公开(公告)号：US5880032A

公开(公告)日：1999-03-09

申请号：US689111

申请日：1996-07-30

申请人： Kenji Doi ,  Ichiro Katakabe ,  Naoto Miyashita

发明人： Kenji Doi ,  Ichiro Katakabe ,  Naoto Miyashita

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116 ,  Y10S438/906

摘要： A method of manufacturing a semiconductor device comprises the steps of introducing a first gas containing steam or alcohol into a processing vessel housing a semiconductor substrate, and introducing a hydrogen fluoride gas as a second gas into the processing vessel after stopping introduction of the first gas into the process chamber.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：将含有蒸汽或醇的第一气体引入到容纳半导体衬底的处理容器中，并且在停止将第一气体引入第一气体之后，将作为第二气体的氟化氢气体引入处理容器 处理室。

公开(公告)号：US5878191A

公开(公告)日：1999-03-02

申请号：US451509

申请日：1995-05-26

申请人： Naoto Miyashita ,  Ichiro Katakabe ,  Hiroshi Kawamoto ,  Kenji Doi ,  Tsuyoshi Okuda

发明人： Naoto Miyashita ,  Ichiro Katakabe ,  Hiroshi Kawamoto ,  Kenji Doi ,  Tsuyoshi Okuda

IPC分类号： H01L21/22 ,  H01L21/00 ,  H01L21/324 ,  C23L16/00

CPC分类号： H01L21/67115

摘要： A heat treatment apparatus for semiconductor wafers includes a reaction chamber, a heater, a heat-insulating member, a first cooling gas path, a second cooling gas path, a blower and a controller. The reaction chamber houses semiconductor wafers. The heater is provided outside the reaction chamber to heat it. The heat-insulating member is provided outside the heater to keep the temperature of the reaction chamber. The first cooling gas path is interposed between the reaction chamber and heater, while the second cooling gas path is disposed between the heater and heat-insulating member. The blower allows gas to flow through the first and second gas paths to cool the reaction chamber. The controller controls the heater to increase the temperature of the reaction chamber and does the blower to decrease the temperature thereof.

摘要翻译： 用于半导体晶片的热处理装置包括反应室，加热器，绝热构件，第一冷却气体路径，第二冷却气体路径，鼓风机和控制器。 反应室容纳半导体晶片。 加热器设置在反应室外部以加热。 隔热构件设置在加热器的外侧，以保持反应室的温度。 第一冷却气体路径介于反应室和加热器之间，而第二冷却气体路径设置在加热器和绝热构件之间。 鼓风机允许气体流过第一和第二气体通道以冷却反应室。 控制器控制加热器以增加反应室的温度，并且鼓风机降低其温度。

公开(公告)号：US5605488A

公开(公告)日：1997-02-25

申请号：US329423

申请日：1994-10-27

申请人： Hiroyuki Ohashi ,  Naoto Miyashita ,  Ichiro Katakabe ,  Tetsuya Tsukihara

发明人： Hiroyuki Ohashi ,  Naoto Miyashita ,  Ichiro Katakabe ,  Tetsuya Tsukihara

IPC分类号： H01L21/683 ,  B24B37/005 ,  B24B37/015 ,  B24B37/30 ,  B24B49/14 ,  H01L21/304 ,  B24B49/00

CPC分类号： B24B37/30 ,  B24B49/14

摘要： A plurality of cells are provided in a concave portion of a top plate. A cloth to which water is penetrated is provided in a back face of each cell, and a wafer is attracted by the cloth. First and second pipes are connected to each cell. The first pipe introduces liquid to the cell, and the second pipe discharges liquid from the cell, and guides liquid to the first pipe. A constant-temperature device is provided to each first pipe, and a temperature of liquid of each cell is adjusted by the constant-temperature device in accordance with a temperature distribution of the wafer. Whereby, a polishing rate of each part of the wafer can be equalized.

摘要翻译： 多个电池设置在顶板的凹部中。 在每个电池的背面设置有穿透水的布，并且晶片被布吸引。 第一和第二管连接到每个电池。 第一管将液体引入电池，第二管从电池中排放液体，并将液体引导到第一管。 向每个第一管道提供恒温装置，并且根据晶片的温度分布由恒温装置调节每个电池的液体的温度。 由此，晶片的每个部分的抛光速率可以相等。

公开(公告)号：US5943578A

公开(公告)日：1999-08-24

申请号：US840697

申请日：1997-04-25

申请人： Ichiro Katakabe ,  Naoto Miyashita ,  Hiroshi Kawamoto

发明人： Ichiro Katakabe ,  Naoto Miyashita ,  Hiroshi Kawamoto

IPC分类号： H01L21/331 ,  H01L29/06 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L29/0649 ,  H01L29/732

摘要： The first trench is formed in the region of the semiconductor substrate, in which an element isolation region is to be formed, and the first buried member, which is insulative, is buried in the first trench. Then, the second trench, having a width smaller than that of the first trench, is made in the first buried member, and the portion of the semiconductor substrate which is located at the bottom portion of the first trench, and the insulating second buried member is buried in the second trench, thereby forming the element isolation region.

摘要翻译： 第一沟槽形成在要形成元件隔离区域的半导体衬底的区域中，并且绝缘的第一掩埋构件被埋在第一沟槽中。 然后，在第一掩埋构件中形成具有小于第一沟槽的宽度的第二沟槽，并且位于第一沟槽的底部的半导体衬底的部分和绝缘的第二埋入构件 被埋在第二沟槽中，从而形成元件隔离区域。

公开(公告)号：US5643046A

公开(公告)日：1997-07-01

申请号：US390529

申请日：1995-02-17

申请人： Ichiro Katakabe ,  Naoto Miyashita ,  Tatsuo Akiyama

发明人： Ichiro Katakabe ,  Naoto Miyashita ,  Tatsuo Akiyama

IPC分类号： B24B37/013 ,  B24B49/04 ,  H01L21/304 ,  B24B7/22 ,  B24B49/12

CPC分类号： B24B37/013 ,  B24B49/04

摘要： A polishing method and apparatus are provided for detecting the polishing end point of a semi-conductor wafer having a polishing film and a stopper film formed thereon. First driving means are provided having a first drive shaft for rotating a polishing plate and a polishing cloth thereon. Second driving means having a second rotatable drive shaft are also provided. Mounting means for mounting the semi-conductor wafer is adapted to be rotated by the second driving means for polishing the wafer. Energy supplying means for supplying prescribed energy to the semi-conductor wafer are also included. Finally, detecting means for detecting a polishing end point of the polishing film is included and detects a variation of the energy supplied to the semi-conductor wafer. Different types of energy can be utilized such as infrared light and a vibration wave.

摘要翻译： 提供了一种抛光方法和装置，用于检测在其上形成有抛光膜和阻挡膜的半导体晶片的研磨终点。 第一驱动装置设置有用于使研磨板和抛光布旋转的第一驱动轴。 还提供具有第二可旋转驱动轴的第二驱动装置。 用于安装半导体晶片的安装装置适于通过用于抛光晶片的第二驱动装置旋转。 还包括用于向半导体晶片提供规定能量的能量供给装置。 最后，包括用于检测抛光膜的抛光终点的检测装置，并且检测提供给半导体晶片的能量的变化。 可以使用不同类型的能量，例如红外光和振动波。

公开(公告)号：US06354913B1

公开(公告)日：2002-03-12

申请号：US09214431

申请日：1999-01-06

申请人： Naoto Miyashita ,  Yoshihiro Minami ,  Kenji Doi ,  Jun Takayasu ,  Hiroyuki Kohno ,  Hiroshi Kato ,  Kazuhiko Hayashi

发明人： Naoto Miyashita ,  Yoshihiro Minami ,  Kenji Doi ,  Jun Takayasu ,  Hiroyuki Kohno ,  Hiroshi Kato ,  Kazuhiko Hayashi

IPC分类号： B24B100

CPC分类号： B24B37/24 ,  B24B37/0056 ,  B24B37/044 ,  B24D3/20 ,  B24D3/344 ,  C09G1/02 ,  H01L21/3212

摘要： A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.

摘要翻译： 通过使用包含二氧化硅颗粒作为主要成分的研磨剂，作为溶剂的水和水溶性纤维素，研磨剂的碱金属杂质含量为5ppm或以下，研磨半导体晶片或其上形成的膜 抛光剂含有C％（重量）的水溶性纤维素，以使得半导体晶片平坦化，而不会对晶片或其上形成的膜造成损害，而不会在抛光表面产生凹陷问题。

公开(公告)号：US6045605A

公开(公告)日：2000-04-04

申请号：US78668

申请日：1998-05-14

申请人： Kenji Doi ,  Naoto Miyashita ,  Masahiro Abe ,  Hiroyuki Kohno ,  Hiroshi Kato ,  Kazuhiko Hayashi

发明人： Kenji Doi ,  Naoto Miyashita ,  Masahiro Abe ,  Hiroyuki Kohno ,  Hiroshi Kato ,  Kazuhiko Hayashi

IPC分类号： B24B37/00 ,  B24B57/02 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B57/02 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463

摘要： An abrasive material is prepared by dispersing silicon nitride particles acting as abrasive particles in a solvent such as a pure water or an ultra pure water, followed by adding an adsorptive stickable to the abrasive particles to the dispersion. The resultant abrasive material permits diminishing the polishing rate of a silicon nitride film used as a stopper film, with the result that a CVD SiO.sub.2 film to be polished is selectively polished relative to the Si.sub.3 N.sub.4 film used as the stopper film. This makes it possible to make the stopper film as thin as possible and permits the CVD SiO.sub.2 film to be flattened efficiently without bringing about a dishing problem.

摘要翻译： 研磨材料通过将作为磨料颗粒的氮化硅颗粒分散在诸如纯水或超纯水的溶剂中，然后向分散体中添加粘附到磨料颗粒上的吸附剂来制备。 所得的研磨材料允许减少用作阻挡膜的氮化硅膜的抛光速率，结果是相对于用作阻挡膜的Si 3 N 4膜选择性地抛光待抛光的CVD SiO 2膜。 这使得可以使阻挡膜尽可能薄，并且可以有效地使CVD SiO 2膜平坦化，而不会产生凹陷问题。

公开(公告)号：US20050250423A1

公开(公告)日：2005-11-10

申请号：US11178318

申请日：2005-07-12

申请人： Kenro Nakamura ,  Naoto Miyashita ,  Takashi Yoda ,  Katsuya Okumura

发明人： Kenro Nakamura ,  Naoto Miyashita ,  Takashi Yoda ,  Katsuya Okumura

IPC分类号： B24B9/00 ,  B24B9/06 ,  B24B21/00 ,  B24B21/06 ,  H01L21/304 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/304 ,  B24B9/065 ,  B24B21/002 ,  B24B21/06 ,  H01L21/321 ,  Y10S134/902

摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.

公开(公告)号：USRE36328E

公开(公告)日：1999-10-05

申请号：US915608

申请日：1997-08-21

申请人： Naoto Miyashita ,  Koichi Takahashi ,  Hiroshi Kinoshita

发明人： Naoto Miyashita ,  Koichi Takahashi ,  Hiroshi Kinoshita

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67115

摘要： A semiconductor manufacturing apparatus includes a furnace having a tubular body with inner and outer tubular members. A boat having wafers mounted thereon is positioned inside the inner tubular member. Temperature control inside the tubular body is provided by a thermocouple device located between the inner and outer tubular members. A mixture of dichlorosilane gas and ammonium gas formed by a mixing nozzle at a temperature which is lower than the temperature in the tubular body is supplied to the wafers from positions juxtaposed with the wafers mounted on the boat.

摘要翻译： 半导体制造装置包括具有带有内管状构件和外管状构件的管状体的炉。 具有安装在其上的晶片的船定位在内管状构件的内部。 管状体内的温度控制由位于内管状构件和外管状构件之间的热电偶装置提供。 在低于管状体温度的混合喷嘴形成的二氯硅烷气体和铵气体的混合物从与安装在船上的晶片并置的位置供应到晶片。

公开(公告)号：US5589421A

公开(公告)日：1996-12-31

申请号：US300067

申请日：1994-09-01

申请人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama ,  Shinji Nunotani ,  Satoshi Yanagiya ,  Yoshiro Baba

发明人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama ,  Shinji Nunotani ,  Satoshi Yanagiya ,  Yoshiro Baba

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/54 ,  C30B25/10 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31 ,  H01L21/331 ,  H01L29/73 ,  H01L21/302 ,  H01L21/463

CPC分类号： H01L21/67115 ,  C23C16/44 ,  C23C16/54 ,  C30B25/10 ,  Y10S438/906

摘要： A chemical vapor deposition apparatus comprises a reaction chamber for annealing a silicon wafer, a transportation mechanism for transporting the silicon wafer to the reaction chamber, a detecting device for detecting temperature of the reaction chamber, and an operation control device for receiving signals corresponding to the temperature of the reaction chamber, and supplying to the transportation mechanism, other signals for preventing the silicon wafer from being transported when the temperature is 100.degree. C. or more.

摘要翻译： 化学气相沉积装置包括用于退火硅晶片的反应室，用于将硅晶片输送到反应室的输送机构，用于检测反应室温度的检测装置，以及用于接收对应于该反应室的信号的操作控制装置 反应室的温度，并向输送机构供给在温度为100℃以上时防止硅晶片输送的其他信号。