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1.发明授权Methods for forming group III-nitride materials and structures formed by such methods 有权通过这种方法形成III族氮化物材料和结构的方法公开(公告)号：US09412580B2
公开(公告)日：2016-08-09
申请号：US13988996
申请日：2011-11-23
CPC分类号： H01L21/02104 , C30B25/02 , C30B29/403 , C30B29/406 , H01L29/2003
摘要： Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.
摘要翻译： 本发明的实施方案包括使用卤化物气相外延（HVPE）方法形成III族氮化物半导体结构的方法。 所述方法包括在非天然生长衬底的表面上形成连续的III族氮化物成核层，所述连续III族氮化物成核层隐藏非天然生长衬底的上表面。 形成连续的III族氮化物成核层可以包括形成III族氮化物层并热处理所述III族氮化物层。 方法还可以包括在连续的III族氮化物成核层上形成另外的III族氮化物层。
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2.发明申请METHODS FOR FORMING GROUP III-NITRIDE MATERIALS AND STRUCTURES FORMED BY SUCH METHODS 有权形成III类氮化物材料的方法和通过这些方法形成的结构公开(公告)号：US20130234157A1
公开(公告)日：2013-09-12
申请号：US13988996
申请日：2011-11-23
CPC分类号： H01L21/02104 , C30B25/02 , C30B29/403 , C30B29/406 , H01L29/2003
摘要： Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.
摘要翻译： 本发明的实施方案包括使用卤化物气相外延（HVPE）方法形成III族氮化物半导体结构的方法。 所述方法包括在非天然生长衬底的表面上形成连续的III族氮化物成核层，所述连续III族氮化物成核层隐藏非天然生长衬底的上表面。 形成连续的III族氮化物成核层可以包括形成III族氮化物层并热处理所述III族氮化物层。 方法还可以包括在连续的III族氮化物成核层上形成另外的III族氮化物层。
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公开(公告)号：US08574968B2
公开(公告)日：2013-11-05
申请号：US12180418
申请日：2008-07-25
申请人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, Jr. , Ed Lindow , Subhash Mahajan , Ranjan Datta , Rahul Ajay Trivedi , Ilsu Han
发明人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, Jr. , Ed Lindow , Subhash Mahajan , Ranjan Datta , Rahul Ajay Trivedi , Ilsu Han
IPC分类号： H01L21/82
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02647
摘要： This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.
摘要翻译： 本发明提供了用于制造具有低缺陷密度且任选地具有所选晶体极性的III族氮化物半导体材料的基本上连续的层的方法。 所述方法包括在不规则地布置在模板结构上的III族氮化物材料的多个柱/岛的上部上的外延生长成核和/或接种。 岛的上部具有低缺陷密度，并且可选地具有选定的晶体极性。 本发明还包括具有基本连续的掩模材料层的模板结构，通过该掩模材料出现柱/岛的上部。 本发明还包括这样的模板结构。 本发明可以应用于宽范围的半导体材料，包括元素半导体，例如Si（硅）与应变Si（sSi）和/或Ge（锗）的组合，以及化合物半导体，例如II-VI族和 III-V族化合物半导体材料。
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4.发明授权Template layers for heteroepitaxial deposition of III-nitride semiconductor materials using HVPE processes 有权使用HVPE工艺的III族氮化物半导体材料的异质外延沉积的模板层公开(公告)号：US09076666B2
公开(公告)日：2015-07-07
申请号：US13989004
申请日：2011-11-23
CPC分类号： H01L29/0665 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02667
摘要： Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semi-conductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate. The islands of epitaxial nucleation material may be grown and coalesced in a coalescence HVPE process stage to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional III-nitride semiconductor material may be deposited over the nucleation template layer of the epitaxial nucleation material in an additional HVPE process stage. Final and intermediate structures comprising III-nitride semiconductor material are formed by such methods.
摘要翻译： 在衬底上沉积III族氮化物半导体材料的方法包括在成核HVPE工艺阶段中在衬底的表面上沉积III族氮化物半导体材料层，以形成具有包含至少一些非晶III族氮化物 半导体材料。 成核层可以退火以在衬底的表面上形成外延成核材料的晶体岛。 外延成核材料岛可以在聚结HVPE工艺阶段中生长和聚结，以形成外延成核材料的成核模板层。 成核模板层可以至少基本上覆盖基材的表面。 另外的III族氮化物半导体材料可以在另外的HVPE工艺阶段中沉积在外延成核材料的成核模板层上。 通过这种方法形成包含III族氮化物半导体材料的最终和中间结构。
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5.发明申请TEMPLATE LAYERS FOR HETEROEPITAXIAL DEPOSITION OF III NITRIDE SEMICONDUCTOR MATERIALS USING HVPE PROCESSES 有权使用HVPE工艺的III型氮化物半导体材料的异相沉积的模板层公开(公告)号：US20140217553A1
公开(公告)日：2014-08-07
申请号：US13989004
申请日：2011-11-23
CPC分类号： H01L29/0665 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02667
摘要： Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semiconductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate. The islands of epitaxial nucleation material may be grown and coalesced in a coalescence HVPE process stage to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional III-nitride semiconductor material may be deposited over the nucleation template layer of the epitaxial nucleation material in an additional HVPE process stage. Final and intermediate structures comprising III-nitride semiconductor material are formed by such methods.
摘要翻译： 在衬底上沉积III族氮化物半导体材料的方法包括在成核HVPE工艺阶段中在衬底的表面上沉积III族氮化物半导体材料层，以形成具有包含至少一些非晶III族氮化物半导体材料的微结构的成核层 。 成核层可以退火以在衬底的表面上形成外延成核材料的晶体岛。 外延成核材料岛可以在聚结HVPE工艺阶段中生长和聚结，以形成外延成核材料的成核模板层。 成核模板层可以至少基本上覆盖基材的表面。 另外的III族氮化物半导体材料可以在另外的HVPE工艺阶段中沉积在外延成核材料的成核模板层上。 通过这种方法形成包含III族氮化物半导体材料的最终和中间结构。
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6.发明申请公开(公告)号：US20100258053A1
公开(公告)日：2010-10-14
申请号：US12747969
申请日：2008-12-05
申请人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow , Dennis L. Goodwin
发明人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow , Dennis L. Goodwin
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46 , C23C16/455
CPC分类号： C30B25/14 , C23C16/4557 , C23C16/45574 , C23C16/45578 , Y10T137/8593
摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.
摘要翻译： 本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。 改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击生长衬底并且具有足以用于高体积制造的体积。 重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。 本发明对于许多元素和化合物半导体的高体积生长是有用的，并且特别适用于III-V族化合物和GaN的高体积生长。
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公开(公告)号：US08388755B2
公开(公告)日：2013-03-05
申请号：US12261796
申请日：2008-10-30
IPC分类号： C23C16/455 , C23C16/46 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/448 , C30B25/105
摘要： The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.
摘要翻译： 本发明涉及半导体处理领域，并提供通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的装置和方法。 在优选的实施方案中，本发明包括传热结构及其在CVD反应器内的排列，以促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明包括放射吸收表面，用于拦截来自加热灯的辐射并将其转移到流动的工艺气体。
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公开(公告)号：US20090214785A1
公开(公告)日：2009-08-27
申请号：US12261796
申请日：2008-10-30
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/448 , C30B25/105
摘要： The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.
摘要翻译： 本发明涉及半导体处理领域，并提供通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的装置和方法。 在优选的实施方案中，本发明包括传热结构及其在CVD反应器内的排列，以促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明包括放射吸收表面，用于拦截来自加热灯的辐射并将其转移到流动的工艺气体。
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9.发明授权公开(公告)号：US09175419B2
公开(公告)日：2015-11-03
申请号：US12747969
申请日：2008-12-05
申请人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, Jr. , Ed Lindow , Dennis L. Goodwin
发明人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, Jr. , Ed Lindow , Dennis L. Goodwin
IPC分类号： C23C16/00 , C30B25/14 , C23C16/455
CPC分类号： C30B25/14 , C23C16/4557 , C23C16/45574 , C23C16/45578 , Y10T137/8593
摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that are spatially separated from each other up until they impinge on a growth substrate and that have volumes adequate for high-volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chambers without hindering the operation of mechanical and robot substrate-handling equipment used with such chambers. This invention is useful for the high-volume growth of numerous elemental and compound semiconductors, and particularly useful for the high-volume growth of Group III-V compounds and GaN.
摘要翻译： 本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。 改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击到生长衬底上并且具有足以用于大批量制造的体积。 重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。 本发明对于许多元素和化合物半导体的高容量生长是有用的，并且特别适用于III-V族化合物和GaN的大量生长。
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10.发明申请DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS 审中-公开在所需位置具有通道门的沉积系统及相关方法公开(公告)号：US20130052806A1
公开(公告)日：2013-02-28
申请号：US13591718
申请日：2012-08-22
IPC分类号： C23C16/458 , B23P11/00 , H01L21/20
CPC分类号： C30B25/14 , C23C16/303 , C23C16/45504 , C23C16/4557 , C23C16/54 , C30B29/40 , C30B29/406 , H01L21/02538 , H01L21/0254 , H01L21/0262 , Y10T137/0402
摘要： Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.
摘要翻译： 沉积系统包括反应室和至少部分地设置在反应室内的基板支撑结构。 该系统还包括至少一个气体注入装置和至少一个真空装置，它们一起用于使工艺气体流过反应室。 该系统还包括至少一个进入门，工件基底可通过该入口门装载到反应室中并从反应室中卸载。 至少一个进入门位于远离气体注入装置的位置。 可以使用这种沉积系统进行半导体材料的沉积方法。 制造这种沉积系统的方法可以包括在远离气体注入装置的位置处将进入门连接到反应室。
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