公开(公告)号：US06783658B2

公开(公告)日：2004-08-31

申请号：US10261949

申请日：2002-10-02

申请人： Yoshitaka Matsui ,  Hiroshi Kosukegawa ,  Masako Kodera ,  Naoto Miyashita

发明人： Yoshitaka Matsui ,  Hiroshi Kosukegawa ,  Masako Kodera ,  Naoto Miyashita

IPC分类号： B23H1100

CPC分类号： C25F3/00 ,  H01L21/32115

摘要： A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm2 upon application of a voltage of +2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.

摘要翻译： 通过在阳极电极和对电极之间施加电压同时使阳极电极与靶材料的表面接触来对目标材料进行电抛光。 在电化学测量中，在0.1M高氯酸溶液内施加+ 2.5V的电压与银/氯化银电极相比，阳极电极由电流密度不高于10mA / cm 2的电极材料形成 使用恒电位仪

公开(公告)号：US07101259B2

公开(公告)日：2006-09-05

申请号：US10694047

申请日：2003-10-28

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

IPC分类号： B24B49/00 ,  B24B51/00 ,  H01L21/00 ,  B24B1/00

CPC分类号： B24B37/345

摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

公开(公告)号：US06667238B1

公开(公告)日：2003-12-23

申请号：US09545504

申请日：2000-04-07

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

IPC分类号： H01L2100

CPC分类号： B24B37/345

摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

摘要翻译： 抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。 抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部， 被抛光 清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

公开(公告)号：US07727891B2

公开(公告)日：2010-06-01

申请号：US11074774

申请日：2005-03-09

申请人： Yoshitaka Matsui ,  Masako Kodera

发明人： Yoshitaka Matsui ,  Masako Kodera

IPC分类号： H01L21/461

CPC分类号： H01L21/02071 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76883

摘要： A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

摘要翻译： 一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自 由Ti，W和Cu和Al组成的组在其表面上暴露于半导体衬底上方，并将溶解有氢的氢溶解溶液供给到结构的表面。

公开(公告)号：US20050148176A1

公开(公告)日：2005-07-07

申请号：US11074774

申请日：2005-03-09

申请人： Yoshitaka Matsui ,  Masako Kodera

发明人： Yoshitaka Matsui ,  Masako Kodera

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/02071 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76883

摘要： A method of manufacturing a semiconductor device, comprising the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor. substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

摘要翻译： 一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自 由Ti，W和Cu和Al组成的组在其表面上暴露于半导体之上。 并且将溶解氢气的氢溶解溶液供给到该结构体的表面。

公开(公告)号：US06992009B2

公开(公告)日：2006-01-31

申请号：US10237786

申请日：2002-09-10

申请人： Masako Kodera ,  Yoshitaka Matsui

发明人： Masako Kodera ,  Yoshitaka Matsui

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： Provided is a method of manufacturing a semiconductor device, comprising preparing a base comprising a semiconductor substrate having a device surface side, a p-type semiconductor layer formed on the device surface side of the semiconductor substrate, a n-type semiconductor layer which is formed on the device surface side of the semiconductor substrate and forms a p-n junction together with the p-type semiconductor layer, and wirings formed above the semiconductor substrate and electrically connected to each other via the p-n junction, applying a chemical solution containing electrolytes to a device surface of the base, the wirings being exposed at the device surface of the base, and applying a liquid selected from the group consisting of anode water, oxidizing gas-dissolved water, radical-containing water, cathode water, reducing gas-dissolved water and an organic substance-adding solution to the device surface of the base.

公开(公告)号：US06903015B2

公开(公告)日：2005-06-07

申请号：US10384565

申请日：2003-03-11

申请人： Yoshitaka Matsui ,  Masako Kodera

发明人： Yoshitaka Matsui ,  Masako Kodera

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/02071 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76883

摘要： A method of manufacturing a semiconductor device, comprising the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

摘要翻译： 一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自 由Ti，W和Cu和Al组成的组在其表面上暴露于半导体衬底上方，并将溶解有氢的氢溶解溶液供给到结构的表面。

公开(公告)号：US20130115774A1

公开(公告)日：2013-05-09

申请号：US13422969

申请日：2012-03-16

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： H01L21/3105 ,  C23F1/08 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/31055 ,  H01L21/67011

摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

摘要翻译： 根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。 在使二氧化硅的状态下，使凹凸部的溶解率降低，使得在不规则的凸部接触的区域改变处理液的平衡状态，使凸部的溶解率大于凹凸部的凹部的溶解率 使具有不规则性的膜与处理液接触。

公开(公告)号：US20070254558A1

公开(公告)日：2007-11-01

申请号：US11661141

申请日：2005-08-26

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B24B37/04 ,  H01L21/00

CPC分类号： H01L21/6708 ,  B24B37/005 ,  B24B37/042 ,  B24B37/046 ,  B24B49/006 ,  B24B57/02

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US20070173056A1

公开(公告)日：2007-07-26

申请号：US11652505

申请日：2007-01-12

申请人： Masako Kodera

发明人： Masako Kodera

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  C25F3/02 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684

摘要： A method for fabricating a semiconductor device includes forming a barrier metal film on a substrate with an opening defined therein, forming a copper-containing film on said barrier metal film after having formed said barrier metal film on a surface of said substrate and an inner wall of said opening, and polishing said copper-containing film and said barrier metal film while applying a voltage to said substrate in a state that said copper-containing film and said barrier metal film are exposed.

摘要翻译： 一种制造半导体器件的方法包括：在其上限定有开口的基板上形成阻挡金属膜，在所述基板的表面上形成所述阻挡金属膜之后，在所述阻挡金属膜上形成含铜膜， 并且在所述含铜膜和所述阻挡金属膜露出的状态下对所述基板施加电压，并且对所述含铜膜和所述阻挡金属膜进行抛光。