公开(公告)号：US08421968B2

公开(公告)日：2013-04-16

申请号：US11850323

申请日：2007-09-05

申请人： Masumitsu Ino

发明人： Masumitsu Ino

IPC分类号： G02F1/1335 ,  G02F1/1333 ,  G02F1/1343

CPC分类号： G02F1/133555

摘要： Disclosed herein is a liquid crystal display apparatus in which a transmission region and a reflection region disposed in parallel. The apparatus includes first and second substrates and a liquid crystal layer disposed between the first and second substrates. The second substrate has at least a counter electrode, an interlayer insulating film and a pixel electrode for forming a fringe field for driving molecules of the liquid crystal. At least one parameter relating to the interlayer insulating film formed on the second substrate is set different between the transmission region side interlayer insulating film and the reflection region side interlayer insulating film so that driving voltages for the transmission and reflection regions are substantially equal to each other.

摘要翻译： 这里公开了一种液晶显示装置，其中平行布置有透射区域和反射区域。 该装置包括第一和第二基板和设置在第一和第二基板之间的液晶层。 第二基板具有至少对电极，层间绝缘膜和用于形成用于驱动液晶分子的边缘场的像素电极。 与在第二基板上形成的层间绝缘膜有关的至少一个参数在透射区域侧层间绝缘膜和反射区域侧层间绝缘膜之间设定为不同，使得透射和反射区域的驱动电压基本相等 。

公开(公告)号：US07755723B2

公开(公告)日：2010-07-13

申请号：US11948318

申请日：2007-11-30

申请人： Masumitsu Ino

发明人： Masumitsu Ino

IPC分类号： G02F1/1335 ,  G02F1/1333 ,  G02F1/1343

CPC分类号： G02F1/133555 ,  G02F1/133345 ,  G02F1/133371 ,  G02F1/133553 ,  G02F1/134363

摘要： A liquid crystal display device includes: a liquid crystal layer sandwiched between a first substrate and a second substrate; and a reflective display area on the first substrate side, the reflective display area being provided with a common electrode and a pixel electrode having a plurality of slits so as to apply an electric field to the liquid crystal layer, wherein between the first substrate and the pixel electrode, a reflective film and an interlayer insulating film, both films having projecting patterns on a front surface side, are arranged in this order from the first substrate side, and the pixel electrode and the common electrode are arranged so that electric field intensities between the pixel electrode and the common electrode are made equal in the reflective display area.

摘要翻译： 液晶显示装置包括：夹在第一基板和第二基板之间的液晶层; 以及第一基板侧的反射显示区域，反射显示区域设置有公共电极和具有多个狭缝的像素电极，以向液晶层施加电场，其中在第一基板和 像素电极，反射膜和层间绝缘膜，从第一基板侧依次配置具有表面侧的突出图案的两个膜，并且像素电极和公共电极配置成使得电场强度在 像素电极和公共电极在反射显示区域中相等。

公开(公告)号：US20090146967A1

公开(公告)日：2009-06-11

申请号：US12271326

申请日：2008-11-14

申请人： Masumitsu INO ,  Ying Bao Yang ,  Tsutomu Tanaka ,  Kazunori Yamaguchi ,  Masaru Higuchi

发明人： Masumitsu INO ,  Ying Bao Yang ,  Tsutomu Tanaka ,  Kazunori Yamaguchi ,  Masaru Higuchi

IPC分类号： G06F3/041

CPC分类号： G02F1/133526 ,  G02F2001/13312 ,  G02F2201/58 ,  G06F3/0412 ,  G06F3/0421

摘要： Disclosed herein is a display apparatus including a display section; a light radiating section; a plurality of light converging lenses; and a plurality of light receiving devices, wherein the display section includes pixel areas each used for creating a pixel section, and sensor areas each used for creating one of the light receiving devices; the light radiating section outputs light and radiates the output light to the display section from a particular-side surface of the display section; each of the light converging lenses is created in one of the sensor areas each located in the display section and converges light generated by the light radiating section on a focal point inside the display section, passing on the converged light to the other-side surface of the display section; and each of the light receiving devices is created in one of the sensor areas to serve as a device for receiving light which arrives at the other-side surface of the display section as light reflected by a subject of detection.

摘要翻译： 这里公开了一种显示装置，包括显示部分; 光辐射部分; 多个聚光透镜; 以及多个光接收装置，其中所述显示部分包括用于创建像素部分的每个像素区域，以及各自用于创建所述光接收装置之一的传感器区域; 光发射部分从显示部分的特定侧表面输出光并将输出光照射到显示部分; 每个聚光透镜被产生在每个位于显示部分中的传感器区域之一中，并且将由光辐射部分产生的光会聚在显示部分内的焦点上，并且将会聚光通过到另一侧表面 显示部分; 并且每个光接收装置被创建在一个传感器区域中，以用作用于接收作为由检测对象反射的光的显示部分的另一侧表面的光的装置。

公开(公告)号：US20080151156A1

公开(公告)日：2008-06-26

申请号：US11948318

申请日：2007-11-30

申请人： Masumitsu Ino

发明人： Masumitsu Ino

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133345 ,  G02F1/133371 ,  G02F1/133553 ,  G02F1/134363

摘要： A liquid crystal display device includes: a liquid crystal layer sandwiched between a first substrate and a second substrate; and a reflective display area on the first substrate side, the reflective display area being provided with a common electrode and a pixel electrode having a plurality of slits so as to apply an electric field to the liquid crystal layer, wherein between the first substrate and the pixel electrode, a reflective film and an interlayer insulating film, both films having projecting patterns on a front surface side, are arranged in this order from the first substrate side, and the pixel electrode and the common electrode are arranged so that electric field intensities between the pixel electrode and the common electrode are made equal in the reflective display area.

摘要翻译： 液晶显示装置包括：夹在第一基板和第二基板之间的液晶层; 以及第一基板侧的反射显示区域，反射显示区域设置有公共电极和具有多个狭缝的像素电极，以向液晶层施加电场，其中在第一基板和 像素电极，反射膜和层间绝缘膜，从第一基板侧依次配置具有表面侧的突出图案的两个膜，并且像素电极和公共电极配置成使得电场强度 像素电极和公共电极在反射显示区域中相等。

公开(公告)号：US20050253507A1

公开(公告)日：2005-11-17

申请号：US11108738

申请日：2005-04-19

申请人： Hiroshi Fujimura ,  Masumitsu Ino

发明人： Hiroshi Fujimura ,  Masumitsu Ino

IPC分类号： H01L51/50 ,  G09F9/30 ,  H01L27/32 ,  H05B33/14 ,  H05B33/26

CPC分类号： H01L27/3276 ,  H01L27/3211 ,  H01L27/3297 ,  H01L2251/5315

摘要： A display device able to maximize an area of a luminous region in a pixel and realize an image display in bright and high-definition, wherein luminous elements having a first electrode defining a luminous region; a transparent second electrode facing and arranged to the first electrode; a luminous layer arranged between the first electrode and the second electrode are arranged in a first and second direction in matrix, a plurality of first electrode interconnections extending in the first direction and connected to a plurality of the first electrodes arranged in the first direction is arranged in the display region, and a plurality of second electrode interconnections arranged in parallel to the first electrode to extend in the second direction and commonly connected to a plurality of the second electrodes arranged in the second direction is also arranged.

摘要翻译： 一种显示装置，其能够最大化像素中的发光区域的面积并实现明亮和高清晰度的图像显示，其中发光元件具有限定发光区域的第一电极; 面向并布置到所述第一电极的透明第二电极; 布置在第一电极和第二电极之间的发光层以矩阵形式布置在第一和第二方向上，多个沿第一方向延伸并连接到沿第一方向布置的多个第一电极的第一电极互连被布置 并且还布置了与第一电极平行布置的多个第二电极互连，以沿第二方向延伸并且共同连接到沿第二方向布置的多个第二电极。

公开(公告)号：US06632711B2

公开(公告)日：2003-10-14

申请号：US09731905

申请日：2000-12-08

申请人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

发明人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC分类号： H01L2184

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

摘要翻译： 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换为多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在某些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

公开(公告)号：US06424328B1

公开(公告)日：2002-07-23

申请号：US09271211

申请日：1999-03-17

申请人： Masumitsu Ino ,  Toshikazu Maekawa ,  Yoshiharu Nakajima ,  Hiroaki Ichikawa

发明人： Masumitsu Ino ,  Toshikazu Maekawa ,  Yoshiharu Nakajima ,  Hiroaki Ichikawa

IPC分类号： G09G330

CPC分类号： G09G3/3614 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2300/0876 ,  G09G2310/027 ,  G09G2310/0289 ,  G09G2310/0297 ,  G09G2320/0247

摘要： When time-division driving, which allows the number of output pins of a driver IC to be reduced, is applied to an active-matrix LCD apparatus, a time-division number is set to an odd number, preferably to the n-th (n: natural number) power of three, and a time-sequential signal (dot inversion signal) output from the driver IC is time-divided by a time-division switch and sent to signal lines 12-1, 12-2, 12-3, . . . to implement complete dot inversion driving.

摘要翻译： 当将有助于减少驱动器IC的输出引脚数的时分驱动应用于有源矩阵LCD装置时，将时分数设定为奇数，最好设定为第n（ n：自然数）三次的功率和从驱动器IC输出的时间顺序信号（点反转信号）通过时分开关进行时分，并发送到信号线12-1,12-2,12- 3，。 。 。 实现完整的点反转驱动。

公开(公告)号：US06248606B1

公开(公告)日：2001-06-19

申请号：US09219137

申请日：1998-12-22

申请人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

发明人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L29/66757

摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

摘要翻译： 在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管 一个芯片的分段区域。 此后，在分割区域内形成一个图像（帧）的像素电极。 在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。 通过间歇式热处理，促进了半导体薄膜的结晶化。 此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。

公开(公告)号：US5932484A

公开(公告)日：1999-08-03

申请号：US950933

申请日：1997-10-15

申请人： Toshihiko Iwanaga ,  Masumitsu Ino ,  Kikuo Kaise ,  Takenobu Urazono ,  Hiroyuki Ikeda

发明人： Toshihiko Iwanaga ,  Masumitsu Ino ,  Kikuo Kaise ,  Takenobu Urazono ,  Hiroyuki Ikeda

IPC分类号： H01L21/30 ,  H01L21/336 ,  H01L29/786 ,  H01L21/331 ,  H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/3003 ,  H01L29/78606 ,  H01L29/78675 ,  Y10S438/902

摘要： A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment which comprises the interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.

摘要翻译： 一种薄膜半导体器件，包括在绝缘基板上具有薄膜半导体以限定元件区域的薄膜晶体管（TFT）和覆盖元件的吸湿层间电介质。 一种氢化处理，其包括在其上设置用于阻止氢扩散的盖膜的层间电介质，使得被层间电介质捕获的水可能被分解，以产生氢，该氢被允许扩散到设置在与 帽膜。

公开(公告)号：US5888839A

公开(公告)日：1999-03-30

申请号：US429613

申请日：1995-04-27

申请人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

发明人： Masumitsu Ino ,  Hisao Hayashi ,  Masafumi Kunii ,  Takenobu Urazono ,  Shizuo Nishihara ,  Masahiro Minegishi

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/2026 ,  G02F1/13454

摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

摘要翻译： 在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管 一个芯片的分段区域。 此后，在分割区域内形成一个图像（帧）的像素电极。 在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。 通过间歇式热处理，促进了半导体薄膜的结晶化。 此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。