公开(公告)号：US20080102203A1

公开(公告)日：2008-05-01

申请号：US11923590

申请日：2007-10-24

Applicant: Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

Inventor： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

IPC: C23C16/44

CPC classification number: C23C16/4404 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel at a central portion of the chamber lid assembly, wherein an upper portion of the expanding channel extends substantially parallel along a central axis of the expanding channel, and an expanding portion of the expanding channel tapers away from the central axis. The chamber lid assembly further contains a conduit coupled to a gas inlet, another conduit coupled to another gas inlet, and both gas inlets are positioned to provide a circular gas flow through the expanding channel. In one example, the inner surface within the upper portion of the expanding channel has a lower mean surface roughness than the inner surface within the expanding portion of the expanding channel.

Abstract translation: 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的腔室，其包括在室盖组件的中心部分处包含扩张通道的腔室盖组件，其中，扩张通道的上部沿着扩张通道的中心轴线大致平行延伸 并且扩张槽的膨胀部分从中心轴线逐渐变细。 腔室盖组件还包括连接到气体入口的导管，另一导管与另一个气体入口连接，两个气体入口被定位成提供通过扩张通道的圆形气流。 在一个示例中，扩展通道的上部内的内表面的平均表面粗糙度低于膨胀通道的膨胀部分内的内表面。

公开(公告)号：US20140342555A1

公开(公告)日：2014-11-20

申请号：US13897327

申请日：2013-05-17

Applicant: Hyman Lam ,  Nicholas R. Denny ,  Joseph AuBuchon ,  Mei Chang

Inventor： Hyman Lam ,  Nicholas R. Denny ,  Joseph AuBuchon ,  Mei Chang

IPC: H01L21/321 ,  H01L21/3205 ,  C23C16/48

CPC classification number: H01L21/32051 ,  C23C16/482 ,  H01L21/67115 ,  H01L21/76862

Abstract: Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.

Abstract translation: 描述了用于处理半导体晶片的装置和方法，使得膜可以沉积在晶片上，并且膜可以被UV处理，而不需要将晶片移动到单独的处理位置。 该装置和方法包括通过惰性气体流与活性气体隔离的窗口。

公开(公告)号：US20080107809A1

公开(公告)日：2008-05-08

申请号：US11923589

申请日：2007-10-24

Applicant: Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

Inventor： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

IPC: C23C16/455

CPC classification number: C23C16/4404 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.

Abstract translation: 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的腔室，其包括腔室盖组件，该室盖组件包含沿腔室盖组件的中心部分处的中心轴线延伸的扩张通道，以及从膨胀通道延伸到周边部分的锥形底面 室盖组件。 锥形底表面的形状和尺寸可以基本上覆盖基板接收表面。 腔室盖组件还包括连接到气体通道的导管，另一导管与另一个气体通道连接，两个气体通道绕过扩张通道。 每个通道具有延伸到扩张通道中的多个入口，并且入口被定位成提供通过膨胀通道的圆形气流。

公开(公告)号：US20070207318A1

公开(公告)日：2007-09-06

申请号：US11632688

申请日：2005-07-20

Applicant: Sungho Jin ,  Li-Han Chen ,  Joseph AuBuchon

Inventor： Sungho Jin ,  Li-Han Chen ,  Joseph AuBuchon

IPC: H05H1/24 ,  B32B9/00

CPC classification number: B82Y40/00 ,  B81B2203/0361 ,  B81C1/00103 ,  B82B3/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10T428/30

Abstract: Elongated nanostructures and a method of fabricating elongated nanostructures with one or more sharp A bends using a plasma enhanced chemical vapor deposition process comprising placing an anode above the nanostructure and a cathode below the nanostructure, applying a voltage between the anode and cathode to create electric field lines, and changing the direction of the electric field lines during the fabrication of the nanostructure. Device applications using such structures are also disclosed.

Abstract translation: 伸长的纳米结构和使用等离子体增强化学气相沉积工艺制造具有一个或多个尖锐A弯曲的细长纳米结构的方法，包括将纳米结构上方的阳极和纳米结构下方的阴极放置在阳极和阴极之间施加电压以产生电场 线，并且在纳米结构的制造期间改变电场线的方向。 还公开了使用这种结构的装置应用。

公开(公告)号：US20080102208A1

公开(公告)日：2008-05-01

申请号：US11923583

申请日：2007-10-24

Applicant: Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

Inventor： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

IPC: C23C16/455 ,  C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/4404 ,  C23C16/45502 ,  C23C16/45563

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.

Abstract translation: 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的室，其包括容纳中心定位的气体分散通道的室盖组件，其中气体分散通道的会聚部分朝向气体分散通道的中心轴逐渐变细， 气体分散通道远离中心轴逐渐变细。 室盖组件还包括从气体分散通道的发散部分延伸到室盖组件的周边部分的锥形底表面，其中锥形底表面的形状和尺寸基本上覆盖衬底，并且两个管道耦合到 在气体分散通道的会聚部分内的气体入口并且定位成提供通过气体分散通道的圆形气体流。