摘要:
Some mechanical, electrical, and thermal properties of high Tc superconductors such as (Ba, Y) cuprates can be substantially improved by the dispersal of an appropriate metal in the superconductive body. For instance, mixing Ag particles with superconductive powder of nominal composition Ba2YCu3O7 and processing the mixture in the conventional manner can produce superconductive bodies having Tc of about 93 K and substantially greater fracture strength and normal state electrical and thermal conductivity than otherwise identical bodies that do not contain Ag particles.
摘要:
The invention is embodied in a soft magnetic thin film article comprising an iron--chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron--chromium--nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C.). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要:
A thin film inductive element according to this invention comprises an elongate conductor, and spaced apart magnetic strips that substantially surround the conductor, with dielectric material between the magnetic strips and the conductor. The inductive element can have relatively high inductance and low loss, can be used in linear form, meander on spiral form, or any other desired form, is suitable for use at RF frequencies, and can be integrated with conventional circuitry. Criteria for choosing the length of the magnetic strips and the thickness of the dielectric are disclosed.
摘要:
A class of superconductive materials containing copper-oxygen bonding and with mixed cation-occupancy designed with a view to size and valence consideration yield useful values of critical temperature and other properties. Uses entail all applications which involves superconducting materials such as magnets and transmission lines which require continuous superconductivity paths as well as detectors (e.g., which may rely on tunneling).
摘要:
The specification describes silicon MOS devices with gate dielectrics having the composition Ta.sub.1-x Al.sub.x O.sub.y, where x is 0.03-0.7 and y is 1.5-3, Ta.sub.1-x Si.sub.x O.sub.y, where x is 0.05-0.15, and y is 1.5-3, and Ta.sub.1-x-z Al.sub.x Si.sub.z O.sub.y, where 0.7>x+z>0.05, z
摘要:
A thin dielectric film that uses an amorphous composition of R--Sn--Ti--O as the main component is disclosed, wherein R is Zr or Hf, having particular application for use in a capacitor of a DRAM cell. The preferable range of the dielectric thin film composition is centered around Zr.sub.x Sn.sub.y Ti.sub.z O.sub.w, where 0.1.ltoreq.x.ltoreq.1.8; 0.1.ltoreq.y.ltoreq.1.6; 0.2.ltoreq.z.ltoreq.1.9; and 2.0.ltoreq.w.ltoreq.4.0; and x+y+z=2. Preferably, x is about 0.2, y is about 0.2, and z is about 0.6. Doping of the composition with nitrogen is further disclosed as improving the dielectric properties and uniformity of the film.
摘要翻译:公开了使用R-Sn-Ti-O的非晶质组合物作为主要成分的薄电介质膜,其中R是Zr或Hf,其特别适用于DRAM电池的电容器。 电介质薄膜组合物的优选范围以Zr x Sn y Ti z O w为中心,其中0.1≤x≤1.8; 0.1 = y = 1.6; 0.2 = z 1.9; 和2.0 = w = 4.0; x + y + z = 2。 优选地,x为约0.2,y为约0.2,z为约0.6。 进一步公开了用氮掺杂组合物以提高膜的介电性能和均匀性。
摘要:
The device has a single strip having a first end, a second end, a length and a width. The first end of the strip is curved toward the second end of the strip to form a loop having a height. The length is approximately 10 mm, the width is approximately 5-8 mm, and the height is approximately 0.8-1.2 mm. The loop is preferably fabricated from copper. The loop is mounted directly to a test instrument such as a computer controlled impedance analyzer or network analyzer. The test instrument measures the inductance and resistance of the loop with no thin film sample placed therein, and then measures the inductance and resistance of the loop containing the sample under test. From these measurements, the device ultimately derives the permeability of the sample under test. The method for measuring the complex permeability of thin films at ultra-high frequencies includes the steps of recording the residual inductance and resistance for the loop empty; measuring the total inductance and resistance for the loop loaded with the sample under test; determining the change in resistance by subtracting the resistance of the loop without any sample from the resistance when the loop is loaded with the sample under test; determining the change in inductance by subtracting the inductance of the loop without any sample from the inductance when the loop is loaded with the sample under test; and calculating permeability.
摘要:
A class of superconductive materials containing copper-oxygen bonding and with mixed cation-occupancy designed with a view to size and valence consideration yield useful values of critical temperature and other properties. Uses entail all applications which involves superconducting materials such as magnets and transmission lines which require continuous superconductivity paths as well as detectors (e.g., which may rely on tunneling).
摘要:
Superconducting copper oxides of the perovskite structure are modified to have mixed occupancy of a cation site, thereby resulting in increased limits in critical field and/or critical current. Mixed occupancy may be observed in terms of increased resistivity as the superconducting material reverts to a nonsuperconducting state. A significant advantage, at least for preferred compositions, derives from the fact that critical temperature is unaffected relative to the prototypical material.
摘要:
A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 .mu.coulomb/cm.sup.2. In a currently preferred embodiment, the dielectric layer has composition Ta.sub.1-y Al.sub.y O.sub.x N.sub.z, with y.about.0.1, x.about.2.4, and z.about.0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.
摘要翻译:基本上由Ta,Al,氧和氮组成的电介质层可以具有使这种层用于薄膜电容器(通常用于Si集成电路的电容器)的有利特性。 例如,根据本发明的电容器比现有技术的钽氧化物电容器显着更大的部分可以存储3ul库仑/ cm 2的电荷。 在当前优选的实施例中,电介质层具有组成Ta1-yAlyOxNz,其中y DIFFERENCE 0.1,x差异2.4和z差值0.02。 介电层可以通过溅射沉积或任何其它合适的沉积技术形成,例如化学气相沉积。