公开(公告)号：US5283104A

公开(公告)日：1994-02-01

申请号：US672272

申请日：1991-03-20

申请人： Farid Y. Aoude ,  Emanuel I. Cooper ,  Peter R. Duncombe ,  Shaji Farooq ,  Edward A. Giess ,  Young-Ho Kim ,  Sarah H. Knickerbocker ,  Friedel Muller-Landau ,  Mark O. Neisser ,  Jae M. Park ,  Robert R. Shaw ,  Robert A. Rita ,  Thomas M. Shaw ,  Rao Vallabhaneni ,  Jon A. Van Hise ,  George F. Walker ,  Jungihl Kim ,  James M. Brownlow, deceased

发明人： Farid Y. Aoude ,  Emanuel I. Cooper ,  Peter R. Duncombe ,  Shaji Farooq ,  Edward A. Giess ,  Young-Ho Kim ,  Sarah H. Knickerbocker ,  Friedel Muller-Landau ,  Mark O. Neisser ,  Jae M. Park ,  Robert R. Shaw ,  Robert A. Rita ,  Thomas M. Shaw ,  Rao Vallabhaneni ,  Jon A. Van Hise ,  George F. Walker ,  Jungihl Kim ,  James M. Brownlow, deceased

IPC分类号： H01B1/16 ,  H01L21/48 ,  H01L23/498 ,  H05K1/03 ,  H05K1/09 ,  H05K3/46 ,  B32B9/00

CPC分类号： H05K1/092 ,  H01B1/16 ,  H01L21/486 ,  H01L21/4867 ,  H01L23/49883 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T428/12472 ,  Y10T428/12556 ,  Y10T428/12604 ,  Y10T428/12611 ,  Y10T428/24322 ,  Y10T428/24802 ,  Y10T428/25 ,  Y10T428/251 ,  Y10T428/252 ,  Y10T428/2982 ,  Y10T428/2991

摘要： Improved via-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multilayer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.

摘要翻译： 用于在电路化陶瓷衬底，特别是多层衬底中产生导电通孔的改进的通孔填充组合物，不会破裂和/或失去气密密封。 通孔填充组合物包含含有（a）在约0.5和6（my）m之间的基本均匀直径的陶瓷和/或玻璃球的混合物的浆料，（b）具有最大尺寸或直径在 约为陶瓷和/或玻璃球直径的1/3和1/4，和（c）粘合剂载体。 形成的导电通孔体包括致密地包裹在共烧结陶瓷和/或玻璃球的均匀基质内的烧结金属颗粒的均匀导电骨架网络，该基质被气密地融合并与形成通孔壁的陶瓷层成一体 陶瓷电路基板。

公开(公告)号：US5337475A

公开(公告)日：1994-08-16

申请号：US992091

申请日：1992-12-17

申请人： Farid Y. Aoude ,  Emanuel I. Cooper ,  Peter R. Duncombe ,  Shaji Farooq ,  Edward A. Giess ,  Young-Ho Kim ,  Sarah H. Knickerbocker ,  Friedel Muller-Landau ,  Mark O. Neisser ,  Jae M. Park ,  Robert R. Shaw ,  Robert A. Rita ,  Thomas M. Shaw ,  Rao Vallabhaneni ,  Jon A. Van Hise ,  George F. Walker ,  Jungihl Kim ,  James M. Brownlow, deceased

发明人： Farid Y. Aoude ,  Emanuel I. Cooper ,  Peter R. Duncombe ,  Shaji Farooq ,  Edward A. Giess ,  Young-Ho Kim ,  Sarah H. Knickerbocker ,  Friedel Muller-Landau ,  Mark O. Neisser ,  Jae M. Park ,  Robert R. Shaw ,  Robert A. Rita ,  Thomas M. Shaw ,  Rao Vallabhaneni ,  Jon A. Van Hise ,  George F. Walker ,  Jungihl Kim ,  James M. Brownlow, deceased

IPC分类号： H01B1/16 ,  H01L21/48 ,  H01L23/498 ,  H05K1/03 ,  H05K1/09 ,  H05K3/46 ,  H01K3/10

CPC分类号： H05K1/092 ,  H01B1/16 ,  H01L21/486 ,  H01L21/4867 ,  H01L23/49883 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T428/12472 ,  Y10T428/12556 ,  Y10T428/12604 ,  Y10T428/12611 ,  Y10T428/24322 ,  Y10T428/24802 ,  Y10T428/25 ,  Y10T428/251 ,  Y10T428/252 ,  Y10T428/2982 ,  Y10T428/2991

摘要： Improved vie-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multi-layer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.

摘要翻译： 用于在电路化陶瓷衬底，特别是多层衬底中产生导电通孔的改进的充填组合物，而不会破裂和/或损失气密密封。 通孔填充组合物包含含有（a）在约0.5至6μm之间具有基本均匀直径的陶瓷和/或玻璃球的混合物的浆料，（b）具有约1至约6μm的最大尺寸或直径的导电金属颗粒或球体 / 3和1/4的陶瓷和/或玻璃球的直径，和（c）粘合剂载体。 形成的导电通孔体包括致密地包裹在共烧结陶瓷和/或玻璃球的均匀基质内的烧结金属颗粒的均匀导电骨架网络，该基质被气密地融合并与形成通孔壁的陶瓷层成一体 陶瓷电路基板。

公开(公告)号：US5545429A

公开(公告)日：1996-08-13

申请号：US270086

申请日：1994-07-01

申请人： Richard B. Booth ,  Emanuel I. Cooper ,  Edward A. Giess ,  Mark R. Kordus ,  Sol Krongelb ,  Steven P. Ostrander ,  Judith M. Roldan ,  Carlos J. Sambucetti ,  Ravi Saraf

发明人： Richard B. Booth ,  Emanuel I. Cooper ,  Edward A. Giess ,  Mark R. Kordus ,  Sol Krongelb ,  Steven P. Ostrander ,  Judith M. Roldan ,  Carlos J. Sambucetti ,  Ravi Saraf

IPC分类号： H05K3/20 ,  H05K3/32 ,  H05K3/42 ,  B05D5/12 ,  C25D5/02

CPC分类号： H05K3/423 ,  H05K2203/0152 ,  H05K2203/0733 ,  H05K2203/1509 ,  H05K3/205 ,  H05K3/321

摘要： The present invention is directed to a process of a method for the full metallization of thru-holes in a polymer structure comprising the steps of applying a film-forming amount of a conductive polymer-metal composite paste to a metal cathode; bonding a patterned polymer structure to said paste; subjecting said polymer structure to an electrolytic plating bath for a time sufficient to fully metallize thru-hole surfaces in said patterned polymer structure and removing the structure from the cathode assembly. The fully metallized thru-hole polymer structure can then be cleaned and polished to produce a finished product.

摘要翻译： 本发明涉及一种在聚合物结构中贯穿孔的全金属化方法的方法，包括以下步骤：向金属阴极施加成膜量的导电聚合物 - 金属复合浆料; 将图案化的聚合物结构键合到所述糊料; 使所述聚合物结构经受电解电镀浴足够的时间以完全金属化所述图案化的聚合物结构中的通孔表面，并从阴极组件中去除结构。 完全金属化的通孔聚合物结构然后可以被清洁和抛光以产生成品。

公开(公告)号：US4540621A

公开(公告)日：1985-09-10

申请号：US518588

申请日：1983-07-29

申请人： Carl L. Eggerding ,  Edward A. Giess

发明人： Carl L. Eggerding ,  Edward A. Giess

IPC分类号： C04B35/195 ,  C04B35/634 ,  H01L21/48 ,  H01L23/15 ,  H05K1/03 ,  H05K3/46 ,  H05K3/30 ,  H05K3/00

CPC分类号： C04B35/63416 ,  C04B35/195 ,  C04B35/634 ,  C04B35/6342 ,  H01L21/4807 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  Y10T428/24917

摘要： A method for forming a substrate for electronic applications having a dielectric constant of less than 6 is disclosed. The method comprises admixing crystalline cordierite particles having a size of 0.1--10 microns with a binder and solvent, casting the same into a sheet, drying the cast sheet into a self-supporting green sheet and then heating the green sheet to burn out the binder and to sinter the particles together. A metallization pattern is deposited on the green sheet after the casting but before the heating, the metallization pattern being molybdenum or tungsten. The cordierite has a defined coefficient of thermal expansion. A dielectric substrate for mounting of integrated circuit devices thereon is also disclosed.

摘要翻译： 公开了一种形成介电常数小于6的电子应用基板的方法。 该方法包括将具有0.1-10微米尺寸的结晶堇青石颗粒与粘合剂和溶剂混合，将其浇注到片材中，将流延片材干燥成自支撑生片，然后加热生片以烧尽粘合剂 并将颗粒烧结在一起。 金属化图案在铸造之后但在加热之前沉积在生片上，金属化图案是钼或钨。 堇青石具有确定的热膨胀系数。 还公开了用于在其上安装集成电路器件的电介质基片。

公开(公告)号：US4962086A

公开(公告)日：1990-10-09

申请号：US204066

申请日：1988-06-08

申请人： William J. Gallagher ,  Edward A. Giess ,  Aranava Gupta ,  Robert B. Laibowitz ,  Eugene J. O'Sullivan ,  Robert L. Sandstrom

发明人： William J. Gallagher ,  Edward A. Giess ,  Aranava Gupta ,  Robert B. Laibowitz ,  Eugene J. O'Sullivan ,  Robert L. Sandstrom

IPC分类号： C01G3/00 ,  C01B13/14 ,  C01G1/00 ,  C04B41/89 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/14 ,  H01L39/22 ,  H01L39/24 ,  H01P3/08

CPC分类号： H01P3/085 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/143 ,  H01L39/2458 ,  H01L39/247 ,  Y10S428/901 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/704 ,  Y10T29/49014

摘要： High T.sub.c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T.sub.c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.