公开(公告)号：US10367070B2

公开(公告)日：2019-07-30

申请号：US15754804

申请日：2015-09-24

申请人： Intel Corporation ,  Patrick Morrow ,  Mauro J. Kobrinsky ,  Kimin Jun ,  Il-Seok Son ,  Paul B. Fischer

发明人： Patrick Morrow ,  Mauro J. Kobrinsky ,  Kimin Jun ,  Il-Seok Son ,  Paul B. Fischer

IPC分类号： H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/417 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/528 ,  H01L27/088 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L21/84 ,  H01L27/12 ,  H01L21/265 ,  H01L21/306 ,  H01L21/324

摘要： Methods and structures formed thereby are described, of forming self-aligned contact structures for microelectronic devices. An embodiment includes forming a trench in a source/drain region of a transistor device disposed in a device layer, wherein the device layer is on a substrate, forming a fill material in the trench, forming a source/drain material on the fill material, forming a first source/drain contact on a first side of the source/drain material, and then forming a second source drain contact on a second side of the source/drain material.

公开(公告)号：US20140170394A1

公开(公告)日：2014-06-19

申请号：US14237402

申请日：2012-08-16

申请人： Seung Baik Nam ,  Jeong Ho Jeong ,  Jong Seok Son

发明人： Seung Baik Nam ,  Jeong Ho Jeong ,  Jong Seok Son

IPC分类号： C08G64/42 ,  C08K3/26 ,  C08K3/22 ,  C08K5/11

CPC分类号： C08G64/42 ,  B32B27/12 ,  B32B27/16 ,  B32B27/18 ,  B32B27/20 ,  B32B27/22 ,  B32B27/26 ,  B32B27/36 ,  B32B2260/046 ,  B32B2262/101 ,  B32B2307/7163 ,  B32B2419/00 ,  C08J5/18 ,  C08J2367/04 ,  C08K3/22 ,  C08K3/26 ,  C08K5/0016 ,  C08K5/09 ,  C08K5/11 ,  C08K5/14 ,  C08K5/235 ,  Y10T428/24868 ,  C08L67/04

摘要： Disclosed is an environmentally-friendly sheet using a PLA resin. The environmentally-friendly sheet using the PLA resin according to the present invention comprises: a back layer; a printed layer which is formed on the upper part of the back layer, wherein a printing pattern is formed on the upper surface thereof; and a transparent layer formed on the upper part of the printed layer, wherein one or more of the back layer, the printed layer, and the transparent layer have a PLA (polylactic acid) resin.

摘要翻译： 公开了使用PLA树脂的环保片材。 根据本发明的使用PLA树脂的环保片材包括：背层; 印刷层，其形成在所述背层的上部，其中，印刷图案形成在所述背面的上表面上; 以及形成在印刷层的上部的透明层，其中背层，印刷层和透明层中的一个或多个具有PLA（聚乳酸）树脂。

公开(公告)号：US08586979B2

公开(公告)日：2013-11-19

申请号：US12320701

申请日：2009-02-02

申请人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

发明人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648

摘要： An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

公开(公告)号：US08411745B2

公开(公告)日：2013-04-02

申请号：US12669770

申请日：2008-07-18

申请人： Euee-Seon Jang ,  Sun-Young Lee ,  Gi-Seok Son ,  Chung-Ku Lee

发明人： Euee-Seon Jang ,  Sun-Young Lee ,  Gi-Seok Son ,  Chung-Ku Lee

IPC分类号： H04N7/32

CPC分类号： H04N19/517 ,  H04N19/102 ,  H04N19/13 ,  H04N19/176 ,  H04N19/182 ,  H04N19/184 ,  H04N19/20 ,  H04N19/46 ,  H04N19/61

摘要： Disclosed are a method and an apparatus of encoding/decoding by using a bit precision. In accordance to an aspect of the present invention, it is possible to encoding and decoding an image or a video by using a bit precision. Accordingly, compression efficiency can be improved and the decoding complexity can be reduced by encoding/decoding video data by use of the bit precision.

摘要翻译： 公开了通过使用位精度进行编码/解码的方法和装置。 根据本发明的一个方面，可以通过使用比特精度对图像或视频进行编码和解码。 因此，可以通过使用位精度对视频数据进行编码/解码，可以提高压缩效率并且可以降低解码复杂度。

公开(公告)号：US08330916B2

公开(公告)日：2012-12-11

申请号：US12344075

申请日：2008-12-24

申请人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Sang Kim ,  Kyung-Seok Son ,  Chang-Oh Jeong

发明人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Sang Kim ,  Kyung-Seok Son ,  Chang-Oh Jeong

IPC分类号： G02F1/1343

CPC分类号： H01L33/0095 ,  G02F1/133512 ,  G02F1/133516 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133397 ,  G02F2001/136222 ,  G02F2001/136231 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

摘要： A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.

摘要翻译： 液晶显示器（LCD）包括薄膜晶体管（TFT），每个薄膜晶体管具有间隔开的源/漏电极和设置在源/漏电极之间和之间的氧化物型半导体膜，以限定有源层。 源/漏电极中的每一个包括细分透明导电层的一部分，其中透明导电层的一个细分从其源极/漏极之一内延伸，以限定光学曝光的像素电极，其可靠地与 一个源/漏电极。 由于可以使用较少数量的光刻掩模来形成TFT，所以可以降低批量生产成本并提高生产可靠性。

公开(公告)号：US08263978B2

公开(公告)日：2012-09-11

申请号：US12453295

申请日：2009-05-06

申请人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20120127162A1

公开(公告)日：2012-05-24

申请号：US13228578

申请日：2011-09-09

申请人： Bong-Im PARK ,  Jun-Pyo LEE ,  Ik-Huyn AHN ,  Ho-Seok SON ,  Kang-Min KIM ,  Jung-Won KIM ,  Seon-Ki KIM

发明人： Bong-Im PARK ,  Jun-Pyo LEE ,  Ik-Huyn AHN ,  Ho-Seok SON ,  Kang-Min KIM ,  Jung-Won KIM ,  Seon-Ki KIM

IPC分类号： G06T15/00

CPC分类号： H04N13/341 ,  H04N13/122 ,  H04N13/398

摘要： A method for displaying a stereoscopic image, the method comprises generating k images for a left eye and k images for a right eye based on a left-eye image and a right-eye image, where ‘k’ is a natural number greater than two, correcting an image currently received using an n-th image of the k images for the left eye and the k images for the right eye that are previously received, where ‘n’ is a natural number greater than ‘k’, displaying corrected k images for the left eye and corrected k images for the right eye on a display panel, and providing the display panel with lights based on the image displayed on the display panel.

摘要翻译： 一种用于显示立体图像的方法，所述方法包括基于左眼图像和右眼图像生成左眼的k个图像和用于右眼的k个图像，其中'k'是大于2的自然数 使用先前接收的用于左眼的k个图像的第n个图像和用于右眼的k个图像来正确接收的图像，其中'n'是大于'k'的自然数，显示校正的k 用于左眼的图像和用于右眼的校正的k图像在显示面板上，并且基于显示面板上显示的图像向显示面板提供灯。

公开(公告)号：US08153267B2

公开(公告)日：2012-04-10

申请号：US12073497

申请日：2008-03-06

申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Jung Seok Hahn ,  Kyung Seok Son ,  Eun Kyung Lee

发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Jung Seok Hahn ,  Kyung Seok Son ,  Eun Kyung Lee

IPC分类号： B32B9/04

CPC分类号： C09D4/06 ,  C08G77/58 ,  C08K5/5425 ,  C08L21/00 ,  C08L83/04 ,  C09D183/04 ,  C09D183/14 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31663 ,  C08L2666/02 ,  C08L2666/52

摘要： Disclosed are a composition including a silane-based organic/inorganic hybrid material having a multiple bond and one or more organic metal compounds and/or one or more organic polymers, an organic insulator including the composition, an organic thin film transistor (OTFT) including the organic insulator and an electronic device including the OTFT. The organic insulator including the composition for preparing an organic insulator has increased charge mobility and an increased on/off current ratio, thus exhibiting improved properties, and the organic thin film transistor manifests uniform properties due to the absence of hysteresis.

摘要翻译： 公开了包含具有多重键的硅烷类有机/无机混合材料和一种或多种有机金属化合物和/或一种或多种有机聚合物，包含该组合物的有机绝缘体，有机薄膜晶体管（OTFT） 有机绝缘体和包括OTFT的电子设备。 包括用于制备有机绝缘体的组合物的有机绝缘体具有增加的电荷迁移率和增加的导通/截止电流比，从而表现出改进的性能，并且由于没有滞后，有机薄膜晶体管表现出均匀的性能。

公开(公告)号：US08102476B2

公开(公告)日：2012-01-24

申请号：US12153657

申请日：2008-05-22

申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC分类号： G02F1/1333

CPC分类号： G02F1/136213 ,  G02F2203/01

摘要： A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.

摘要翻译： 提供了包括氧化物半导体薄膜晶体管的显示装置。 显示装置包括至少一个薄膜晶体管和至少一个存储电容器。 存储电容器包括由透明氧化物半导体形成的存储电极和存储电极之上的像素电极。 像素电极可以与存储电极分离所需的距离。

公开(公告)号：US07943985B2

公开(公告)日：2011-05-17

申请号：US12219661

申请日：2008-07-25

申请人： Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631

摘要： Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.

摘要翻译： 提供氧化物半导体薄膜晶体管（TFT）及其制造方法。 所述方法包括在衬底上形成沟道层，在沟道层的相对侧形成源极和漏极，并且通过将氧化材料与沟道层的表面相接触来氧化沟道层的表面， 通道层的表面。 由于氧化剂处理通道层的表面，可以更有效地控制天然产生的过量载体或制造过程中产生的过量载体。