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    FOCUSING MEMBER AND OPTOELECTRONIC DEVICE
    5.
    发明申请
    FOCUSING MEMBER AND OPTOELECTRONIC DEVICE 有权
    聚焦会员和光电设备

    公开(公告)号：US20110097033A1

    公开(公告)日：2011-04-28

    申请号：US12605891

    申请日：2009-10-26

    申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    IPC分类号： G02B6/12 ,  G02B1/10 ,  G02B6/32

    CPC分类号： G02B6/12004 ,  G02B6/305

    摘要： A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

    摘要翻译： 提供聚焦构件和具有该聚焦构件的光电子器件。 聚焦构件包括多个级别的导电插塞和多层导电层，这些导电层一起形成反转的半舟形状。 光电子器件包括底层，底层上方的光波导，覆盖光波导的电介质层，以及设置在光电子器件的边缘并位于光波导上方的电介质层中的上述聚焦构件。 聚焦构件的反转半舟形的较宽端面向光电器件的外侧。 底层和电介质层的折射率小于光波导的折射率。

    MEMS DEVICE AND METHOD FOR FABRICATING THE SAME
    6.
    发明申请
    MEMS DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    MEMS器件及其制造方法

    公开(公告)号：US20110057288A1

    公开(公告)日：2011-03-10

    申请号：US12943269

    申请日：2010-11-10

    申请人： Tzung-Han TAN ,  Bang-Chiang LAN ,  Ming-I WANG ,  Chien-Hsin HUANG ,  Meng-Jia LIN

    发明人： Tzung-Han TAN ,  Bang-Chiang LAN ,  Ming-I WANG ,  Chien-Hsin HUANG ,  Meng-Jia LIN

    IPC分类号： H01L29/06 ,  H01L21/71

    CPC分类号： B81C1/00246 ,  B81B3/0072 ,  B81B2203/04 ,  B81B2207/015 ,  B81C2201/0167

    摘要： A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The MEMS device includes a first electrode and a second electrode. The first electrode is disposed on a substrate, and includes at least two metal layers, a first protection ring and a dielectric layer. The first protection ring connects two adjacent metal layers, so as to define an enclosed space between two adjacent metal layers. The dielectric layer is disposed in the enclosed space and connects two adjacent metal layers. The second electrode is disposed on the first electrode, wherein a cavity is formed between the first electrode and the second electrode.

    摘要翻译： 描述了微机电系统（MEMS）装置及其制造方法。 MEMS器件包括第一电极和第二电极。 第一电极设置在基板上，并且包括至少两个金属层，第一保护环和介电层。 第一保护环连接两个相邻的金属层，以便限定两个相邻金属层之间的封闭空间。 电介质层设置在封闭空间中并连接两个相邻的金属层。 第二电极设置在第一电极上，其中在第一电极和第二电极之间形成空腔。

    Method for fabricating integrated circuit
    8.
    发明授权
    Method for fabricating integrated circuit 有权
    集成电路制造方法

    公开(公告)号：US08460960B2

    公开(公告)日：2013-06-11

    申请号：US13186607

    申请日：2011-07-20

    申请人： Meng-Jia Lin ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang

    发明人： Meng-Jia Lin ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang

    IPC分类号： H01L21/00

    CPC分类号： H01L21/31144 ,  B81C1/00246 ,  B81C2203/0714 ,  H01L27/0617

    摘要： A method for fabricating integrated circuit is provided. First, a first interconnect structure including a plurality of first dielectric layers and a plurality of first conductive patterns stacked therewith alternately is formed on a MEMS region of a conductive substrate. Next, an interlayer is formed on the first interconnect structure and covering the first conductive patterns. Next, a poly silicon mask layer corresponding to the first conductive patterns is formed on the interlayer and exposing a portion of the media layer. Next, the portion of the interlayer exposed by the poly silicon mask layer and a portion of the first dielectric layer corresponding thereto are removed to form a plurality of openings. Then, a portion of the conductive substrate in the MEMS region is removed.

    摘要翻译： 提供一种用于制造集成电路的方法。 首先，在导电基板的MEMS区域上形成包括多个第一电介质层和交替堆叠的多个第一导电图案的第一互连结构。 接下来，在第一互连结构上形成中间层并覆盖第一导电图案。 接下来，在中间层上形成对应于第一导电图案的多晶硅掩模层，并暴露介质层的一部分。 接下来，去除由多晶硅掩模层暴露的层的部分和与其对应的第一介电层的一部分，以形成多个开口。 然后，去除MEMS区域中的导电衬底的一部分。

    METHOD FOR FABRICATING INTEGRATED CIRCUIT
    9.
    发明申请
    METHOD FOR FABRICATING INTEGRATED CIRCUIT 有权
    制造集成电路的方法

    公开(公告)号：US20130023081A1

    公开(公告)日：2013-01-24

    申请号：US13186607

    申请日：2011-07-20

    申请人： Meng-Jia LIN ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang

    发明人： Meng-Jia LIN ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31144 ,  B81C1/00246 ,  B81C2203/0714 ,  H01L27/0617

    摘要： A method for fabricating integrated circuit is provided. First, a first interconnect structure including a plurality of first dielectric layers and a plurality of first conductive patterns stacked therewith alternately is formed on a MEMS region of a conductive substrate. Next, an interlayer is formed on the first interconnect structure and covering the first conductive patterns. Next, a poly silicon mask layer corresponding to the first conductive patterns is formed on the interlayer and exposing a portion of the media layer. Next, the portion of the interlayer exposed by the poly silicon mask layer and a portion of the first dielectric layer corresponding thereto are removed to form a plurality of openings. Then, a portion of the conductive substrate in the MEMS region is removed.

    摘要翻译： 提供一种用于制造集成电路的方法。 首先，在导电基板的MEMS区域上形成包括多个第一电介质层和交替堆叠的多个第一导电图案的第一互连结构。 接下来，在第一互连结构上形成中间层并覆盖第一导电图案。 接下来，在中间层上形成对应于第一导电图案的多晶硅掩模层，并暴露介质层的一部分。 接下来，去除由多晶硅掩模层暴露的层的部分和与其对应的第一介电层的一部分，以形成多个开口。 然后，去除MEMS区域中的导电衬底的一部分。

    Optoelectronic device and method of forming the same
    10.
    发明授权
    Optoelectronic device and method of forming the same 有权
    光电器件及其形成方法

    公开(公告)号：US08139907B2

    公开(公告)日：2012-03-20

    申请号：US12648861

    申请日：2009-12-29

    申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12004 ,  G02B2006/12061

    摘要： An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

    摘要翻译： 提供了包括基板，半舟形材料层，深沟槽隔离结构和光波导的光电子器件。 衬底具有第一区域。 半船形材料层设置在第一区域内的基板内。 半舟状材料层的折射率低于基板的折射率。 半舟状材料层的上表面与基板的表面共面。 深沟槽隔离结构设置在第一区域内的基板中，并且位于半舟形材料层的弓形部分的一侧。 光波导路设置在第一区域内的基板上。 光波导与深沟槽隔离结构的一部分和半舟形材料层的至少一部分重叠。