公开(公告)号：US20050009356A1

公开(公告)日：2005-01-13

申请号：US10843508

申请日：2004-05-12

申请人： Akihiro Kojima ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Akihiro Kojima ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831

摘要： A method of manufacturing a semiconductor device according to an aspect of the present invention includes: forming a low-k dielectric film above a semiconductor substrate; forming a resist pattern above the low-k dielectric film; etching the low-k dielectric film using the resist pattern as a mask; and stripping the resist pattern by plasma processing using ammonium ions.

摘要翻译： 根据本发明的一个方面的制造半导体器件的方法包括：在半导体衬底上形成低k电介质膜; 在低k电介质膜上形成抗蚀剂图案; 使用抗蚀剂图案作为掩模蚀刻低k电介质膜; 并通过使用铵离子的等离子体处理剥离抗蚀剂图案。

公开(公告)号：US06576562B2

公开(公告)日：2003-06-10

申请号：US10014459

申请日：2001-12-14

申请人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

发明人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0271 ,  H01L21/288 ,  H01L21/31144 ,  H01L21/32051

摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

公开(公告)号：US06420271B2

公开(公告)日：2002-07-16

申请号：US09814839

申请日：2001-03-23

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

公开(公告)号：US08545670B2

公开(公告)日：2013-10-01

申请号：US12209617

申请日：2008-09-12

申请人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

发明人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

摘要翻译： 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。

公开(公告)号：US20090078678A1

公开(公告)日：2009-03-26

申请号：US12209617

申请日：2008-09-12

申请人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

发明人： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

摘要翻译： 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。

公开(公告)号：US08252193B2

公开(公告)日：2012-08-28

申请号：US12052522

申请日：2008-03-20

申请人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： G01R31/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US20080237185A1

公开(公告)日：2008-10-02

申请号：US12052522

申请日：2008-03-20

申请人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US06780278B2

公开(公告)日：2004-08-24

申请号：US09892481

申请日：2001-06-28

申请人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

发明人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/32532

摘要： A plasma processing apparatus comprises a grounded housing, a thin RF plate electrode, an opposite electrode facing the RF plate electrode, and a RF power source for applying a radio frequency to either the RF plate electrode or the opposite electrode to produce plasma between the two electrodes. If the radio frequency applied to the electrode is f (MHz), the parasitic capacity C (pF) between the grounded portion of the housing and a conductive portion through which the radio frequency propagates is less than 1210*f−0.9. The thickness of the RF plate electrode is 1 mm to 6 mm, and it is supported by a heat sink. The heat sink has a coolant passage in the proximity to the RF plate electrode. The heat sink also has a groove or a cavity in addition to the coolant passage, thereby reducing the value of the dielectric constant of the heat sink as a whole.

摘要翻译： 等离子体处理装置包括接地壳体，薄RF板电极，面对RF板电极的相对电极和用于将射频施加到RF板电极或相对电极的RF电源，以在两者之间产生等离子体 电极。 如果施加到电极的射频为f（MHz），则壳体的接地部分与射频传播的导电部分之间的寄生电容C（pF）小于1210×f <-0.9>。 RF板电极的厚度为1mm〜6mm，由散热片支撑。 散热器在RF板电极附近具有冷却剂通道。 除了冷却剂通道之外，散热器还具有凹槽或空腔，从而整体上降低了散热器的介电常数值。

公开(公告)号：US09583360B2

公开(公告)日：2017-02-28

申请号：US13424952

申请日：2012-03-20

申请人： Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

发明人： Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32174

摘要： In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.

摘要翻译： 在一个实施例中，基板处理装置包括：腔室; 设置在所述室中的第一电极; 设置在所述腔室中以面对所述第一电极并且保持衬底的第二电极; RF电源，向第二电极施加频率为50MHz以上的RF电压; 以及脉冲电源，用于在叠加在RF电压上的同时，将包括负电压脉冲和负电压脉冲的延迟时间的正电压脉冲的电压波形重复地施加到第二电极50纳秒以下。

公开(公告)号：US08821744B2

公开(公告)日：2014-09-02

申请号：US13051771

申请日：2011-03-18

申请人： Akio Ui ,  Hisataka Hayashi

发明人： Akio Ui ,  Hisataka Hayashi

IPC分类号： B44C1/22

CPC分类号： H01L21/31116 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174

摘要： A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

摘要翻译： 使用基板处理装置的基板处理方法包括第一步骤和第二步骤。 第一步是施加来自脉冲电源的负电压脉冲以包括在装置中。 第二步是在负电压脉冲和负电压脉冲之后的脉冲电源的正电压脉冲之间的时间间隔上施加浮动电位。 此外，该装置包括腔室，第一电极，第二电极，RF电源和脉冲电源。 第二电极设置成使得第二电极面对第一电极以保持基板。 RF电源对第二电极施加频率为50MHz以上的RF电压。 脉冲电源将具有RF电压的电压波形重复地施加到第二电极。