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    Semiconductor light projection apparatus and distance measurement apparatus
    3.
    发明授权
    Semiconductor light projection apparatus and distance measurement apparatus 失效
    半导体光投射装置和距离测量装置

    公开(公告)号：US06654399B1

    公开(公告)日：2003-11-25

    申请号：US09511778

    申请日：2000-02-23

    申请人： Yuji Kimura ,  Katsunori Abe ,  Kinya Atsumi

    发明人： Yuji Kimura ,  Katsunori Abe ,  Kinya Atsumi

    IPC分类号： H01S500

    CPC分类号： G01S17/936 ,  G01S7/4815 ,  G01S7/4817 ,  G01S7/484 ,  G01S17/42 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2924/00014

    摘要： In performing an light emitting operation using a plurality of semiconductor light-emitting devices, these semiconductor light-emitting devices are lighted up such that the driving current is lessened and the life time of the devices is prevented from being shortened and lights can be emitted to a remote site without reducing an amount of lights. Semiconductor laser devices 23a to 23c, which emit lights through independent lenses 25a to 25c, are connected in series to each other and connected to a signal generating circuit 24, serving as a power supply, so as to perform pulse lighting, whereby making it possible to light up three semiconductor laser devices simultaneously at a driving current corresponding to one semiconductor laser device. A package of semiconductor laser devices 23a to 23c comprises three lead terminals, and an electrical connection to two lead terminals, which are electrically insulated from a metallic base, is established. If a light collection point P is positioned in the midway of the detection distance range, the shifting quantity of the laser beams is minimized over substantially the entire area so that the amount of lights can be suppressed.

    摘要翻译： 在使用多个半导体发光器件进行发光操作时，这些半导体发光器件点亮，使得驱动电流减小，并且防止器件的寿命被缩短，并且可以将光发射到 远程站点，而不减少灯光量。 通过独立透镜25a至25c发光的半导体激光器件23a至23c彼此串联连接并连接到用作电源的信号发生电路24，从而使其成为可能 以对应于一个半导体激光器装置的驱动电流同时点亮三个半导体激光器件。 半导体激光器件23a至23c的封装包括三个引线端子，并且与两个引线端子的电连接，其与金属基底电绝缘。 如果光收集点P位于检测距离范围的中间，则激光束的移动量在整个面积上最小化，从而可以抑制光量。

    Semiconductor laser device
    4.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5559819A

    公开(公告)日：1996-09-24

    申请号：US423345

    申请日：1995-04-18

    申请人： Katsunori Abe ,  Yuji Kimura ,  Kinya Atsumi ,  Yoshiki Ueno ,  Noriyuki Matsushita

    发明人： Katsunori Abe ,  Yuji Kimura ,  Kinya Atsumi ,  Yoshiki Ueno ,  Noriyuki Matsushita

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/22 ,  H01S5/3432

    摘要： The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.

    摘要翻译： 半导体激光器件提供近似圆形的大输出激光束。 在n-GaAs衬底上形成n-GaAs层，其中还具有n-Al0.4Ga0.6As包层，n-Al0.2Ga0.8As光导层，由Al0形成的有源层的台面型。 2Ga0.8As / GaAs多量子阱结构，p-Al0.2Ga0.8As光导层，p-Al0.4Ga0.6As包层和p-GaAs层。 有源层的厚度为127.5nm，有源层和导光层的厚度之和为1.5μm以上。 在n-GaAs层和台面形状部分的上表面上形成绝缘膜和p型电极，其条纹宽度等于400μm。

    Semiconductor laser device
    6.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US06333945B1

    公开(公告)日：2001-12-25

    申请号：US09215259

    申请日：1998-12-18

    申请人： Katsunori Abe ,  Kinya Atsumi

    发明人： Katsunori Abe ,  Kinya Atsumi

    IPC分类号： H01S520

    CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3213 ,  H01S5/3432

    摘要： An active layer in which laser light is generated by injecting driving current therein is sandwiched between semiconductor layers. The active layer has a multi-quantum-well structure, and the layers located at both sides of the active layer are made of an AlGaAs-based material. Refractive indices of the layers are set asymmetrically with respect to the active layer by properly selecting aluminum-mixing ratios in AlGa. Since the light generated in the active layer is distributed more in a layer having a higher refractive index, a peak of the light distribution is shifted from the active layer into the layer having a higher refractive index. Thus, energy concentration to the active layer is avoided. A thickness of the layer having a higher refractive index may be made thicker to further enhance the energy concentration shift from the active layer.

    摘要翻译： 通过在其中注入驱动电流而产生激光的有源层夹在半导体层之间。 有源层具有多量子阱结构，并且位于有源层两侧的层由AlGaAs基材料制成。 通过适当地选择AlGa中的铝混合比，层的折射率相对于有源层设置为不对称。 由于在有源层中产生的光更多地分布在具有较高折射率的层中，所以光分布的峰值从有源层移动到具有较高折射率的层中。 因此，避免了对活性层的能量集中。 可以使具有较高折射率的层的厚度更厚以进一步增强从活性层的能量浓度偏移。

    Laser equipment
    7.
    发明申请
    Laser equipment 审中-公开
    激光设备

    公开(公告)号：US20070217473A1

    公开(公告)日：2007-09-20

    申请号：US11641111

    申请日：2006-12-19

    申请人： Katsunori Abe ,  Nobuyuki Otake

    发明人： Katsunori Abe ,  Nobuyuki Otake

    IPC分类号： H01S5/00

    CPC分类号： H01S3/0627 ,  H01S3/0604 ,  H01S3/08086 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/2391 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/18388 ,  H01S5/4093 ,  H01S5/423

    摘要： A laser equipment includes: a surface emitting laser for emitting an excitation light; a light converter for outputting an output light by receiving the excitation light; and a lens portion for collimating or concentrating a light. The surface emitting laser has an emitting surface for emitting the excitation light, and the light converter has an input surface for receiving the excitation light and an output surface for outputting the output light. The surface emitting laser, the light converter and the lens portion are integrally stacked so that the lens portion is disposed between the emitting surface of the surface emitting laser and the input surface of the light converter or disposed on the output surface of the light converter.

    摘要翻译： 激光设备包括：发射激发光的表面发射激光器; 光转换器，用于通过接收激发光来输出输出光; 以及用于准直或集中光的透镜部分。 表面发射激光器具有用于发射激发光的发射表面，并且光转换器具有用于接收激发光的输入表面和用于输出输出光的输出表面。 表面发射激光器，光转换器和透镜部分被整体堆叠，使得透镜部分设置在表面发射激光器的发射表面和光转换器的输入表面之间或者布置在光转换器的输出表面上。

    Method of fabricating a MIS transistor
    8.
    发明授权
    Method of fabricating a MIS transistor 失效
    制造MIS晶体管的方法

    公开(公告)号：US5753556A

    公开(公告)日：1998-05-19

    申请号：US623837

    申请日：1996-03-29

    申请人： Mitsutaka Katada ,  Hidetoshi Muramoto ,  Seiji Fujino ,  Tadashi Hattori ,  Katsunori Abe

    发明人： Mitsutaka Katada ,  Hidetoshi Muramoto ,  Seiji Fujino ,  Tadashi Hattori ,  Katsunori Abe

    IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L21/336

    CPC分类号： H01L21/823814 ,  H01L27/0928

    摘要： A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-thorough stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device. In the N-channel transistor part, an effective suppression of punch-through is achieved because of the small diffusion depth of the N-type diffusion region. Thereby, the decrease of threshold voltage caused by the short channel effect is effectively eliminated even when the gate length of the transistor is reduced.

    摘要翻译： 适用于器件小型化，通过热载流子效应消除操作特性劣化以及消除由短沟道效应引起的阈值电压降低的CMIS晶体管包括杂质浓度水平高于P- 型和N型阱，但低于源极和漏极区域，使得N型扩散区域横向延伸到位于绝缘栅极的边缘正下方的部分中，并且具有比源极和漏极区域的深度更小的深度 。 因此，该装置能够在源极和漏极区域的底部增加耗尽层的宽度，同时保持作为穿孔止动器的有效性。 由此，源极和漏极区域的结电容减小，器件的P沟道晶体管部分的器件的工作速度提高。 在N沟道晶体管部分中，由于N型扩散区域的扩散深度小，所以能够有效地抑制穿通。 因此，即使当晶体管的栅极长度减小时，由短沟道效应引起的阈值电压的降低也被有效地消除。

    Laser equipment
    9.
    发明申请
    Laser equipment 有权
    激光设备

    公开(公告)号：US20070217474A1

    公开(公告)日：2007-09-20

    申请号：US11641112

    申请日：2006-12-19

    申请人： Nobuyuki Otake ,  Katsunori Abe

    发明人： Nobuyuki Otake ,  Katsunori Abe

    IPC分类号： H01S3/10 ,  H01S5/00

    CPC分类号： H01S3/0627 ,  H01S3/0604 ,  H01S3/08086 ,  H01S3/094084 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/423

    摘要： A laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

    摘要翻译： 用于输出具有不同波长的输出光的激光设备包括：基板; 用于发射包括表面发射激光元件并且设置在所述基板上的激发光的激发光产生元件; 以及具有一对第二反射层和固体激光介质层的光转换器，两者均提供谐振器。 固体激光介质层能够通过接收激发光来产生具有不同峰值波长的光。 光转换器设置在激发光发生元件的输出表面上。

    Laser equipment
    10.
    发明申请
    Laser equipment 有权
    激光设备

    公开(公告)号：US20090238221A1

    公开(公告)日：2009-09-24

    申请号：US12457011

    申请日：2009-05-29

    申请人： Nobuyuki Otake ,  Katsunori Abe

    发明人： Nobuyuki Otake ,  Katsunori Abe

    IPC分类号： H01S3/10

    CPC分类号： H01S3/0627 ,  H01S3/0604 ,  H01S3/08086 ,  H01S3/094084 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/423

    摘要： Laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

    摘要翻译： 用于输出具有不同波长的输出光的激光设备包括：基板; 用于发射包括表面发射激光元件并且设置在所述基板上的激发光的激发光产生元件; 以及具有一对第二反射层和固体激光介质层的光转换器，两者均提供谐振器。 固体激光介质层能够通过接收激发光来产生具有不同峰值波长的光。 光转换器设置在激发光发生元件的输出表面上。