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8 条记录 (耗时 0.017 秒)

    Reactive vapor deposition of multiconstituent material
    3.
    发明授权
    Reactive vapor deposition of multiconstituent material 失效
    多成分材料的反应性气相沉积

    公开(公告)号：US4483725A

    公开(公告)日：1984-11-20

    申请号：US429289

    申请日：1982-09-30

    申请人： Robert P. H. Chang

    发明人： Robert P. H. Chang

    IPC分类号： H01L21/205 ,  C23C14/00 ,  C30B33/00 ,  H01L21/31 ,  C23C11/08

    CPC分类号： C23C14/0021 ,  C30B33/005

    摘要： The low temperature method for depositing multiconstituent material on a substrate uses at least two ballistic particle streams that are caused to intersect in a volume of space proximate to the substrate. One particle stream, the "gas" stream, comprises excited neutral particles, and the other particle stream, the "metal" stream, consists substantially of a particle species capable of chemically reacting with the excited neutrals. The excited neutrals are typically produced in a RF-generated plasma or by means of photon excitation, the source of the metal stream is typically an evaporator or a Knudsen cell. Charged particles can be removed from the gas stream by means of magnetic and/or electric fields, and their removal typically advantageously affects the electrical properties of the deposits. The method has broad applicability, and can be used, for instance, to deposit high quality stoichiometric oxide or nitride films on silicon, germanium, III-V or II-VI semiconductors, metals, or insulators, as well as to deposit doped or layered multiconstituent films. Because deposition can take place at very low substrate temperatures, generally between about 30.degree. C. and 250.degree. C., a patterned deposit can be produced by deposition onto a resist-masked substrate, followed by, removal of the resist by, e.g., lift-off.

    摘要翻译： 用于在基板上沉积多成分材料的低温方法使用至少两个弹道颗粒流，其在靠近基板的空间体积中相交。 一个颗粒流，即“气体”流，包括激发的中性颗粒，而另一个颗粒流，即“金属”流，基本上由能够与所激发的中性物质化学反应的颗粒物质组成。 激发的中性粒子通常在RF产生的等离子体中或通过光子激发产生，金属流源通常是蒸发器或克努森（Knudsen）电池。 带电粒子可以通过磁场和/或电场从气流中除去，并且它们的去除通常有利地影响沉积物的电性能。 该方法具有广泛的适用性，并且可以用于例如在硅，锗，III-V或II-VI半导体，金属或绝缘体上沉积高质量化学计量的氧化物或氮化物膜，以及沉积掺杂或分层 多成像薄膜。 因为沉积可以在非常低的基板温度（通常在约30℃至250℃）之间发生，所以可以通过沉积到抗蚀剂掩模的基板上，然后通过例如， 升空。

    Controlling the properties of native films using selective growth chemistry
    4.
    发明授权
    Controlling the properties of native films using selective growth chemistry 失效
    使用选择性生长化学控制天然薄膜的性质

    公开(公告)号：US4246296A

    公开(公告)日：1981-01-20

    申请号：US12192

    申请日：1979-02-14

    申请人： Robert P. H. Chang

    发明人： Robert P. H. Chang

    IPC分类号： H01L29/78 ,  H01L21/316 ,  H01L21/324 ,  H01L29/94 ,  H01L21/30

    CPC分类号： H01L21/31654 ,  H01L21/3245

    摘要： An improved technique for growing native films on compound semiconductors is disclosed. In this technique, additional preferential chemistry is used in conjunction with prior art growth processes to eliminate what would otherwise be unreacted constituents in the native film. Films grown using this technique display improved electrical properties.

    摘要翻译： 公开了一种用于在化合物半导体上生长天然薄膜的改进技术。 在该技术中，附加的优先化学结合现有技术的生长方法使用，以消除天然膜中否则将是未反应的成分。 使用这种技术生长的薄膜显示改进的电性能。

    Carbon nanostructures and methods of preparation
    5.
    发明授权
    Carbon nanostructures and methods of preparation 失效
    碳纳米结构及其制备方法

    公开(公告)号：US06765949B2

    公开(公告)日：2004-07-20

    申请号：US10231925

    申请日：2002-08-29

    申请人： Robert P. H. Chang

    发明人： Robert P. H. Chang

    IPC分类号： H05B1100

    CPC分类号： B01J19/088 ,  B01J2219/0809 ,  B01J2219/083 ,  B01J2219/0871 ,  B01J2219/0886 ,  B01J2219/0894 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/152 ,  C01B32/16 ,  C01B32/162 ,  C01B32/164 ,  C01B2202/06 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/842 ,  Y10S977/90

    摘要： An electric arc furnace and method for forming tubular carbon nanostructures comprising a first electrode (cathode) and an a second electrode (anode) opposite the first electrode, sources of voltage (V) and current (A) to create charged particles (Ie) and produce an arch between the electrodes, a source of a gas to surround the arc, and a source of carbon precursor positioned adjacent the anode and within the arc, wherein the arc is maintained at a pressure and high temperature for a time sufficient to heat the carbon precursor to form carbon nonotubes upon the anode.

    摘要翻译： 一种用于形成管状碳纳米结构的电弧炉和方法，包括与第一电极相对的第一电极（阴极）和第二电极（阳极），电压源（V）和电流（A）以产生带电粒子（Ie）和 在电极之间产生拱形，围绕电弧的气体源和邻近阳极定位在电弧内的碳前体源，其中电弧保持在压力和高温下足以加热的时间 碳前体在阳极上形成碳无管。

    Hydrogen etching of semiconductors and oxides
    6.
    发明授权
    Hydrogen etching of semiconductors and oxides 失效
    半导体和氧化物的氢蚀刻

    公开(公告)号：US4361461A

    公开(公告)日：1982-11-30

    申请号：US243622

    申请日：1981-03-13

    申请人： Robert P. H. Chang

    发明人： Robert P. H. Chang

    IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

    CPC分类号： H01L21/3065 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/32137

    摘要： Atomic hydrogen, typically produced in a plasma, etches a wide range of materials, including III-V materials and their oxides. GaAs oxide is etched at a faster rate than GaAs, for example, providing significant possibilities for processing integrated circuits and other devices. Silicon is etched preferentially as compared to silicon dioxide or silicon nitride. Native oxides are also conveniently removed by this method prior to other processing steps.

    摘要翻译： 通常在等离子体中生产的原子氢蚀刻宽范围的材料，包括III-V材料及其氧化物。 以比GaAs更快的速度蚀刻GaAs氧化物，例如，为集成电路和其它器件的处理提供了重要的可能性。 与二氧化硅或氮化硅相比，优先蚀刻硅。 在其它处理步骤之前，还可以通过该方法方便地除去天然氧化物。

    Fluorine enhanced plasma growth of native layers on silicon
    7.
    发明授权
    Fluorine enhanced plasma growth of native layers on silicon 失效
    氟增强了硅上天然层的等离子体生长

    公开(公告)号：US4300989A

    公开(公告)日：1981-11-17

    申请号：US81353

    申请日：1979-10-03

    申请人： Robert P. H. Chang

    发明人： Robert P. H. Chang

    IPC分类号： H01L21/316 ,  B05D3/06 ,  C01B33/12

    CPC分类号： H01L21/02238 ,  H01L21/02131 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/31662

    摘要： The plasma growth rate of native layers, such as oxide and nitride, on silicon is enhanced by the addition of fluorine. An increase in growth rate is obtained, and the oxide growth rates on doped and undoped portions of the silicon substrate are substantially the same. The fluorine is typically added by means of a fluorinated compound, typically CF.sub.4, comprising 0.01 to 5 molecular percent of the plasma. Lower substrate temperatures, typically less than 600 degrees C., may be used, resulting in less warpage of the wafer and less diffusion of dopants.

    摘要翻译： 通过添加氟来增强硅上的天然层如氧化物和氮化物的等离子体生长速率。 获得生长速率的增加，并且硅衬底的掺杂和未掺杂部分的氧化物生长速率基本相同。 氟通常通过包含0.01至5分子百分比的等离子体的氟化化合物（通常为CF 4）加入。 可以使用较低的基板温度，通常小于600摄氏度，导致晶片的翘曲变小并且掺杂剂的扩散较少。

    Method of encapsulating a material in a carbon nanotube
    8.
    发明授权
    Method of encapsulating a material in a carbon nanotube 失效
    将材料包封在碳纳米管中的方法

    公开(公告)号：US5916642A

    公开(公告)日：1999-06-29

    申请号：US754545

    申请日：1996-11-21

    申请人： Robert P. H. Chang

    发明人： Robert P. H. Chang

    IPC分类号： C23C14/06 ,  C23C14/14 ,  C23C14/32 ,  D01F9/12 ,  C23C16/30

    CPC分类号： C23C14/0605 ,  B82Y30/00 ,  C23C14/14 ,  C23C14/325 ,  D01F9/12 ,  Y10S977/742 ,  Y10S977/788 ,  Y10S977/842 ,  Y10T29/49915 ,  Y10T29/49936 ,  Y10T29/53791

    摘要： A method of encapsulating a material in a carbon nanotube comprising generating a vapor of the material to be encapsulated, generating a hydrogen arc discharge that discharges encapsulating products, and contacting the vapor of the material and the products discharged from the hydrogen arc discharge proximate a surface to encapsulate the material in a carbon nanotube. A carbon nanotube encapsulating a metallic material (e.g. copper), a semi-conductor material (e.g. germanium) and other materials can be produced.

    摘要翻译： 一种将材料封装在碳纳米管中的方法，包括产生要被封装的材料的蒸汽，产生放电密封产品的氢电弧放电，以及使靠近表面的氢电弧放电的材料和产物的蒸气接触 以将材料包封在碳纳米管中。 可以制造包封金属材料（例如铜），半导体材料（例如锗）和其它材料的碳纳米管。