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    Fault tolerant laser diode package
    1.
    发明授权
    Fault tolerant laser diode package 有权
    容错激光二极管封装

    公开(公告)号：US07330491B2

    公开(公告)日：2008-02-12

    申请号：US10827981

    申请日：2004-04-20

    申请人： Edward F. Stephens, IV ,  Joseph L. Levy ,  John S. Whiteley

    发明人： Edward F. Stephens, IV ,  Joseph L. Levy ,  John S. Whiteley

    IPC分类号： H01S3/04

    CPC分类号： H01S5/02272 ,  H01S5/02476 ,  H01S5/06825 ,  H01S5/4018 ,  H01S5/4031 ,  H01S5/405

    摘要： A laser diode package (10) according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package (10) includes a laser diode bar (12), a forward-biased diode (14), a heat sink (18), and a lid (16) which may have fusible links (86). The laser diode bar (12) and the forward-biased diode (14) are electrically connected in parallel between the heat sink (18) and the lid (16). The emitting region of the laser diode bar (12) is aligned to emit radiation away from the forward-biased diode (14). Several packages can be stacked together to form a laser diode array (42). The forward-biased diode (14) allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar (12), thus preventing an open-circuit failure from completely disabling the array (42). The fusible links (86), if used on the lid (16), prevent damaged active regions (90) in a laser diode bar (12) from short-circuiting and drawing more electrical current than the other active regions (90).

    摘要翻译： 根据本发明的激光二极管封装（10）容忍短路和开路故障。 激光二极管封装（10）包括激光二极管条（12），正向偏置二极管（14），散热器（18）和可能具有易熔链（86）的盖子（16）。 激光二极管条（12）和正向偏置二极管（14）在散热器（18）和盖（16）之间并联电连接。 对准激光二极管条（12）的发射区域以发射远离正向偏置二极管（14）的辐射。 可以将多个封装堆叠在一起以形成激光二极管阵列（42）。 当相应的激光二极管条（12）中发生开路故障时，正向偏置二极管（14）允许电流通过它，从而防止开路故障完全禁用阵列（42）。 如果在盖子（16）上使用可熔连接件（86），则防止激光二极管条（12）中损坏的有源区域（90）与其它有源区域（90）相比短路并吸引更多的电流。

    Fault tolerant laser diode package
    2.
    发明授权
    Fault tolerant laser diode package 有权

    公开(公告)号：US06728275B2

    公开(公告)日：2004-04-27

    申请号：US10246972

    申请日：2002-09-19

    申请人： Edward F. Stephens, IV ,  Joseph L. Levy ,  John S. Whiteley

    发明人： Edward F. Stephens, IV ,  Joseph L. Levy ,  John S. Whiteley

    IPC分类号： H01S304

    CPC分类号： H01S5/02272 ,  H01S5/02476 ,  H01S5/06825 ,  H01S5/4018 ,  H01S5/4031 ,  H01S5/405

    摘要： A laser diode package (10) according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package (10) includes a laser diode bar (12), a forward-biased diode (14), a heat sink (18), and a lid (16) which may have fusible links (86). The laser diode bar (12) and the forward-biased diode (14) are electrically connected in parallel between the heat sink (18) and the lid (16). The emitting region of the laser diode bar (12) is aligned to emit radiation away from the forward-biased diode (14). Several packages can be stacked together to form a laser diode array (42). The forward-biased diode (14) allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar (12), thus preventing an open-circuit failure from completely disabling the array (42). The fusible links (86), if used on the lid (16), prevent damaged active regions (90) in a laser diode bar (12) from short-circuiting and drawing more electrical current than the other active regions (90).

    Single mode cavity laser
    3.
    发明授权
    Single mode cavity laser 失效
    单模腔激光器

    公开(公告)号：US4426707A

    公开(公告)日：1984-01-17

    申请号：US319196

    申请日：1981-11-09

    申请人： Danny W. Martin ,  Joseph L. Levy

    发明人： Danny W. Martin ,  Joseph L. Levy

    IPC分类号： H01S5/14 ,  H01S3/08

    CPC分类号： H01S5/14

    摘要： This external cavity laser utilizes an unstable resonator in conjunction with a high reflectivity stripe end mirror which is oriented substantially parallel to the plane of the maximum divergence of the laser diode output beam and whose axis is substantially parallel to the plane of the junction of the laser diode. This configuration operates with high efficiency to select only the fundamental mode of the laser diode with a minimal divergence in the output beam.

    摘要翻译： 该外腔激光器使用不稳定谐振器与高反射率条形端镜反射镜，该反射率条形反射镜基本上平行于激光二极管输出光束的最大发散平面定向，并且其轴线基本上平行于激光器的结的平面 二极管。 该配置以高效率工作，仅选择输出光束中最小发散度的激光二极管的基本模式。

    Fault tolerant laser diode package
    5.
    发明授权
    Fault tolerant laser diode package 有权
    容错激光二极管封装

    公开(公告)号：US07860136B2

    公开(公告)日：2010-12-28

    申请号：US11975951

    申请日：2007-10-23

    申请人： Edward F. Stephens, IV ,  Joseph L Levy ,  John S. Whiteley

    发明人： Edward F. Stephens, IV ,  Joseph L Levy ,  John S. Whiteley

    IPC分类号： H01S3/00

    CPC分类号： H01S5/02272 ,  H01S5/02476 ,  H01S5/06825 ,  H01S5/4018 ,  H01S5/4031 ,  H01S5/405

    摘要： A laser diode package (10) according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package (10) includes a laser diode bar (12), a forward-biased diode (14), a heat sink (18), and a lid (16) which may have fusible links (86). The laser diode bar (12) and the forward-biased diode (14) are electrically connected in parallel between the heat sink (18) and the lid (16). The emitting region of the laser diode bar (12) is aligned to emit radiation away from the forward-biased diode (14). Several packages can be stacked together to form a laser diode array (42). The forward-biased diode (14) allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar (12), thus preventing an open-circuit failure from completely disabling the array (42). The fusible links (86), if used on the lid (16), prevent damaged active regions (90) in a laser diode bar (12) from short-circuiting and drawing more electrical current than the other active regions (90).

    摘要翻译： 根据本发明的激光二极管封装（10）容忍短路和开路故障。 激光二极管封装（10）包括激光二极管条（12），正向偏置二极管（14），散热器（18）和可能具有易熔链（86）的盖子（16）。 激光二极管条（12）和正向偏置二极管（14）在散热器（18）和盖（16）之间并联电连接。 对准激光二极管条（12）的发射区域以发射远离正向偏置二极管（14）的辐射。 可以将多个封装堆叠在一起以形成激光二极管阵列（42）。 当相应的激光二极管条（12）中发生开路故障时，正向偏置二极管（14）允许电流通过它，从而防止开路故障完全禁用阵列（42）。 如果在盖子（16）上使用可熔连接件（86），则防止激光二极管条（12）中损坏的有源区域（90）与其它有源区域（90）相比短路并吸引更多的电流。

    Transform lens with a plurality of sliced lens segments
    6.
    发明授权
    Transform lens with a plurality of sliced lens segments 失效
    具有多个切片透镜段的变换透镜

    公开(公告)号：US5189294A

    公开(公告)日：1993-02-23

    申请号：US910466

    申请日：1992-07-08

    申请人： John E. Jackson ,  Joseph L. Levy ,  Christopher C. Leung ,  Gordon H. Burkhart

    发明人： John E. Jackson ,  Joseph L. Levy ,  Christopher C. Leung ,  Gordon H. Burkhart

    IPC分类号： G02B3/00

    CPC分类号： G02B3/005 ,  G02B3/00

    摘要： A sliced transform lens is used to combine and focus the optical output signals of a planar M by N laser diode array onto M detector elements in a linear detector by displacing lens slices. A sliced transform lens is used to separate the composite image of the laser diode array on the detector plane into ten spots (400 emitters per spot) by displacing the lens slices relative to each other collimated He-Ne laser beam was used to examine the sliced transform lens and the linear detector array was used to measure the image sizes and the crosstalks between the images. The results show the minimum separation is approximately five detector spacings apart. The lens elements are cut from a bulk material (BK-7) and ground to desired thickness and parallelism. Then the elements are "glued" together with standard optical wax compound and ground to the prescribed focal length. THe lens slices are cut before grinding, hence the composite lens is symmetric and zero-curf configuration is preserved. This relaxes the collimation requirement of the incoming light to some extent. The lens is then polished and ready for application.

    摘要翻译： 切片变换透镜用于通过移位透镜片将由N激光二极管阵列的平面M的光输出信号组合并聚焦到线性检测器中的M个检测器元件上。 使用切片变换透镜将检测器平面上的激光二极管阵列的合成图像分离成十个点（每点400个发射器），通过相对于彼此移位镜片切片，使用He-Ne激光束来检查切片 变换透镜和线性检测器阵列用于测量图像尺寸和图像之间的串扰。 结果表明，最小分离距离约为5个探测器间距。 透镜元件从大块材料（BK-7）切割并研磨成所需的厚度和平行度。 然后将这些元件与标准的光学蜡复合物“胶合”并研磨成规定的焦距。 在研磨之前切割透镜片，因此复合透镜是对称的，并且保持零卷曲构型。 这在一定程度上放松了入射光的准直要求。 然后将镜片抛光并准备应用。

    Method of cleaning a plurality of semiconductor devices
    7.
    发明授权
    Method of cleaning a plurality of semiconductor devices 失效
    清洁多个半导体器件的方法

    公开(公告)号：US5259925A

    公开(公告)日：1993-11-09

    申请号：US894479

    申请日：1992-06-05

    申请人： Robert W. Herrick ,  Joseph L. Levy ,  Danny J. Krebs

    发明人： Robert W. Herrick ,  Joseph L. Levy ,  Danny J. Krebs

    IPC分类号： H01L21/78 ,  H01S5/02 ,  H01L21/302 ,  B44C1/22

    CPC分类号： H01S5/0203 ,  H01L21/78 ,  H01S5/0202 ,  H01S5/0207 ,  Y10S148/028 ,  Y10S148/131 ,  Y10S438/978

    摘要： A method for cleaving semiconductor devices along planes accurately positioned. Resist is applied to a major surface of the semiconductor device and a mask is projected upon the resist covered major surface. The mask is opaque in those regions in which no cleave is desired. Following the exposure of the resist, the removal of the mask and the development of the resist, an ion beam is positioned incident upon the semiconductor surface such that ion beam etching occurs in the areas in which no resist covers the semiconductor structure. Once a sufficient depth is etched in the areas not covered with resist such that the strength of the semiconductor structure in those areas is significantly less than in those areas covered by resist, the ion beam etching process is ended and the resist is stripped from the semiconductor structure. Subsequently, force is applied within the area in which the ion beam etching occurred to cleave the semiconductor structure within that region. Such cleaving may occur either prior or subsequent to etching of facets for the semiconductor devices.

    摘要翻译： 一种沿准确定位的平面切割半导体器件的方法。 抗蚀剂被施加到半导体器件的主表面，并且掩模被投影在被覆盖的主表面上。 在不需要劈裂的区域中，掩模是不透明的。 在抗蚀剂暴露之后，除去掩模和显影抗蚀剂，离子束被定位入入半导体表面，使得在没有抗蚀剂覆盖半导体结构的区域中发生离子束蚀刻。 一旦在未被抗蚀剂覆盖的区域中蚀刻足够的深度，使得那些区域中的半导体结构的强度显着小于由抗蚀剂覆盖的那些区域的强度，则离子束蚀刻工艺结束，并且抗蚀剂从半导体 结构体。 随后，在发生离子束蚀刻的区域内施加力以在该区域内切割半导体结构。 这种切割可以在蚀刻半导体器件的刻面之前或之后发生。