroudis , Keith Cendak
发明人： Daniel Giaquinta , Alexander Gorer , Martin Devenney , Ting He , Hiroyuki Oyanagi , Peter Strasser , Qun Fan , Konstantinos Chondroudis , Keith Cendak
CPC分类号： C22C30/00 , B01J23/898 , C22C5/04 , C22C27/025 , C23C14/352 , C23C14/548 , H01M4/881 , H01M4/921 , H01M4/926 , H01M8/1007 , H01M8/1011 , H01M2008/1095 , Y02E60/523
摘要： A fuel cell electrocatalyst that contains platinum, vanadium, and iron. In one embodiment, the fuel cell electrocatalyst has a concentration of platinum that is less than 50 atomic percent. In another embodiment, the fuel cell electrocatalyst has a concentration of vanadium that is greater than 25 atomic percent.
摘要翻译： 含有铂，钒和铁的燃料电池电催化剂。 在一个实施方案中，燃料电池电催化剂的铂浓度小于50原子％。 在另一个实施方案中，燃料电池电催化剂具有大于25原子百分比的钒浓度。
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公开(公告)号：US20070037039A1
公开(公告)日：2007-02-15
申请号：US11314262
申请日：2005-12-21
申请人： Konstantinos Chondroudis , Alexander Gorer , Peter Strasser , Martin Devenney , Qun Fan , Daniel Giaquinta , Keith Cendak , Hiroyuki Oyanagi , Kenta Urata
发明人： Konstantinos Chondroudis , Alexander Gorer , Peter Strasser , Martin Devenney , Qun Fan , Daniel Giaquinta , Keith Cendak , Hiroyuki Oyanagi , Kenta Urata
CPC分类号： H01M4/92 , B01J23/8993 , H01M4/90 , H01M4/9016 , H01M4/9083 , H01M4/923 , H01M4/926
摘要： A composition for use as a catalyst in, for example, a fuel cell, the composition comprising platinum, copper and tungsten, or an oxide, carbide and/or salt of one or more of platinum, copper and tungsten, wherein the sum of the concentrations of platinum, copper and tungsten, or an oxide, carbide and/or salt thereof, is greater than 90 atomic percent.
摘要翻译： 用作例如燃料电池中的催化剂的组合物，所述组合物包含铂，铜和钨，或铂，铜和钨中的一种或多种的氧化物，碳化物和/或盐，其中， 铂，铜和钨或其氧化物，碳化物和/或其盐的浓度大于90原子％。
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公开(公告)号：US07186613B2
公开(公告)日：2007-03-06
申请号：US10964499
申请日：2004-10-13
申请人： John Francis Kirner , James Edward MacDougall , Brian Keith Peterson , Scott Jeffrey Weigel , Thomas Alan Deis , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
发明人： John Francis Kirner , James Edward MacDougall , Brian Keith Peterson , Scott Jeffrey Weigel , Thomas Alan Deis , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
IPC分类号： H01L21/8242 , H01L29/94
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/31695 , Y10T428/249967 , Y10T428/249969 , Y10T428/249979
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.
摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 这些材料的特征在于具有约3.7或更小的介电常数（kappa）的介电常数; 来自材料的介电常数的部分归一化的壁弹性模量（E
0）为约15GPa或更大; 金属杂质含量为约500ppm以下。 还公开了低介电常数材料，其介电常数小于约1.95，并且部分源于材料的介电常数导出的归一化的壁弹性模量（E 0）大于约26 GPa。 -
公开(公告)号：US20060058185A1
公开(公告)日：2006-03-16
申请号：US11205557
申请日：2005-08-17
申请人： Keith Cendak , Alexander Gorer , Peter Strasser , Martin Devenney , Qun Fan , Konstantinos Chondroudis , Daniel Giaquinta , Kenta Urata , Hiroyuki Oyanagi
发明人： Keith Cendak , Alexander Gorer , Peter Strasser , Martin Devenney , Qun Fan , Konstantinos Chondroudis , Daniel Giaquinta , Kenta Urata , Hiroyuki Oyanagi
IPC分类号： C22C5/04
CPC分类号： C22C5/04 , B01J19/0046 , B01J23/8926 , B01J37/34 , B01J2219/0043 , B01J2219/00432 , B01J2219/00653 , B01J2219/00659 , B01J2219/00695 , B01J2219/00702 , B01J2219/00747 , C22C9/00 , C22C9/06 , C22C30/00 , C40B30/08 , C40B40/18 , C40B50/18 , H01M4/921 , H01M4/925
摘要： A composition for use as a catalyst in, for example, a fuel cell, the composition comprising platinum, copper, and nickel, wherein the concentration of platinum therein is greater than 50 atomic percent and less than 80 atomic percent, and further wherein the sum of the concentrations of platinum, copper and nickel is greater than 95 atomic percent.
摘要翻译： 用作例如燃料电池中的催化剂的组合物，所述组合物包含铂，铜和镍，其中铂的浓度大于50原子％且小于80原子％，此外，其中总和 的铂，铜和镍的浓度大于95原子％。
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公开(公告)号：US07307343B2
公开(公告)日：2007-12-11
申请号：US10158511
申请日：2002-05-30
申请人： John Francis Kirner , James Edward MacDougall , Brian Keith Peterson , Scott Jeffrey Weigel , Thomas Alan Deis , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
发明人： John Francis Kirner , James Edward MacDougall , Brian Keith Peterson , Scott Jeffrey Weigel , Thomas Alan Deis , Martin Devenney , C. Eric Ramberg , Konstantinos Chondroudis , Keith Cendak
IPC分类号： H01L23/48
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/31695 , Y10T428/249967 , Y10T428/249969 , Y10T428/249979
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.
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