RETUNING OF FERROELECTRIC MEDIA BUILT-IN-BIAS
    2.
    发明申请
    RETUNING OF FERROELECTRIC MEDIA BUILT-IN-BIAS 审中-公开
    电磁介质中的偏转

    公开(公告)号:US20100085863A1

    公开(公告)日:2010-04-08

    申请号:US12260045

    申请日:2008-10-28

    IPC分类号: G11B9/00

    CPC分类号: G11B9/02

    摘要: Provided herein are embodiments for adjusting a built-in bias of a media including a conductive layer and a ferroelectric layer above the conductive layer. In certain embodiments, a voltage signal is applied between the conductive layer of the media and an electrode (provided over at least a portion of the ferroelectric layer) to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. In other embodiments, the temperature of the at least a portion of the ferroelectric layer of the media is elevated to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. The desired built-in bias can be a zero built-in bias, or a non-zero built-in bias.

    摘要翻译: 本文提供了用于调整介质的内置偏压的实施例,该介质包括在导电层上方的导电层和铁电层。 在某些实施例中,电压信号被施加在介质的导电层和电极(设置在铁电层的至少一部分之间),从而调节内置偏置,使得内置偏压沿着方向 (即,朝向)所需的内在偏见。 在其他实施例中,介质的铁电层的至少一部分的温度升高,从而调节内置偏压,使得内置偏压沿着(即,朝向)所需内置的方向移动, 偏见。 所需的内置偏置可以是零内置偏置或非零内置偏置。

    Mechanism to prevent actuation charging in microelectromechanical actuators
    3.
    发明授权
    Mechanism to prevent actuation charging in microelectromechanical actuators 有权
    防止微机电致动器致动充电的机构

    公开(公告)号:US07214995B2

    公开(公告)日:2007-05-08

    申请号:US10955153

    申请日:2004-09-30

    IPC分类号: H01L29/82

    CPC分类号: H01H59/0009 H01H2059/0018

    摘要: According to one embodiment a microelectromechanical (MEMS) switch is disclosed. The MEMS switch includes a top movable electrode, and an actutaion electrode with an undoped polysilicon stopper region to contact the top movable electrode when an actuation current is applied. The undoped polysilicon stopper region prevents actuation charging that accumulates over time in a unipolar actuation condition.

    摘要翻译: 根据一个实施例,公开了一种微机电(MEMS)开关。 MEMS开关包括顶部可动电极和具有未掺杂多晶硅停留区域的活性电极,以在施加致动电流时接触顶部可动电极。 未掺杂的多晶硅停止区域防止在单极致动条件下随时间累积的致动充电。

    METHOD OF IMPROVING STABILITY OF DOMAIN POLARIZATION IN FERROELECTRIC THIN FILMS
    5.
    发明申请
    METHOD OF IMPROVING STABILITY OF DOMAIN POLARIZATION IN FERROELECTRIC THIN FILMS 审中-公开
    改善电磁薄膜中极域极化稳定性的方法

    公开(公告)号:US20090213492A1

    公开(公告)日:2009-08-27

    申请号:US12035989

    申请日:2008-02-22

    申请人: Quan A. Tran

    发明人: Quan A. Tran

    IPC分类号: G11B5/127

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: A memory device comprises a ferroelectric media comprising at least one ferroelectric film. The ferroelectric film has an as-grown spontaneous polarization of a first direction. A tip is position over the ferroelectric film and a first voltage is applied to the tip larger than a switching voltage of the ferroelectric film. One or both of the tip and the ferroelectric media is moved to form a first domain having a spontaneous polarization of opposite the first direction. The tip is then positioned over the first domain and a second voltage to the tip smaller than the first voltage to form a second domain smaller than the first domain and having a polarization of the first direction, the second domain defining the bit.

    摘要翻译: 存储器件包括包含至少一个铁电膜的铁电介质。 铁电薄膜具有第一方向的自发极化。 尖端位于铁电体膜上方,并且第一电压施加到比铁电体膜的开关电压大的尖端。 移动尖端和铁电介质中的一个或两个以形成具有与第一方向相反的自发极化的第一区域。 然后将尖端定位在第一区域上方,并且尖端的第二电压小于第一电压,以形成小于第一区域的第二区域,并具有第一方向的极化,第二区域限定位。

    METHOD AND SYSTEM FOR IMPROVING DOMAIN FORMATION IN A FERROELECTRIC MEDIA AND FOR IMPROVING TIP LIFETIME
    6.
    发明申请
    METHOD AND SYSTEM FOR IMPROVING DOMAIN FORMATION IN A FERROELECTRIC MEDIA AND FOR IMPROVING TIP LIFETIME 审中-公开
    改进电磁介质中的域形成和改进提示寿命的方法和系统

    公开(公告)号:US20090129247A1

    公开(公告)日:2009-05-21

    申请号:US12269817

    申请日:2008-11-12

    IPC分类号: G11B9/00

    摘要: An information storage device comprises a ferroelectric media, write circuitry to provide a first signal and a second signal to the ferroelectric media, a tip platform and a cantilever operably associated with the tip platform. A tip extends from the cantilever toward the ferroelectric media and includes a first conductive material communicating the first signal from the write circuitry to the ferroelectric media and a second conductive material communicating the second signal from the write circuitry to the ferroelectric media. A insulating material arranged between the first conductive material and the second conductive material to electrically isolate the first conductive material from the second conductive material.

    摘要翻译: 信息存储装置包括铁电介质,用于向铁电介质提供第一信号和第二信号的写入电路,与尖端平台可操作地相关联的尖端平台和悬臂。 尖端从悬臂向铁电介质延伸并且包括将来自写入电路的第一信号传递到铁电介质的第一导电材料和将来自写入电路的第二信号传递到铁电介质的第二导电材料。 布置在第一导电材料和第二导电材料之间以将第一导电材料与第二导电材料电隔离的绝缘材料。