摘要:
A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material
摘要:
Improved via-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multilayer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.
摘要:
A radio frequency (RF) transponder (RF tag) is proposed, where a high dielectric constant material is used in operative cooperation with a tag antenna so that the distance of the tag antenna from conducting or absorbing surfaces may be reduced, and so the tag dimensions may be reduced.
摘要:
This invention relates to a method for improving the chemical and electrical performance characteristics of a high dielectric constant material. The method comprises the steps of first obtaining a barium containing high dielectric constant material, the material having an upper surface and then modifying the surface chemistry of said upper surface by interacting said upper surface with a gas reactant in a closed environment. In a variant of the method, the gas reactant preferentially reacting with upper surface as compared to the bulk.
摘要:
Improved vie-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multi-layer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.
摘要:
A method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material.
摘要:
An unsintered aluminum nitride body including:(a) 1 to 5 weight percent of a vitreous solid of boria, alumina, and calcia in the proportions of (1) boria between 3 and 25 weight percent, (2) alumina between 10 and 50 weight percent, and (3) calcia between 40 and 80 weight percent; and(b) aluminum nitride powder as the balance of the aluminum nitride body.The invention further relates to a method of forming the unsintered aluminum nitride body and then sintering it at a temperature between 1550 and 1650 degrees Centrigrade so as to form a dense, thermally conductive aluminum nitride body.
摘要:
An unsintered aluminum nitride body including:(a) 1 to 5 weight percent of a vitreous solid of boria, alumina, and calcia in the proportions of (1) boria between 3 and 25 weight percent, (2) alumina between 10 and 50 weight percent, and (3) calcia between 40 and 80 weight percent; and(b) aluminum nitride powder as the balance of the aluminum nitride body.