公开(公告)号：US08173537B1

公开(公告)日：2012-05-08

申请号：US11693617

申请日：2007-03-29

申请人： Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

发明人： Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53295 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.

摘要翻译： 沉积期间的底层电介质扩散屏障和上覆介质层的紫外（UV）处理的稳定性对成功整合至关重要。 通过在氢饥饿环境中沉积该层而形成耐UV扩散阻挡层。 扩散阻挡层可以通过在沉积期间或之后的热，等离子体或UV处理更耐紫外线辐射。 降低扩散阻挡层的模量也可以提高耐UV辐射。

公开(公告)号：US06511922B2

公开(公告)日：2003-01-28

申请号：US09818359

申请日：2001-03-26

申请人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

公开(公告)号：US20050214457A1

公开(公告)日：2005-09-29

申请号：US10812717

申请日：2004-03-29

申请人： Francimar Schmitt ,  Kimberly Branshaw ,  Padmanabhan Krishnaraj ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Kimberly Branshaw ,  Padmanabhan Krishnaraj ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/312 ,  H01L21/316 ,  C23C16/00

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3122

摘要： A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N2O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N2O and oxygen as oxidizing gases, and a ratio of the flow rate of the N2O to a total flow rate of the N2O and the oxygen is between about 0.1 and about 0.5.

摘要翻译： 一种沉积低介电常数膜的方法包括：向室内提供包含环状有机硅氧烷和N 2 O 2的气体混合物作为氧化气体，并将RF功率施加到气体混合物以沉积低介电常数 电影。 气体混合物还可以包括氧和/或直链烃。 在一个方面，气体混合物包括N 2 O 3和氧气作为氧化气体，并且N 2 O 2的流量与总体流速的比率 N 2 O，氧在约0.1至约0.5之间。

公开(公告)号：US20050136684A1

公开(公告)日：2005-06-23

申请号：US10746695

申请日：2003-12-23

申请人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

发明人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76837

摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

摘要翻译： 可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。 在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层， 。 在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。 在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

公开(公告)号：US06633076B2

公开(公告)日：2003-10-14

申请号：US10283996

申请日：2002-10-30

申请人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L3100

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

摘要翻译： 本发明的方法和装置以这样的方式沉积氟化硅酸盐玻璃（FSG），使得它强烈地粘附到上覆的或下面的阻挡层或蚀刻停止层，并具有较低的介电常数以及其它益处。 在一个实施方案中，使用四氟化硅（SiF），氧（O 2 PDAT>）和氩（Ar） 作为反应气体，其中氧与硅的比例控制在约2:1至6:1之间。 这样的O 2 水平有助于减少陶瓷室组分的降解量，否则由于工艺配方中硅烷的消除而引起。