公开(公告)号：US08981557B2

公开(公告)日：2015-03-17

申请号：US13621318

申请日：2012-09-17

Applicant: Chih-Chiang Tu ,  Chun-Lang Chen

Inventor： Chih-Chiang Tu ,  Chun-Lang Chen

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.

Abstract translation: 公开了一种光伏电池的制造方法。 方法包括利用纳米压印技术制造具有选择性发射极和埋入接触（电极）结构的光伏电池。 所述方法包括提供具有第一表面和与第一表面相对的第二表面的半导体衬底; 在所述半导体衬底中邻近所述第一表面形成第一掺杂区; 执行纳米压印工艺和蚀刻工艺以在半导体衬底中形成沟槽，沟槽从第一表面延伸到半导体衬底中; 在所述沟槽内的所述半导体衬底中形成第二掺杂区域，所述第二掺杂区域具有比所述第一掺杂区域更大的掺杂浓度; 并用导电材料填充沟槽。 纳米压印工艺使用模具来定义电极线布局的位置。

公开(公告)号：US08922312B2

公开(公告)日：2014-12-30

申请号：US13853083

申请日：2013-03-29

Applicant: Wen-Hsiung Liao ,  Roger Hsieh ,  Hideo Ikuta ,  Yueh-Lang Chen

Inventor： Wen-Hsiung Liao ,  Roger Hsieh ,  Hideo Ikuta ,  Yueh-Lang Chen

IPC: H01F27/02

CPC classification number: H01F3/08 ,  H01F41/0246 ,  H01F2017/048

Abstract: An electronic device comprising a first magnetic powder, a second magnetic powder and a conducting wire buried in the mixture of the first magnetic powder and the second magnetic powder is provided. The conducting wire comprises an insulating encapsulant and a conducting metal encapsulated by the insulating encapsulant. The Vicker's Hardness of the first magnetic powder is greater than the Vicker's Hardness of the second magnetic powder, and the mean particle diameter of the first magnetic powder is larger than the mean particle diameter of the second magnetic powder. By means of the hardness difference of the first magnetic powder and the second magnetic powder, the mixture of the first magnetic powder and the second magnetic powder and the conducting wire buried therein are combined to form an integral magnetic body at the temperature lower than the melting point of the insulating encapsulant.

Abstract translation: 提供包括第一磁粉，第二磁粉和埋在第一磁粉和第二磁粉混合物中的导线的电子装置。 导线包括由绝缘密封剂封装的绝缘密封剂和导电金属。 第一磁性粉末的维氏硬度大于第二磁性粉末的维氏硬度，第一磁性粉末的平均粒径大于第二磁性粉末的平均粒径。 通过第一磁性粉末和第二磁性粉末的硬度差，将第一磁性粉末和第二磁性粉末与埋入其中的导线的混合物组合在一起形成一个低于熔化温度的整体磁体 点绝缘密封剂。

公开(公告)号：US08921014B2

公开(公告)日：2014-12-30

申请号：US13324755

申请日：2011-12-13

Applicant: Chue-San Yoo ,  Chun-Lang Chen

Inventor： Chue-San Yoo ,  Chun-Lang Chen

IPC: G03F1/58 ,  G03F1/54

CPC classification number: G03F1/58 ,  G03F1/54 ,  G03F1/80 ,  H01L21/0332

Abstract: A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoxSiyNz) layer. The first MoxSiyNz layer is over the transparent substrate. A percentage of molybdenum (x) of the first MoxSiyNz layer is between 1 and 2. A percentage of silicon (y) of the first MoxSiyNz layer is between 50 and 55. A percentage of nitride (z) of the first MoxSiyNz layer is between 40 and 50. The first MoxSiyNz layer has an opening therethrough.

Abstract translation: 第一实施例是包括透明基板和第一钼氮化硅（MoxSiyNz）层的光刻掩模。 第一个MoxSiyNz层在透明基底之上。 第一MoxSiyNz层的钼（x）的百分比在1和2之间。第一MoxSiyNz层的硅（y）的百分比在50和55之间。第一MoxSiyNz层的氮化物（z）的百分比在 第一MoxSiyNz层具有穿过其中的开口。

公开(公告)号：US08771436B2

公开(公告)日：2014-07-08

申请号：US13561266

申请日：2012-07-30

Applicant: Wen-Hsiung Liao ,  Roger Hsieh ,  Hideo Ikuta ,  Yueh-Lang Chen

Inventor： Wen-Hsiung Liao ,  Roger Hsieh ,  Hideo Ikuta ,  Yueh-Lang Chen

IPC: H01F1/22 ,  H01F1/153 ,  H01F27/255

CPC classification number: H01F27/255 ,  B22F3/12 ,  B22F3/16 ,  B22F5/00 ,  B22F7/08 ,  H01F1/22 ,  H01F17/04 ,  H01F27/24 ,  H01F27/2823 ,  H01F27/292 ,  H01F27/32 ,  H01F41/0246 ,  H01F2017/048 ,  H05K1/18

Abstract: An electronic device including a magnetic body and a wire is provided. The magnetic body has a first magnetic powder and a second magnetic powder mixed with the first magnetic powder. The Vicker's Hardness of the first magnetic powder is greater than that of the second magnetic powder and the mean particle diameter of the first magnetic powder is greater than that of the second magnetic powder.

Abstract translation: 提供了包括磁体和电线的电子设备。 磁体具有与第一磁性粉末混合的第一磁性粉末和第二磁性粉末。 第一磁粉的维氏硬度大于第二磁粉的硬度，第一磁粉的平均粒径大于第二磁粉的平均粒径。

公开(公告)号：US20130323625A1

公开(公告)日：2013-12-05

申请号：US13486015

申请日：2012-06-01

Applicant: Chih-Chiang Tu ,  Hsin-Chang Lee ,  Jong-Yuh Chang ,  Chia-Jen Chen ,  Chun-Lang Chen

Inventor： Chih-Chiang Tu ,  Hsin-Chang Lee ,  Jong-Yuh Chang ,  Chia-Jen Chen ,  Chun-Lang Chen

IPC: G03F1/00 ,  G03F1/26 ,  G03F1/36 ,  G03F1/50

CPC classification number: G03F1/36 ,  G03F1/50 ,  G03F1/58 ,  G03F1/80

Abstract: Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate MoxSiyONz material which can prevent damages to the quartz substrate when the process goes through etching steps three times. The island mask is defined on the mask blank by using various optical proximity correction rules.

Abstract translation: 公开了掩模毛坯和掩模的结构，以及制造掩模的方法。 当过程经过蚀刻步骤三次时，新的掩模坯料和掩模包括三层蚀刻停止层，以防止损坏石英基板。 三重蚀刻停止层可以包括含有氮（TaN）的钽的第一子层，含有氧（TaO）的钽的第二子层和TaN的第三子层。 或者，三重蚀刻停止层可以包括SiON材料的第一子层，TaO材料的第二子层和SiON材料的第三子层。 另一个替代方案可以是一层低蚀刻速率的MoxSiyONz材料，当该工艺经过蚀刻步骤三次时，其可以防止对石英衬底的损坏。 通过使用各种光学邻近校正规则在掩模空白上定义岛掩模。

公开(公告)号：US20130229251A1

公开(公告)日：2013-09-05

申请号：US13853083

申请日：2013-03-29

Applicant: Wen-Hsiung Liao ,  Roger Hsieh ,  Hideo Ikuta ,  Yueh-Lang Chen

Inventor： Wen-Hsiung Liao ,  Roger Hsieh ,  Hideo Ikuta ,  Yueh-Lang Chen

IPC: H01F3/08 ,  H01F41/02

CPC classification number: H01F3/08 ,  H01F41/0246 ,  H01F2017/048

Abstract: An electronic device comprising a first magnetic powder, a second magnetic powder and a conducting wire buried in the mixture of the first magnetic powder and the second magnetic powder is provided. The conducting wire comprises an insulating encapsulant and a conducting metal encapsulated by the insulating encapsulant. The Vicker's Hardness of the first magnetic powder is greater than the Vicker's Hardness of the second magnetic powder, and the mean particle diameter of the first magnetic powder is larger than the mean particle diameter of the second magnetic powder. By means of the hardness difference of the first magnetic powder and the second magnetic powder, the mixture of the first magnetic powder and the second magnetic powder and the conducting wire buried therein are combined to form an integral magnetic body at the temperature lower than the melting point of the insulating encapsulant.

Abstract translation: 提供包括第一磁粉，第二磁粉和埋在第一磁粉和第二磁粉混合物中的导线的电子装置。 导线包括由绝缘密封剂封装的绝缘密封剂和导电金属。 第一磁性粉末的维氏硬度大于第二磁性粉末的维氏硬度，第一磁性粉末的平均粒径大于第二磁性粉末的平均粒径。 通过第一磁性粉末和第二磁性粉末的硬度差，将第一磁性粉末和第二磁性粉末与埋入其中的导线的混合物组合在一起形成一个低于熔化温度的整体磁体 点绝缘密封剂。

公开(公告)号：US08484596B1

公开(公告)日：2013-07-09

申请号：US13614424

申请日：2012-09-13

Applicant: Doris Tzu Lang Chen ,  Deshanand Singh

Inventor： Doris Tzu Lang Chen ,  Deshanand Singh

IPC: G06F17/50

CPC classification number: G06F17/505 ,  G06F17/5054 ,  G06F17/5072 ,  G06F17/5077 ,  G06F17/5081

Abstract: A method for designing a system on a target device is disclosed. Extraction is performed on a first version of the system during synthesis in a first compilation resulting in a first netlist. Optimizations are performed on the first version of the system during synthesis in the first compilation resulting in a second netlist. Placement and routing are performed on the first version of the system in the first compilation. Extraction is performed on a second version of the system having a changed portion during synthesis in a second compilation resulting in a third netlist. The first version of the system in the first netlist and the second version of the system in the third netlist are differentiated to identify identical regions, wherein at least one of the performing and differentiating is performed by a processor.

Abstract translation: 公开了一种在目标设备上设计系统的方法。 在第一次汇编中的合成期间，在系统的第一版本上执行提取，得到第一个网表。 在第一次编译中的合成期间，在系统的第一版本上执行优化，从而产生第二个网表。 在第一个编译中，系统的第一个版本执行放置和布线。 在合成中具有改变部分的系统的第二版本在第二编译中执行提取，得到第三网表。 区分第一网表中的系统的第一版本和第三网表中的系统的第二版本，以识别相同的区域，其中执行和区分中的至少一个由处理器执行。

公开(公告)号：US20130095414A1

公开(公告)日：2013-04-18

申请号：US13324755

申请日：2011-12-13

Applicant: Chue-San Yoo ,  Chun-Lang Chen

Inventor： Chue-San Yoo ,  Chun-Lang Chen

IPC: G03F1/00 ,  G03F1/68

CPC classification number: G03F1/58 ,  G03F1/54 ,  G03F1/80 ,  H01L21/0332

Abstract: A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoxSiyNz) layer. The first MoxSiyNz layer is over the transparent substrate. A percentage of molybdenum (x) of the first MoxSiyNz layer is between 1 and 2. A percentage of silicon (y) of the first MoxSiyNz layer is between 50 and 55. A percentage of nitride (z) of the first MoxSiyNz layer is between 40 and 50. The first MoxSiyNz layer has an opening therethrough.

公开(公告)号：US07943986B2

公开(公告)日：2011-05-17

申请号：US11761547

申请日：2007-06-12

Applicant: Kuo-Nan Yang ,  Yi-Lang Chen ,  Hou-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

Inventor： Kuo-Nan Yang ,  Yi-Lang Chen ,  Hou-Yu Chen ,  Fu-Liang Yang ,  Chenming Hu

IPC: H01L29/66

CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/78615

Abstract: A method for fabricating a Finfet device with body contacts and a device fabricated using the method are provided. In one example, a silicon-on-insulator substrate is provided. A T-shaped active region is defined in the silicon layer of the silicon-on-insulator substrate. A source region and a drain region form two ends of a cross bar of the T-shaped active region and a body contact region forms a leg of the T-shaped active region. A gate oxide layer is grown on the active region. A polysilicon layer is deposited overlying the gate oxide layer and patterned to form a gate, where an end of the gate partially overlies the body contact region to complete formation of a Finfet device with body contact.

Abstract translation: 提供了一种用于制造具有主体触点的Finfet器件的方法和使用该方法制造的器件。 在一个示例中，提供绝缘体上硅衬底。 在绝缘体上硅衬底的硅层中限定T形有源区。 源极区域和漏极区域形成T形有源区域的横杆的两个端部，并且主体接触区域形成T形有源区域的腿部。 在有源区上生长栅氧化层。 沉积覆盖栅极氧化物层的多晶硅层并图案化以形成栅极，其中栅极的一端部分覆盖在主体接触区域上，以完成具有身体接触的Finfet器件的形成。

公开(公告)号：US20100039367A1

公开(公告)日：2010-02-18

申请号：US12333274

申请日：2008-12-11

Applicant: Wen-Chih Tai ,  Kuang-Lang Chen ,  Chia-Lin Liu ,  Chi-Neng Mo

Inventor： Wen-Chih Tai ,  Kuang-Lang Chen ,  Chia-Lin Liu ,  Chi-Neng Mo

IPC: G09G3/36

CPC classification number: G09G3/3406 ,  G09G3/3413 ,  G09G3/36 ,  G09G2310/0235

Abstract: A driving apparatus, a driving method and a liquid crystal display (LCD) using the same are provided, wherein the method includes the following steps of: setting a color display sequence, wherein the color display sequence is RGBG, RGRB or RBGB; alternately reading frame data from a first frame register and a second register according to a frame period having three field periods; and sequentially displaying four color data in a cycle period having four field periods according to the color display sequence and the read frame data. By utilizing the method in the present invention, color loss of a field sequential color display occurred in a lower temperature environment is improved.

Abstract translation: 提供了一种使用其的驱动装置，驱动方法和液晶显示器（LCD），其中该方法包括以下步骤：设置彩色显示顺序，其中彩色显示顺序为RGBG，RGRB或RBGB; 根据具有三个场周期的帧周期交替地从第一帧寄存器和第二寄存器读取帧数据; 并根据彩色显示顺序和读取的帧数据顺序地显示具有四个场周期的循环周期中的四色数据。 通过利用本发明的方法，在较低温度环境下发生的场顺序彩色显示的色彩损失得到改善。