ELECTROSTATIC CHUCK, METHOD OF MANUFACTURING ELECTROSTATIC CHUCK, AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20250157795A1

    公开(公告)日:2025-05-15

    申请号:US18939613

    申请日:2024-11-07

    Abstract: Disclosed are an electrostatic chuck capable of preventing deformation of a bonding layer and damage to a lift pin, a method of manufacturing the electrostatic chuck, and a plasma processing apparatus. The electrostatic chuck configured to support a substrate and to receive a lift pin so that the lift pin is ascendable and descendable therein includes at least one pin hole formed vertically therethrough to allow the lift pin to ascend and descend along the pin hole, a ceramic puck configured to allow the substrate to be seated thereon, a base plate configured to support the ceramic puck, a bonding layer configured to bond the ceramic puck to the base plate, and an insulating pipe mounted on an inner side wall of the pin hole. The insulating pipe includes an upper insulating pipe bonded to the ceramic puck and a lower insulating pipe adhered to the base plate.

    FILLER MEMBER AND SUBSTRATE TREATING APPARATUS

    公开(公告)号:US20250140577A1

    公开(公告)日:2025-05-01

    申请号:US18926562

    申请日:2024-10-25

    Abstract: Disclosed is a substrate treating apparatus including: a chamber providing a treatment space therein; a substrate support member located inside the chamber and for supporting a substrate; a supply port for supplying a treatment fluid into the treatment space of the chamber; a filler member located between the supply port and the substrate to fill a portion of a volume of the treatment space, in which the filler member has perforations, and the perforations are provided in a collision shape such that treatment fluids passing through the perforations collide each other.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20250132172A1

    公开(公告)日:2025-04-24

    申请号:US18918497

    申请日:2024-10-17

    Abstract: Disclosed is an apparatus for processing a substrate, the apparatus including: a body providing a processing space; a supply line for supplying a drying fluid that removes a treatment fluid on a substrate supported in the processing space; an exhaust line for exhausting an atmosphere of the processing space; and a fluid circulation unit connected with the exhaust line and the supply line, in which the fluid circulation unit includes: a separator for separating the treatment fluid and the drying fluid from a mixed fluid in which the treatment fluid and the drying fluid exhausted from the processing space are mixed; and a liquid reuse line connected to the separator, and for withdrawing, from the separator, the treatment fluid separated from the separator.

    Substrate storing and aligning apparatus in substrate bonding equipment for bonding substrates to each other

    公开(公告)号:US12278130B2

    公开(公告)日:2025-04-15

    申请号:US17562975

    申请日:2021-12-27

    Inventor: Ho Cheon Bang

    Abstract: A substrate storing and aligning apparatus is proposed. The substrate storing and aligning apparatus is capable of efficiently using space in substrate bonding equipment. The substrate storing and aligning apparatus in the substrate bonding equipment for bonding substrates includes a front end buffer including a front end storing slot configured to temporarily store a substrate, and a front end opening configured such that a transfer robot is movable therethrough to transfer the substrate from the front end storing slot, and a front end aligner provided to be stacked on an upper portion of the front end buffer, and configured to rotate the substrate so as to align the substrate.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US12276025B2

    公开(公告)日:2025-04-15

    申请号:US18092169

    申请日:2022-12-30

    Abstract: A substrate processing apparatus includes a processing chamber having a processing space in which a substrate is plasma-processed, and having a transparent window; a gas flow unit supplying and discharging process gas to the processing chamber; and a laser irradiator irradiating a laser for heating the substrate to be selectively atomic layer-processed for each of a plurality of thin films formed on the substrate through the transparent window from an external space of the processing chamber.

    Apparatus for treating substrate and method for treating substrate

    公开(公告)号:US12272544B2

    公开(公告)日:2025-04-08

    申请号:US18145920

    申请日:2022-12-23

    Abstract: Disclosed is a method for treating a substrate in a plurality of chambers. The substrate treating method may include performing liquid treatment on a substrate located in a chamber through a supply line for connecting a circulation line and each of the plurality of chambers while the liquid circulates in the circulation line, wherein a flow rate per unit time of the liquid flowing downstream of a valve provided in the supply line is constantly maintained at a reference flow rate, and controlling an upstream flow rate which is a flow rate per unit time of the liquid flowing upstream of the circulation line rather than the supply lines or a downstream flow rate which is a flow rate per unit time of the liquid flowing downstream of the circulation line rather than the supply lines based on a distribution flow rate which is a flow rate per unit time of the liquid flowing upstream of the valve to maintain the reference flow rate.

    Apparatus and method for processing substrate

    公开(公告)号:US12269057B2

    公开(公告)日:2025-04-08

    申请号:US17946027

    申请日:2022-09-15

    Abstract: An apparatus for processing a substrate is provided. The apparatus includes: a levitation stage transferring a substrate in a first direction and including first areas and second areas, which are arranged in a second direction that is different from the first direction; a plurality of rollers installed in the first areas and transferring the substrate; a plurality of first vacuum holes installed in the first areas and sucking the air at first pressure; and a plurality of second vacuum holes installed in the second areas and sucking the air at second pressure that is different from the first pressure.

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