公开(公告)号：US6036782A

公开(公告)日：2000-03-14

申请号：US166577

申请日：1998-10-06

申请人： Sumi Tanaka ,  Sakae Nakatsuka ,  Mitsuhiro Tachibana

发明人： Sumi Tanaka ,  Sakae Nakatsuka ,  Mitsuhiro Tachibana

IPC分类号： H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01L21/687

摘要： A showerhead for use in a process chamber for performing a predetermined process on an object, designed to apply a prescribed gas in the process chamber. The showerhead comprises a main body, a cover, and a support. The main body has a an internal space into which the gas to be supplied into the process chamber is introduced and an opening which opens to the process chamber. The cover closes the opening of the main body and has a plurality of gas-applying holes for applying the gas from the main body. The support supports the cover to the main body and provides a predetermined clearance between the cover and the main body.

摘要翻译： 一种在处理室中使用的用于对物体进行预定处理的喷头，其被设计成在处理室中施加规定的气体。 喷头包括主体，盖和支撑件。 主体具有内部空间，供给到处理室中的气体被引入到该内部空间中，并且开口通向处理室。 盖封闭主体的开口，并具有多个用于从主体施加气体的气体施加孔。 支撑件支撑主体的盖，并且在盖和主体之间提供预定的间隙。

公开(公告)号：US5972114A

公开(公告)日：1999-10-26

申请号：US610860

申请日：1996-03-05

申请人： Tomihiro Yonenaga ,  Mitsuhiro Tachibana ,  Sumi Tanaka

发明人： Tomihiro Yonenaga ,  Mitsuhiro Tachibana ,  Sumi Tanaka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/45572 ,  C23C16/481

摘要： An anti-adhesion film, which is difficult for the deposited film to adhere thereto, is formed on the inner surface of a process chamber. A process gas is supplied from a gas supply unit to that position in the process chamber which is opposed to a table, whereupon a metal film or metallic compound film is deposited on the surface of the object. In the film deposition process, the anti-adhesion film serves considerably to reduce the build-up of the metal film deposited on the inner surface of the process chamber, especially that surface of the gas supply unit which is opposed to the table. Although at least a maintenance operation such as wet cleaning is necessary, therefore, the frequency of such operation can be lowered substantially, so that the operating efficiency of the apparatus can be improved.

摘要翻译： 在处理室的内表面上形成有难以沉积的膜粘附的防粘附膜。 处理气体从气体供给单元供给到与工作台相对的处理室中的位置，于是金属膜或金属化合物膜沉积在物体的表面上。 在薄膜沉积工艺中，防粘附膜用于显着地减少沉积在处理室内表面上的金属膜的积聚，特别是气体供给单元与表相对的表面。 尽管至少需要诸如湿式清洁的维护操作，但是可以大大降低这种操作的频率，从而可以提高设备的操作效率。

公开(公告)号：US07842229B2

公开(公告)日：2010-11-30

申请号：US11666349

申请日：2005-10-27

申请人： Sumi Tanaka ,  Kouki Suzuki

发明人： Sumi Tanaka ,  Kouki Suzuki

IPC分类号： C21D9/00 ,  C21B3/00

CPC分类号： H01L21/68792 ,  H01L21/67109

摘要： Disclosed is a substrate rotating device improved such that an amount of particle generation is remarkably reduced, and a substrate processing apparatus provided with the substrate rotating device. The substrate rotating device includes a driven rotary member, e.g., a driven ring, connected directly or indirectly to a substrate support member for supporting a substrate; and a driving rotary member, e.g., a drive rotor, that rotates in abutment against the driven rotary member to drive the driven rotary member for rotation. The driven rotary member and the driving rotary member are formed of ceramic materials, whose values of fracture toughness defined by JIS R1607 are different from each other, and/or whose values of three-point bending strength defined by JIS R1601 are different from each other.

摘要翻译： 公开了一种改善了颗粒产生量显着降低的基板旋转装置以及设置有基板旋转装置的基板处理装置。 基板旋转装置包括直接或间接地连接到用于支撑基板的基板支撑构件的从动旋转构件，例如从动环; 以及驱动旋转构件，例如驱动转子，其旋转抵靠从动旋转构件以驱动从动旋转构件旋转。 被驱动的旋转构件和驱动旋转构件由JIS R1607定义的断裂韧度值彼此不同的陶瓷材料形成，和/或由JIS R1601定义的三点弯曲强度的值彼此不同 。

公开(公告)号：US20100038833A1

公开(公告)日：2010-02-18

申请号：US12440034

申请日：2007-08-31

申请人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

发明人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

IPC分类号： H01L21/26 ,  C21D1/74

CPC分类号： H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.

摘要翻译： 提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

公开(公告)号：US06733593B1

公开(公告)日：2004-05-11

申请号：US09646343

申请日：2000-09-18

申请人： Sumi Tanaka ,  Masatake Yoneda

发明人： Sumi Tanaka ,  Masatake Yoneda

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/28556 ,  H01L21/67109 ,  H01L21/68721 ,  H01L21/68735

摘要： A film deposition apparatus of the present invention includes a container forming a processing chamber for processing a target object, a mounting table which is provided in the processing chamber and on which the target object is mounted, a first heating apparatus provided in the mounting table, for heating the target object mounted on the mounting table, a first gas supply section provided in the container, for supplying processing gas into the processing chamber, the processing gas forming a high-melting-point metal-film layer on the target object mounted on the mounting table, a movable clamp for clamping a periphery of the target object and holding the target object on the mounting table, a second heating apparatus formed separately from the clamp, for heating the clamp indirectly, a gas flow path formed between the clamp and the second heating apparatus when the clamp is moved to a position where the clamp clamps the target object, and a second gas supply section for causing backside gas to flow into the gas flow path.

摘要翻译： 本发明的成膜装置包括形成用于处理目标物体的处理室的容器，设置在处理室中并安装有目标物体的安装台，设置在安装台中的第一加热装置， 用于加热安装在安装台上的目标物体，设置在容器中的第一气体供应部分，用于将处理气体供应到处理室中，处理气体在安装在安装台上的目标物体上形成高熔点金属膜层 安装台，用于夹持目标物体的周边并将目标物体保持在安装台上的可移动夹具，与夹具分开形成的用于间接加热夹具的第二加热装置，形成在夹具和 第二加热装置，当夹具移动到夹具夹持目标物体的位置时，第二气体供给部， 气体流入气体流路。

公开(公告)号：US5951772A

公开(公告)日：1999-09-14

申请号：US803008

申请日：1997-02-21

申请人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

发明人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

IPC分类号： C23C8/06 ,  C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45572 ,  C23C8/06 ,  H01L21/67017 ,  H01L21/67103 ,  Y10S156/916 ,  Y10S438/905 ,  Y10S438/935

摘要： A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

摘要翻译： 真空处理装置包括：用于处理目标物体的真空处理室; 处理气体供给源，用于向真空处理室中的目标物体供给进行处理的处理气体; 处理气体供给管，用于将来自处理气体供给源的处理气体供给到真空处理室中; 以及当将处理气体供给到真空处理室时，用于将气体供给管保持在比大气压力更低的压力下的减压阀。

公开(公告)号：US20120118504A1

公开(公告)日：2012-05-17

申请号：US13386572

申请日：2010-07-21

申请人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai ,  Sumi Tanaka

发明人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai ,  Sumi Tanaka

IPC分类号： B44C1/22 ,  C23C16/458 ,  C23C16/52 ,  B25B11/00 ,  B24C3/00

CPC分类号： H01L21/68792

摘要： A processing apparatus for performing a process on an object includes a chamber; a rotary floater for supporting the object on its upper end side; XY rotating attraction bodies provided in the rotary floater at an interval circumferentially; a floating attraction body provided in the rotary floater to extend circumferentially; a floating electromagnet group for floating the rotary floater while adjusting an inclination of the rotary floater by applying a vertically upward acting magnetic attraction to the floating attraction body; an XY rotating electromagnet group for rotating the rotary floater while adjusting a horizontal position of the rotary floater by applying a magnetic attraction force to the XY rotating attraction bodies; a gas supply for supplying a gas into the chamber; a mechanism for performing a process on the object; and an apparatus control unit for controlling an entire operation of the apparatus.

摘要翻译： 用于对物体进行处理的处理装置包括：室; 用于在其上端侧支撑物体的旋转浮子; XY旋转吸引体以周向间隔设置在旋转浮子中; 浮动吸引体，设置在所述旋转浮子中以沿周向延伸; 浮动电磁体组，用于通过向浮动吸引体施加垂直向上作用的磁吸引力来调节旋转浮子的倾斜度而浮动旋转浮子; XY旋转电磁体组，用于通过向XY旋转吸引体施加磁力来调节旋转浮子的水平位置来旋转旋转浮筒; 用于将气体供应到所述室中的气体供应源; 用于对物体执行处理的机构; 以及用于控制装置的整个操作的装置控制单元。

公开(公告)号：US20080042328A1

公开(公告)日：2008-02-21

申请号：US11666349

申请日：2005-10-27

申请人： Sumi Tanaka ,  Kouki Suzuki

发明人： Sumi Tanaka ,  Kouki Suzuki

IPC分类号： C21D9/00 ,  C21B3/00

CPC分类号： H01L21/68792 ,  H01L21/67109

摘要： Disclosed is a substrate rotating device improved such that an amount of particle generation is remarkably reduced, and a substrate processing apparatus provided with the substrate rotating device. The substrate rotating device includes a driven rotary member, e.g., a driven ring, connected directly or indirectly to a substrate support member for supporting a substrate; and a driving rotary member, e.g., a drive rotor, that rotates in abutment against the driven rotary member to drive the driven rotary member for rotation. The driven rotary member and the driving rotary member are formed of ceramic materials, whose values of fracture toughness defined by JIS R1607 are different from each other, and/or whose values of three-point bending strength defined by JIS R1601 are different from each other.

摘要翻译： 公开了一种改善了颗粒产生量显着降低的基板旋转装置以及设置有基板旋转装置的基板处理装置。 基板旋转装置包括直接或间接地连接到用于支撑基板的基板支撑构件的从动旋转构件，例如从动环; 以及驱动旋转构件，例如驱动转子，其旋转抵靠从动旋转构件以驱动从动旋转构件旋转。 被驱动的旋转构件和驱动旋转构件由JIS R1607定义的断裂韧度值彼此不同的陶瓷材料形成，和/或由JIS R1601定义的三点弯曲强度的值彼此不同 。

公开(公告)号：US07250094B2

公开(公告)日：2007-07-31

申请号：US11350766

申请日：2006-02-10

申请人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

发明人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

IPC分类号： H01L21/306 ,  F27B5/14

CPC分类号： H01L21/67017 ,  C23C16/45521 ,  C23C16/4584 ,  H01L21/67115

摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.

摘要翻译： 防止处理气体进入放置台下方的空间。 用于支撑放置台的下表面的支撑表面设置在支撑柱的上端的内周部。 在支撑柱的上端的中间圆周部分中，在支撑表面的外侧形成周向延伸的吹扫气体槽。 在吹扫气体槽的外部，在对应于支撑柱的上端的外周部的位置处设置窄流路。 吹扫气体在吹扫气体槽中沿圆周方向扩散，并从窄流路流出到外部。 吹扫气体的这种流动防止了处理气体进入吹扫气体槽和放置台下方的空间。

公开(公告)号：US20050051520A1

公开(公告)日：2005-03-10

申请号：US10886572

申请日：2004-07-09

申请人： Sumi Tanaka

发明人： Sumi Tanaka

IPC分类号： H01L21/00 ,  H01L21/687 ,  B23K10/00 ,  F27B5/14

CPC分类号： H01L21/68792 ,  H01J37/3244 ,  H01J37/32733 ,  H01L21/67069

摘要： A plasma processing apparatus 100 used to execute a specific type of processing such as plasma processing on a workpiece by supplying a processing gas into a chamber 110 while applying high-frequency power to generate plasma includes a stage 108 on which the workpiece is placed and a stage supporting unit 124 that holds the stage 108. Bellows 120 and 122 are disposed above and below the stage supporting unit 124 to support the stage 108 in a horizontal state relative to the chamber 110. Thus, a plasma processing apparatus that does not allow the workpiece stage to become tilted, affords ease of maintenance and is capable of stable processing is provided. In addition, the internal spaces at the bellows 120 and 122 are used as an exhausting pipe to achieve efficient and uniform exhaustion of the chamber 110.

摘要翻译： 等离子体处理装置100，用于通过向处理室110内供给处理气体而对工件进行等离子体处理等特定处理，同时施加高频电力来产生等离子体，其中包括载置工件的载物台108和 波导管120和122设置在平台支撑单元124的上方和下方，以相对于室110在水平状态下支撑台架108.因此，等离子体处理装置不允许 工件台倾斜，提供易于维护并且能够提供稳定的加工。 此外，波纹管120和122处的内部空间用作排气管，以实现腔室110的有效和均匀的排气。