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30 条记录 (耗时 0.046 秒)

    Solidifying layer for wafer cleaning
    1.
    发明授权
    Solidifying layer for wafer cleaning 有权
    晶圆清洗固化层

    公开(公告)号：US07503977B1

    公开(公告)日：2009-03-17

    申请号：US11237190

    申请日：2005-09-27

    申请人： Robert J. O'Donnell ,  Thomas W. Anderson

    发明人： Robert J. O'Donnell ,  Thomas W. Anderson

    IPC分类号： B05B7/06 ,  B05B5/00 ,  B05C11/10

    CPC分类号： H01L21/6715 ,  H01L21/67115

    摘要： A substrate preparation system includes a proximity head configured to be positioned near a surface of the substrate to deliver a solution to the surface of the substrate. The proximity head includes a plurality of inlets for delivering the solution and a plurality of outlets for removing a portion of the solution from the surface of the substrate. The surface of the substrate maintains a remaining portion of the solution as a coherent film after the proximity head is scanned over the surface of the substrate. The coherent film is configured to be cured. The remaining portion of the solution acts on the surface of the substrate and binds particulates present on the surface of the substrate as the coherent film cures.

    摘要翻译： 衬底制备系统包括被配置为定位在衬底的表面附近以将溶液输送到衬底的表面的邻近头。 邻近头包括用于输送溶液的多个入口和用于从基底的表面去除溶液的一部分的多个出口。 在将基片的表面上扫描邻近头后，衬底的表面将溶液的剩余部分保持为相干膜。 相干膜被构造成固化。 溶液的剩余部分作用在衬底的表面上，并且当粘结膜固化时，结合存在于衬底表面上的微粒。

    Method and apparatus for simulating standard test wafers
    4.
    发明授权
    Method and apparatus for simulating standard test wafers 有权
    用于模拟标准测试晶片的方法和设备

    公开(公告)号：US07270760B2

    公开(公告)日：2007-09-18

    申请号：US11244335

    申请日：2005-10-04

    申请人： Gregory J. Goldspring ,  Robert J. O'Donnell

    发明人： Gregory J. Goldspring ,  Robert J. O'Donnell

    IPC分类号： H01L21/00

    CPC分类号： G03F7/70616 ,  H01L22/34 ,  Y10S438/926

    摘要： A method and apparatus are provided for simulating a standard wafer in semiconductor manufacturing equipment. The apparatus includes a support layer suitable for being handled by the semiconductor manufacturing equipment. Applied to the support layer is a mixture including a process agent and a material. During use, the present invention simulates a standard production wafer including material similar to that in the mixture of the present invention.

    摘要翻译： 提供了一种用于模拟半导体制造设备中的标准晶片的方法和装置。 该装置包括适于由半导体制造设备处理的支撑层。 应用于载体层是包含加工剂和材料的混合物。 在使用过程中，本发明模拟包括与本发明混合物相似的材料的标准生产晶片。

    Apparatus and method for utilizing a meniscus in substrate processing
    8.
    发明授权
    Apparatus and method for utilizing a meniscus in substrate processing 有权
    在基板处理中利用弯月面的装置和方法

    公开(公告)号：US07093375B2

    公开(公告)日：2006-08-22

    申请号：US10956799

    申请日：2004-09-30

    申请人： Robert J. O'Donnell

    发明人： Robert J. O'Donnell

    IPC分类号： F26B21/06

    CPC分类号： H01L21/67051 ,  B05C5/02 ,  B05C11/1039 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  H01L21/67075 ,  H01L21/6708 ,  Y10S134/902

    摘要： An apparatus for processing a substrate is provided which includes a proximity head proximate to a surface of the substrate when in operation. The apparatus also includes an opening on a surface of the proximity head to a cavity defined in the proximity head where the cavity delivers an active agent to the surface of the substrate through the opening. The apparatus further includes a plurality of conduits on the surface of the proximity head that generates a fluid meniscus on the surface of the substrate surrounding the opening.

    摘要翻译： 提供了一种用于处理衬底的设备，其在操作时包括靠近衬底的表面的接近头。 该装置还包括在邻近头部的表面上的开口，该开口限定在邻近头部中的空腔中，其中空腔通过开口将活性剂输送到基底的表面。 该装置还包括在邻近头部的表面上的多个导管，其在围绕开口的基底的表面上产生流体弯液面。

    Insitu post etch process to remove remaining photoresist and residual sidewall passivation
    9.
    发明授权
    Insitu post etch process to remove remaining photoresist and residual sidewall passivation 失效
    内置后蚀刻工艺，以去除剩余的光致抗蚀剂和剩余的侧壁钝化

    公开(公告)号：US06852636B1

    公开(公告)日：2005-02-08

    申请号：US09472757

    申请日：1999-12-27

    申请人： Robert J. O'Donnell

    发明人： Robert J. O'Donnell

    IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302

    CPC分类号： H01L21/02071 ,  H01L21/02054 ,  H01L21/31138 ,  H01L21/32136

    摘要： A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is energized to form an oxygen plasma. The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation. The oxygen plasma also cleans the etch chamber.

    摘要翻译： 一种用于在单个蚀刻室中执行金属蚀刻，蚀刻掩模剥离和去除剩余侧壁钝化的方法。 将晶片放置在蚀刻室中。 在晶片上执行金属蚀刻。 将诸如氧气和氩气的混合物的汽提气体提供给蚀刻室并被激发以形成氧等离子体。 氧等离子体从晶片剥离蚀刻掩模，并去除剩余的侧壁钝化。 氧等离子体还清洗蚀刻室。

    Low contamination components for semiconductor processing apparatus and methods for making components
    10.
    发明授权
    Low contamination components for semiconductor processing apparatus and methods for making components 有权
    用于半导体处理装置的低污染组分和制造组件的方法

    公开(公告)号：US06780787B2

    公开(公告)日：2004-08-24

    申请号：US10101701

    申请日：2002-03-21

    申请人： Robert J. O'Donnell

    发明人： Robert J. O'Donnell

    IPC分类号： H01L2131

    CPC分类号： H01J37/32495 ,  C23C4/02 ,  C23C4/10 ,  C23C14/564 ,  C23C16/4404 ,  C23C28/00 ,  C23C28/042 ,  C23C28/044 ,  C23C28/322 ,  C23C28/34 ,  C23C28/341 ,  C23C28/345 ,  C23C28/3455 ,  C23C28/347 ,  C23C30/00 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

    摘要： Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.

    摘要翻译： 半导体处理装置的部件至少部分地形成有侵蚀，腐蚀和/或耐腐蚀腐蚀的陶瓷材料。 示例性陶瓷材料可以包括铪，锶，氧化镧和/或镝中的至少一种氧化物，氮化物，硼化物，碳化物和/或氟化物。 陶瓷材料可以作为涂层涂覆在基材上以形成复合材料部件，或者形成单块体。 涂层可以保护基材免受物理和/或化学侵蚀。 陶瓷材料可用于形成半导体加工设备的等离子体暴露部件，以延长使用寿命。