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    Protective self-aligned buffer layers for damascene interconnects
    3.
    发明授权
    Protective self-aligned buffer layers for damascene interconnects 有权
    用于大马士革互连的保护性自对准缓冲层

    公开(公告)号：US07727881B1

    公开(公告)日：2010-06-01

    申请号：US11709293

    申请日：2007-02-20

    申请人： Kaushik Chattopadhyay ,  Bart van Schravendijk

    发明人： Kaushik Chattopadhyay ,  Bart van Schravendijk

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

    摘要翻译： 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

    Protective self-aligned buffer layers for damascene interconnects
    4.
    发明授权
    Protective self-aligned buffer layers for damascene interconnects 有权
    用于大马士革互连的保护性自对准缓冲层

    公开(公告)号：US08317923B1

    公开(公告)日：2012-11-27

    申请号：US12762223

    申请日：2010-04-16

    申请人： Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

    发明人： Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

    摘要翻译： 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

    Multistep method of depositing metal seed layers
    6.
    发明授权
    Multistep method of depositing metal seed layers 有权
    多步法沉积金属种子层

    公开(公告)号：US07682966B1

    公开(公告)日：2010-03-23

    申请号：US11701984

    申请日：2007-02-01

    申请人： Robert Rozbicki ,  Bart van Schravendijk ,  Tom Mountsier ,  Wen Wu

    发明人： Robert Rozbicki ,  Bart van Schravendijk ,  Tom Mountsier ,  Wen Wu

    IPC分类号： H01L23/535

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/5826 ,  C23C14/584 ,  H01L21/2855 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873

    摘要： Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves at least three operations. In this method, a first layer of metal is deposited onto the substrate to cover at least the bottom portions of the recessed features. The first layer of metal is subsequently redistributed to improve sidewall coverage of the recessed features. Next, a second layer of metal is deposited on at least the field region of the substrate and on the bottom portions of the recessed features. The method can be implemented using a PVD apparatus that allows deposition and resputtering operations. This sequence of operations can afford seed layers with improved step coverage. It also leads to decreased formation of voids in interconnects, and to improved resistance characteristics of formed IC devices.

    摘要翻译： 通过涉及至少三个操作的方法将金属种子层沉积在具有凹陷特征的半导体衬底上。 在该方法中，第一金属层沉积在基底上以至少覆盖凹陷特征的底部。 随后重新分布第一金属层以改善凹陷特征的侧壁覆盖。 接下来，在衬底的至少场区域和凹陷特征的底部上沉积第二层金属。 该方法可以使用允许沉积和重新溅射操作的PVD装置来实现。 这种操作顺序可以提供具有改进的台阶覆盖率的种子层。 它还导致互连中空隙的形成减少，并改善形成的IC器件的电阻特性。

    Protective self-aligned buffer layers for damascene interconnects
    7.
    发明授权
    Protective self-aligned buffer layers for damascene interconnects 有权
    用于大马士革互连的保护性自对准缓冲层

    公开(公告)号：US08430992B1

    公开(公告)日：2013-04-30

    申请号：US12763545

    申请日：2010-04-20

    申请人： Kaushik Chattopadhyay ,  Bart van Schravendijk

    发明人： Kaushik Chattopadhyay ,  Bart van Schravendijk

    IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

    CPC分类号： H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

    摘要翻译： 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

    Interfacial capping layers for interconnects
    10.
    发明授权
    Interfacial capping layers for interconnects 有权
    用于互连的界面覆盖层

    公开(公告)号：US08268722B2

    公开(公告)日：2012-09-18

    申请号：US12688154

    申请日：2010-01-15

    申请人： Jengyi Yu ,  Hui-Jung Wu ,  Girish Dixit ,  Bart van Schravendijk ,  Pramod Subramonium ,  Gengwei Jiang ,  George Andrew Antonelli ,  Jennifer O'loughlin

    发明人： Jengyi Yu ,  Hui-Jung Wu ,  Girish Dixit ,  Bart van Schravendijk ,  Pramod Subramonium ,  Gengwei Jiang ,  George Andrew Antonelli ,  Jennifer O'loughlin

    IPC分类号： H01L21/4763 ,  H01L29/40

    CPC分类号： H01L21/76834 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888

    摘要： Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

    摘要翻译： 使用驻留在金属线和电介质扩散阻挡层（或蚀刻停止）层之间的界面处的粘合层来改善互连的电迁移性能。 通过在暴露的铜线上沉积含金属材料（例如，含有Al，Ti，Ca，Mg等的材料）的前体层，并将前体层转化为钝化层（例如，氮化层 ）。 例如，含有暴露的Cu-O键的暴露的铜线的基板与三甲基铝接触以形成在铜表面上具有Al-O键和Al-C键的前体层。 然后处理前体层以除去残留的有机取代基并形成Al-N，Al-H键或两者。 处理可以包括直接等离子体处理，远程等离子体处理，UV处理和用诸如NH 3，H 2，N 2的气体及其混合物的热处理。 然后沉积介电扩散阻挡层。