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公开(公告)号：US07433115B2
公开(公告)日：2008-10-07
申请号：US11302469
申请日：2005-12-14
CPC分类号： G02B6/14 , A61B1/0017 , A61B1/063 , A61B1/0638 , A61B1/0653 , A61B1/07 , G02B6/262 , G02B23/2469 , G02B2207/113 , H01S5/005 , H01S5/02284 , H01S5/4025
摘要： A light emitting device comprises a first unit and a second unit, the first unit comprising: a first excitation light source comprising a laser element emitting blue wavelength band excitation light; a first wavelength converting member comprising at least one type of fluorescent material and which absorbs at least a portion of a first excitation light emitted from the first excitation light source, converts the wavelength, and releases light with a wavelength longer than the first excitation light; and a first light guide which has a refractive index in the center region of the cross-section which is higher than the refractive index of the surrounding region and which transmits the first excitation light emitted from the first excitation light source; and the second unit comprising: a second excitation light source comprising a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light emitted by the laser element; a second wavelength converting member which is similar of the above; and a second light guide which is similar of the above.
摘要翻译： 一种发光器件包括第一单元和第二单元，所述第一单元包括：第一激发光源，包括发射蓝色波长带激发光的激光元件; 第一波长转换构件，其包括至少一种类型的荧光材料，并且吸收从第一激发光源发射的第一激发光的至少一部分，转换波长，并释放波长比第一激发光长的光; 以及第一导光体，其在横截面的中心区域的折射率高于周围区域的折射率，并透射从第一激发光源发出的第一激发光; 并且所述第二单元包括：第二激发光源，包括发射具有比由所述激光元件发射的蓝色波长带激发光更短的波长带的激发光的激光元件; 与上述类似的第二波长转换构件; 以及与上述类似的第二光导。
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公开(公告)号：US20080089089A1
公开(公告)日：2008-04-17
申请号：US11662803
申请日：2005-09-28
申请人： Atsutomo Hama , Tomotaka Honda , Shinichi Nagahama , Junji Takeichi , Yoshinori Murazaki , Hiroto Tamaki , Yukihiro Hayashi
发明人： Atsutomo Hama , Tomotaka Honda , Shinichi Nagahama , Junji Takeichi , Yoshinori Murazaki , Hiroto Tamaki , Yukihiro Hayashi
IPC分类号： A61B1/07
CPC分类号： G02B6/4298 , A61B1/0017 , A61B1/0653 , A61B1/07 , A61B18/22 , A61B2018/2255 , G02B6/0003 , G02B6/0008 , G02B6/4206 , G02B6/4249
摘要： A light emitting device, comprises: an excitation light source that emits excitation light; a wavelength conversion member that absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band; a light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding), and which guides the light emitted from the wavelength conversion member to the outside; and wherein the wavelength conversion member is produced by laminating a plurality of layers that wavelength-convert different wavelengths of light.
摘要翻译： 一种发光器件，包括：发射激发光的激发光源; 吸收从激发光源发射的激发光的波长转换构件，其波长转换，并释放预定波长带的光; 导光体，其横截面的中心部分（芯部）的折射率高于周边部分（包层）的折射率，并将从波长转换部件发出的光引导到外部; 并且其中所述波长转换构件通过层叠波长转换不同波长的光的多个层来制造。
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公开(公告)号：US06711191B1
公开(公告)日：2004-03-23
申请号：US09519440
申请日：2000-03-03
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 &mgr;m and the etching depth is below the thickness of the p-side cladding layer of 0.1 &mgr;m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 &mgr;m, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.
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公开(公告)号：US06677619B1
公开(公告)日：2004-01-13
申请号：US09714143
申请日：2000-11-17
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US06172382B2
公开(公告)日：2001-01-09
申请号：US09004925
申请日：1998-01-09
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L33/04 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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6.发明授权Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权包含键合衬底的氮化物半导体器件及其制造方法公开(公告)号：US08030665B2
公开(公告)日：2011-10-04
申请号：US12113030
申请日：2008-04-30
申请人： Shinichi Nagahama , Masahiko Sano , Tomoya Yanamoto , Keiji Sakamoto , Masashi Yamamoto , Daisuke Morita
发明人： Shinichi Nagahama , Masahiko Sano , Tomoya Yanamoto , Keiji Sakamoto , Masashi Yamamoto , Daisuke Morita
IPC分类号： H01L29/26
CPC分类号： H01L33/44 , H01L21/76251 , H01L33/0079 , H01L33/32 , H01L33/483 , H01L33/508 , H01L33/62 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2924/01013 , H01L2924/01037 , H01L2924/12032 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。
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公开(公告)号：US20080205477A1
公开(公告)日：2008-08-28
申请号：US12106666
申请日：2008-04-21
IPC分类号： H01S3/08
CPC分类号： G02B6/14 , A61B1/0017 , A61B1/063 , A61B1/0638 , A61B1/0653 , A61B1/07 , G02B6/262 , G02B23/2469 , G02B2207/113 , H01S5/005 , H01S5/02284 , H01S5/4025
摘要： A light emitting device includes a first unit having a first excitation light source including a laser element emitting blue wavelength band excitation light, and a first wavelength converting member including at least one type of fluorescent material and which absorbs at least a portion of a first excitation light, converts the wavelength, and releases light with a wavelength longer than the first excitation light, and a second unit having a second excitation light source including a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light, and a second wavelength converting member which includes at least one type of fluorescent material and which absorbs at least a portion of a second excitation light, converts the wavelength, and releases light with a wavelength longer than the second excitation light. The first unit and the second unit are combined using a bundle fiber.
摘要翻译： 一种发光器件包括具有第一激发光源的第一单元，该第一激发光源包括发射蓝色波长带激发光的激光元件，以及包括至少一种类型的荧光材料的第一波长转换元件，其吸收至少一部分第一激发 光，转换波长并释放波长比第一激发光长的光，以及第二单元，具有第二激发光源，该第二激发光源包括发射具有比蓝色波长带激发光短的波长带的激发光的激光元件， 以及第二波长转换部件，其包括至少一种类型的荧光材料，并且吸收至少一部分第二激发光，转换波长，并释放波长比第二激发光长的光。 第一单元和第二单元使用束光纤组合。
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公开(公告)号：US20070189352A1
公开(公告)日：2007-08-16
申请号：US11702598
申请日：2007-02-06
IPC分类号： H01S3/091
CPC分类号： C09K11/7734 , A61B1/0653 , C09K11/7738 , C09K11/7741 , C09K11/7774 , C09K11/7789
摘要： A light emitting device, comprises: a light source that emits excitation light; a light guide that propagates the excitation light, and in which the refractive index of the center part (core) of a cross section is higher than the refractive index of the peripheral part (cladding); a wavelength conversion member that absorbs the excitation light propagated by the light guide and converts the wavelength thereof, and releases light of a predetermined wavelength band; and a shielding member that blocks the wavelength of at least part of the excitation light and the light emitted from the wavelength conversion member.
摘要翻译： 一种发光器件，包括：发射激发光的光源; 传播激发光的导光体，其中横截面的中心部分（芯部）的折射率高于周边部分（包层）的折射率; 波长转换构件，其吸收由所述导光体传播的激发光并转换其波长，并释放预定波长带的光; 以及屏蔽构件，其阻挡所述激发光的至少一部分的波长和从所述波长转换构件发射的光。
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公开(公告)号：US07211822B2
公开(公告)日：2007-05-01
申请号：US11026062
申请日：2005-01-03
IPC分类号： H01L31/0304
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。
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公开(公告)号：US20060267042A1
公开(公告)日：2006-11-30
申请号：US11493661
申请日：2006-07-27
申请人： Kunihiro Izuno , Kouki Matsumoto , Shinichi Nagahama , Masahiko Sano , Tomoya Yanamoto , Keiji Sakamoto
发明人： Kunihiro Izuno , Kouki Matsumoto , Shinichi Nagahama , Masahiko Sano , Tomoya Yanamoto , Keiji Sakamoto
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L21/76251 , H01L24/29 , H01L33/32 , H01L33/483 , H01L33/501 , H01L33/62 , H01L2224/0603 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/32257 , H01L2224/45144 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01037 , H01L2924/01046 , H01L2924/01057 , H01L2924/01063 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/09701 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/157 , H01L2924/181 , H01L2924/3025 , H01L2924/351 , H01L2924/00014 , H01L2924/0105 , H01L2924/00 , H01L2924/01026 , H01L2924/01027 , H01L2924/01042 , H01L2924/01074 , H01L2924/01049 , H01L2924/3512 , H01L2924/00012
摘要： A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).
摘要翻译： 一种发光装置，包括设置在支撑体（105）上的发光装置（101），以及涂覆层（（108,109）），其结合吸收由所述发光装置（101）发射的光并发光的荧光物质 所述涂层（108,109）由包含氧化物和氢氧化物的无机材料制成，每个含有至少一种选自以下的元素： 由Si，Al，Ga，Ti，Ge，P，B，Zr，Y，Sn，Pb和碱土金属组成的组，粘合层（110）由与涂层相同的无机材料 （108,109）。
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