公开(公告)号：US5367195A

公开(公告)日：1994-11-22

申请号：US1524

申请日：1993-01-08

申请人： Giulio DiGiacomo ,  Jung-Ihl Kim ,  Chandrasekhar Narayan ,  Sampath Purushothaman

发明人： Giulio DiGiacomo ,  Jung-Ihl Kim ,  Chandrasekhar Narayan ,  Sampath Purushothaman

IPC分类号： H01L23/12 ,  H01L21/28 ,  H01L23/485 ,  H01L23/498 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H05K3/24 ,  H05K3/34 ,  H05K3/38 ,  H01L23/48 ,  H01L29/46 ,  H01L29/62 ,  H01L29/64

CPC分类号： H01L24/05 ,  H01L23/49811 ,  H01L23/49866 ,  H01L23/532 ,  H01L24/03 ,  H01L24/48 ,  H05K3/244 ,  H01L2224/04042 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05172 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15787 ,  H05K3/388

摘要： This invention relates generally to structure and method for preventing metal diffusion between a noble metal layer and an adjoining non-noble metal layer, and more specifically to new structures and methods for providing a superbarrier structure between copper and an adjoining noble metal layer. This is achieved by sequentially deposited a layer of non-noble metal, a layer of titanium, a layer of molybdenum, and a layer of noble or relatively less noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.

摘要翻译： 本发明一般涉及用于防止贵金属层与相邻的非贵金属层之间的金属扩散的结构和方法，更具体地涉及在铜和邻接的贵金属层之间提供超级结构的新结构和方法。 这是通过依次沉积一层非贵金属，一层钛，一层钼，以及一层贵重或相对较低贵重金属作为互连冶金而实现的。 本发明还涉及用于将销或连接器或电线的至少一部分配合到衬底的改进的多层冶金垫或冶金结构。

公开(公告)号：US5420073A

公开(公告)日：1995-05-30

申请号：US192246

申请日：1994-02-07

申请人： Giulio DiGiacomo ,  Jung-Ihl Kim ,  Chandrasekhar Narayan ,  Sampath Purushothaman

发明人： Giulio DiGiacomo ,  Jung-Ihl Kim ,  Chandrasekhar Narayan ,  Sampath Purushothaman

IPC分类号： H01L23/12 ,  H01L21/28 ,  H01L23/485 ,  H01L23/498 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H05K3/24 ,  H05K3/34 ,  H05K3/38 ,  H01L21/44

CPC分类号： H01L24/05 ,  H01L23/49811 ,  H01L23/49866 ,  H01L23/532 ,  H01L24/03 ,  H01L24/48 ,  H05K3/244 ,  H01L2224/04042 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05172 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15787 ,  H05K3/388

摘要： This invention relates generally to structure and method for preventing metal diffusion between a noble metal layer and an adjoining non-noble metal layer, and more specifically to new structures and methods for providing a superbarrier structure between copper and an adjoining noble metal layer. This is achieved by sequentially deposited a layer of non-noble metal, a layer of titanium, a layer of molybdenum, and a layer of noble or relatively less noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.

摘要翻译： 本发明一般涉及用于防止贵金属层与相邻的非贵金属层之间的金属扩散的结构和方法，更具体地涉及在铜和邻接的贵金属层之间提供超级结构的新结构和方法。 这是通过依次沉积一层非贵金属，一层钛，一层钼，以及一层贵重或相对较低贵重金属作为互连冶金而实现的。 本发明还涉及用于将销或连接器或电线的至少一部分配合到衬底的改进的多层冶金垫或冶金结构。