公开(公告)号：US5794839A

公开(公告)日：1998-08-18

申请号：US509234

申请日：1995-07-31

申请人： Yuji Kimura ,  Kinya Atsumi ,  Katsunori Abe ,  Noriyuki Matsushita ,  Michiyo Mizutani ,  Tetsuo Toyama

发明人： Yuji Kimura ,  Kinya Atsumi ,  Katsunori Abe ,  Noriyuki Matsushita ,  Michiyo Mizutani ,  Tetsuo Toyama

IPC分类号： H01L23/40 ,  C22C5/02 ,  H01L21/52 ,  H01L21/58 ,  H01L23/488 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042

CPC分类号： C22C5/02 ,  H01L23/488 ,  H01L24/32 ,  H01L24/83 ,  H01S5/0425 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45169 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/15788 ,  H01S5/02272 ,  H01S5/22

摘要： A material and method for bonding a semiconductor device to a pedestal, which can obtain a sufficient bonding strength and stable electric contact, are disclosed. On an n-type electrode constituting an ohmic electrode for a semiconductor laser device are formed a Ni layer and an Au-Sn solder layer. Then, the solder layer is melted and bonded to a heat sink provided with Au-plating. The film thickness of the Ni layer is set to approximately 500 .ANG. or more. When the solder layer is melted, Ni in the Ni layer diffuses into the solder layer and Sn in the solder layer diffuses into the Ni layer. By this mutual diffusion, bonding strength and wettability between the semiconductor device and pedestal can be improved. In addition, by setting the composition ratio of Ni layer to the Au-Sn solder layer to 1.3 wt % or more and under 10 wt %, bonding can be performed at a lower melting point and concurrently a higher bonding strength can be obtained.

摘要翻译： 公开了一种用于将半导体器件接合到基座上的材料和方法，其可以获得足够的接合强度和稳定的电接触。 在构成用于半导体激光器件的欧姆电极的n型电极上形成Ni层和Au-Sn焊料层。 然后，将焊料层熔化并结合到具有镀金的散热器上。 Ni层的膜厚设定为约500以上。 当焊料层熔化时，Ni层中的Ni扩散到焊料层中，焊料层中的Sn扩散到Ni层中。 通过这种相互扩散，可以提高半导体器件和基座之间的接合强度和润湿性。 此外，通过将Ni层与Au-Sn焊料层的组成比设定为1.3重量％以上且10重量％以下，可以在较低熔点下进行接合，同时能够获得更高的接合强度。

公开(公告)号：US5790577A

公开(公告)日：1998-08-04

申请号：US722679

申请日：1996-09-30

申请人： Yuji Kimura ,  Kinya Atsumi ,  Katsunori Abe ,  Tetsuo Toyama

发明人： Yuji Kimura ,  Kinya Atsumi ,  Katsunori Abe ,  Tetsuo Toyama

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S3/18 ,  H01S3/19

CPC分类号： H01S5/0425 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/12042

摘要： A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.

摘要翻译： 高输出半导体激光器元件具有作为P型电极的Cr / Pt / Au电极和Cr / Ni / Au电极中的一种，以提供相对于热稳定的可靠性高的电极结构，并且对于 很长一段时间 P型电极经由外延层配置在N型基板上，并且限定宽度为100μm以上的条纹41。

公开(公告)号：US5559819A

公开(公告)日：1996-09-24

申请号：US423345

申请日：1995-04-18

申请人： Katsunori Abe ,  Yuji Kimura ,  Kinya Atsumi ,  Yoshiki Ueno ,  Noriyuki Matsushita

发明人： Katsunori Abe ,  Yuji Kimura ,  Kinya Atsumi ,  Yoshiki Ueno ,  Noriyuki Matsushita

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/22 ,  H01S5/3432

摘要： The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.

摘要翻译： 半导体激光器件提供近似圆形的大输出激光束。 在n-GaAs衬底上形成n-GaAs层，其中还具有n-Al0.4Ga0.6As包层，n-Al0.2Ga0.8As光导层，由Al0形成的有源层的台面型。 2Ga0.8As / GaAs多量子阱结构，p-Al0.2Ga0.8As光导层，p-Al0.4Ga0.6As包层和p-GaAs层。 有源层的厚度为127.5nm，有源层和导光层的厚度之和为1.5μm以上。 在n-GaAs层和台面形状部分的上表面上形成绝缘膜和p型电极，其条纹宽度等于400μm。

公开(公告)号：US06654399B1

公开(公告)日：2003-11-25

申请号：US09511778

申请日：2000-02-23

申请人： Yuji Kimura ,  Katsunori Abe ,  Kinya Atsumi

发明人： Yuji Kimura ,  Katsunori Abe ,  Kinya Atsumi

IPC分类号： H01S500

CPC分类号： G01S17/936 ,  G01S7/4815 ,  G01S7/4817 ,  G01S7/484 ,  G01S17/42 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2924/00014

摘要： In performing an light emitting operation using a plurality of semiconductor light-emitting devices, these semiconductor light-emitting devices are lighted up such that the driving current is lessened and the life time of the devices is prevented from being shortened and lights can be emitted to a remote site without reducing an amount of lights. Semiconductor laser devices 23a to 23c, which emit lights through independent lenses 25a to 25c, are connected in series to each other and connected to a signal generating circuit 24, serving as a power supply, so as to perform pulse lighting, whereby making it possible to light up three semiconductor laser devices simultaneously at a driving current corresponding to one semiconductor laser device. A package of semiconductor laser devices 23a to 23c comprises three lead terminals, and an electrical connection to two lead terminals, which are electrically insulated from a metallic base, is established. If a light collection point P is positioned in the midway of the detection distance range, the shifting quantity of the laser beams is minimized over substantially the entire area so that the amount of lights can be suppressed.

摘要翻译： 在使用多个半导体发光器件进行发光操作时，这些半导体发光器件点亮，使得驱动电流减小，并且防止器件的寿命被缩短，并且可以将光发射到 远程站点，而不减少灯光量。 通过独立透镜25a至25c发光的半导体激光器件23a至23c彼此串联连接并连接到用作电源的信号发生电路24，从而使其成为可能 以对应于一个半导体激光器装置的驱动电流同时点亮三个半导体激光器件。 半导体激光器件23a至23c的封装包括三个引线端子，并且与两个引线端子的电连接，其与金属基底电绝缘。 如果光收集点P位于检测距离范围的中间，则激光束的移动量在整个面积上最小化，从而可以抑制光量。

公开(公告)号：US5802088A

公开(公告)日：1998-09-01

申请号：US719210

申请日：1996-09-25

申请人： Yoshinori Otsuka ,  Kinya Atsumi ,  Yuji Kimura

发明人： Yoshinori Otsuka ,  Kinya Atsumi ,  Yuji Kimura

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/40 ,  H01S3/04 ,  H01S3/091 ,  H01S3/097 ,  H01S3/19

CPC分类号： H01S5/4043 ,  H01S5/0224 ,  H01S5/02272

摘要： A stack type semiconductor laser device, which has a large overlapped area of beam patterns made by laser beams irradiated from a plurality of semiconductor laser elements, is disclosed. A first semiconductor laser element is formed on an N-type semiconductor substrate and is bonded to a surface of a pedestal at the side of an N-type electrode thereof through a solder layer. On the other hand, a second semiconductor laser element is differently formed on a P-type semiconductor substrate, and an N-type electrode thereof is bonded to a P-type electrode of the first semiconductor laser element through a solder layer in such a way that the laser beam irradiation planes of both semiconductor laser elements face in the same direction.

摘要翻译： 公开了一种叠层型半导体激光器件，其具有由多个半导体激光器元件照射的激光束制成的束图案的大的重叠区域。 第一半导体激光元件形成在N型半导体基板上，并通过焊料层与N型电极侧的基座的表面接合。 另一方面，第二半导体激光元件以不同的方式形成在P型半导体衬底上，并且其N型电极以这种方式通过焊料层接合到第一半导体激光元件的P型电极 两个半导体激光元件的激光束照射面朝向相同的方向。

公开(公告)号：US08803652B2

公开(公告)日：2014-08-12

申请号：US13145455

申请日：2010-01-14

申请人： Yuji Kimura ,  Takahiro Asada ,  Kazuaki Suzuki

发明人： Yuji Kimura ,  Takahiro Asada ,  Kazuaki Suzuki

IPC分类号： H01H37/76 ,  H01H37/04 ,  H01H85/20 ,  H01H85/04

CPC分类号： H01H37/761 ,  H01H1/5805 ,  H01H2037/768

摘要： A protection element is provided which is capable of stably retaining a flux on a soluble conductor at a predetermined position, enabling a speedy and precise blowout of the soluble conductor in the event of an abnormality. This protection element includes: a soluble conductor 13 which is disposed on an insulation baseboard 11 and is connected to a power supply path of a device targeted to be protected, to cause a blowout by means of a predetermined abnormal electric power; a flux 19 which is coated onto a surface of the soluble conductor 13; and an insulation cover 14 which is mounted on the baseboard 11 with the soluble conductor 13 being covered therewith. In addition, the protection element is provided with a protrusive stripe portion 20 which is formed on an interior face of the insulation cover 14 in opposite to the soluble conductor 13 and in which a stepped portion 20a for retaining the flux 19 is formed at a predetermined position while in contact with the flux 19. The soluble conductor 13 has a hole portion 13a at which the flux 19 is retained.

摘要翻译： 提供一种保护元件，其能够在预定位置上稳定地保持可溶性导体上的助熔剂，从而能够在异常情况下快速且精确地喷出可溶性导体。 该保护元件包括：可溶性导体13，其设置在绝缘基板11上并连接到被保护的装置的电源路径，以通过预定的异常电力引起井喷; 焊剂19，其涂覆在可溶性导体13的表面上; 以及绝缘盖14，其被安装在基板11上，可溶性导体13被覆盖。 此外，保护元件设置有突出条形部分20，其形成在绝缘盖14的与可溶性导体13相对的内表面上，并且其中用于保持焊剂19的阶梯部分20a形成在预定的 位置，同时与焊剂19接触。可溶性导体13具有孔部分13a，焊剂19保持在该孔部分13a。

公开(公告)号：US08794498B2

公开(公告)日：2014-08-05

申请号：US13181614

申请日：2011-07-13

申请人： Yuji Kimura ,  Hiroki Horiguchi

发明人： Yuji Kimura ,  Hiroki Horiguchi

IPC分类号： B23K31/02 ,  H01L21/44 ,  H01L21/441 ,  B81C3/00 ,  B81C1/00 ,  H01L23/00

CPC分类号： B81C3/001 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/036 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/166 ,  H01L2924/3025 ,  Y10T428/31678 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.

摘要翻译： 在电子部件装置的制造方法中，以包含例如以Sn为主要成分的低熔点金属的低熔点金属层配置成将厚度夹层的状态进行热粘合工序 方向，包括例如以Cu为主要成分的高熔点金属的高熔点金属层，其与限定要结合的第一和第二导体膜的高熔点金属相同或基本相同。 为了产生高熔点金属和低熔点金属的金属间化合物，降低了在每个低熔点金属层中高熔点金属扩散的距离。 因此，扩散所需的时间减少，并且键合所需的时间减少。

公开(公告)号：US20110291050A1

公开(公告)日：2011-12-01

申请号：US13147933

申请日：2010-02-26

申请人： Yuji Kimura ,  Yasushi Takai ,  Hirofumi Kawazoe

发明人： Yuji Kimura ,  Yasushi Takai ,  Hirofumi Kawazoe

IPC分类号： C09K11/78 ,  C04B35/64

CPC分类号： C09K11/7792 ,  C04B35/44 ,  C04B35/6268 ,  C04B35/62685 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3262 ,  C04B2235/3409 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/763 ,  C09K11/01 ,  Y02W30/72

摘要： Provided is a method for manufacturing MAl2O4:Eu,RE type long-lasting phosphor ceramics capable of producing the ceramics at a reduced raw material cost. In addition, provided is a sintered product of a long-lasting phosphor having no yellow body color. More specifically, provided are the method for manufacturing MAl2O4:Eu,RE type long-lasting phosphor ceramics in which M is an alkaline earth element and RE is a rare earth element other than europium, comprising mixing a BAM (alkaline earth aluminate) phosphor, an alkaline earth compound, an aluminum compound and a rare earth compound to form a mixture, and then firing the mixture; and a white MAl2O4:Eu,RE type long-lasting phosphor.

摘要翻译： 提供一种制造能够以降低的原材料成本制造陶瓷的MAl 2 O 4：Eu，RE型长效荧光体陶瓷的方法。 此外，提供了不具有黄色体色的长效荧光体的烧结体。 更具体地说，提供了制造Ml 2 O 4：Eu，RE型长效荧光体陶瓷的方法，其中M是碱土金属元素，RE是铕以外的稀土元素，包括混合BAM（碱土金属铝酸盐）荧光体， 碱土金属化合物，铝化合物和稀土化合物，形成混合物，然后烧结混合物; 和白色MAl2O4：Eu，RE型持久荧光粉。

公开(公告)号：US20110017253A1

公开(公告)日：2011-01-27

申请号：US12805153

申请日：2010-07-15

申请人： Mitsuhiro Kataoka ,  Yuji Kimura ,  Eiichi Okuno

发明人： Mitsuhiro Kataoka ,  Yuji Kimura ,  Eiichi Okuno

IPC分类号： H01L35/30

CPC分类号： H01J45/00

摘要： A thermionic converter includes an emitter electrode and a collector electrode. The emitter electrode includes a P-type diamond semiconductor layer doped with a P-type impurity. The emitter electrode is configured to emit a thermion from the P-type diamond semiconductor layer when heat is applied from an external power source. The collector electrode includes an N-type diamond semiconductor layer doped with an N-type impurity. The N-type diamond semiconductor layer opposes the P-type diamond semiconductor layer and is located at a predetermined distance from the P-type diamond semiconductor layer. The collector electrode is configured to receive the thermion emitted from the emitter electrode at the N-type diamond semiconductor layer.

摘要翻译： 热离子转换器包括发射极和集电极。 发射极包括掺杂有P型杂质的P型金刚石半导体层。 发射电极被配置为当从外部电源施加热时从P型金刚石半导体层发射热离子。 集电极包括掺杂有N型杂质的N型金刚石半导体层。 N型金刚石半导体层与P型金刚石半导体层相对，并且位于距离P型金刚石半导体层预定距离处。 集电极配置为接收在N型金刚石半导体层处从发射极发射的热电离。

公开(公告)号：US20070127741A1

公开(公告)日：2007-06-07

申请号：US11599354

申请日：2006-11-15

申请人： Yuji Kimura ,  Yoshitaka Yoshino ,  Koichi Mukai ,  Chisato Komori

发明人： Yuji Kimura ,  Yoshitaka Yoshino ,  Koichi Mukai ,  Chisato Komori

IPC分类号： H04R3/00

CPC分类号： H04H40/18 ,  H01Q1/242 ,  H01Q1/46 ,  H04B1/034 ,  H04M1/05

摘要： The present invention provides a receiver for making an earphone cord of an earphone function as an earphone antenna. The receiver includes a receiver circuit for receiving a broadcast wave signal received at the earphone code of the earphone and outputting an audio signal, an earphone jack into which a earphone plug is inserted, a first detector circuit for detecting whether the earphone is one of stereo and monaural functionalities, and a second detector circuit for the earphone is connected to the receiver. The earphone jack has an antenna terminal, left channel audio terminal and right channel audio terminal, a first detection terminal and a second detection terminal, and a ground terminal.

摘要翻译： 本发明提供一种用于制造耳机的耳机线作为耳机天线的接收机。 接收机包括接收电路，用于接收在耳机的耳机码处接收的广播波信号并输出​​音频信号，插入耳机插头的耳机插孔，用于检测耳机是否是立体声的第一检测器电路 和单声道功能，并且用于耳机的第二检测器电路连接到接收器。 耳机插孔具有天线端子，左声道音频端子和右声道音频端子，第一检测端子和第二检测端子以及接地端子。