公开(公告)号：US20110284863A1

公开(公告)日：2011-11-24

申请号：US13069900

申请日：2011-03-23

申请人： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

发明人： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/0262

摘要： Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

摘要翻译： 本发明的实施例涉及制造半导体结构的方法以及通过这些方法制造的半导体结构。 在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。 通过使用不同的生长条件生长子层来制造半导体层，以改善所得层的均匀性，改善所得层的表面粗糙度和/或使层能够生长到增加的厚度而不发生 的应变松弛。

公开(公告)号：US20130126896A1

公开(公告)日：2013-05-23

申请号：US13738406

申请日：2013-01-10

申请人： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

发明人： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/0262

摘要： Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

摘要翻译： 本发明的实施例涉及制造半导体结构的方法以及通过这些方法制造的半导体结构。 在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。 通过使用不同的生长条件生长子层来制造半导体层，以改善所得层的均匀性，改善所得层的表面粗糙度和/或使层能够生长到增加的厚度而不发生 的应变松弛。

公开(公告)号：US08377802B2

公开(公告)日：2013-02-19

申请号：US13069900

申请日：2011-03-23

申请人： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

发明人： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

IPC分类号： H01L21/20

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/0262

摘要： Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

公开(公告)号：US20130052333A1

公开(公告)日：2013-02-28

申请号：US13327302

申请日：2011-12-15

申请人： Ed Lindow ,  Ronald Bertram ,  Claudio Canizares

发明人： Ed Lindow ,  Ronald Bertram ,  Claudio Canizares

IPC分类号： C23C16/52 ,  B23Q3/00

CPC分类号： C23C16/301 ,  C23C16/46 ,  C23C16/52 ,  C30B25/08 ,  C30B25/16 ,  C30B29/40 ,  H01L21/67115 ,  H01L21/67248 ,  Y10T29/49895

摘要： Deposition systems include a reaction chamber, at least one thermal radiation emitter for heating matter within the reaction chamber, and at least one metrology device for detecting and/or measuring a characteristic of a workpiece substrate in situ within the reaction chamber. One or more chamber walls may be transparent to the thermal radiation and to radiation signals to be received by the metrology device, so as to allow the radiation to pass into and out from the reaction chamber, respectively. At least one volume of opaque material is located to shield a sensor of the metrology device from at least some of the thermal radiation. Methods of forming a deposition system include providing such a volume of opaque material at a location shielding the sensor from the thermal radiation. Methods of using a deposition system include shielding the sensor from at least some of the thermal radiation.

摘要翻译： 沉积系统包括反应室，用于在反应室内加热物质的至少一个热辐射发射器，以及用于在反应室内原位检测和/或测量工件基板的特性的至少一个计量装置。 一个或多个室壁对于热辐射以及由测量装置接收的辐射信号可以是透明的，以便允许辐射分别进入和离开反应室。 定位至少一个体积的不透明材料以将计量装置的传感器与至少一些热辐射隔离。 形成沉积系统的方法包括在屏蔽传感器免受热辐射的位置提供这样的体积不透明材料。 使用沉积系统的方法包括将传感器与至少一些热辐射隔离。

公开(公告)号：US20060234504A1

公开(公告)日：2006-10-19

申请号：US11343264

申请日：2006-01-30

申请人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Weeks

发明人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Weeks

IPC分类号： H01L21/44

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

摘要翻译： 化学气相沉积方法使用丙硅烷和含卤素蚀刻剂源（例如氯）在混合基底的选定区域上选择性沉积含Si膜。 掺杂源可以与丙硅烷和蚀刻剂源混合以选择性沉积掺杂的含Si薄膜。 选择性沉积方法可用于各种应用，例如半导体制造。

公开(公告)号：US20080026149A1

公开(公告)日：2008-01-31

申请号：US11753370

申请日：2007-05-24

申请人： Pierre Tomasini ,  Chantal Arena ,  Matthias Bauer ,  Nyles Cody ,  Ronald Bertram ,  Jianqing Wen ,  Matthew Stephens

发明人： Pierre Tomasini ,  Chantal Arena ,  Matthias Bauer ,  Nyles Cody ,  Ronald Bertram ,  Jianqing Wen ,  Matthew Stephens

IPC分类号： C23C16/00

CPC分类号： H01L21/28518 ,  C23C16/04 ,  C23C16/24 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

摘要： Chloropolysilanes are utilized in methods and systems for selectively depositing thin films useful for the fabrication of various devices such as microelectronic and/or microelectromechanical systems (MEMS).

摘要翻译： 氯多硅烷用于选择性沉积薄膜的方法和系统中，薄膜可用于制造诸如微电子和/或微机电系统（MEMS）的各种装置。

公开(公告)号：US07816236B2

公开(公告)日：2010-10-19

申请号：US11343264

申请日：2006-01-30

申请人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Doran Weeks

发明人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Doran Weeks

IPC分类号： H01L21/20

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

摘要翻译： 化学气相沉积方法使用丙硅烷和含卤素蚀刻剂源（例如氯）在混合基底的选定区域上选择性沉积含Si膜。 掺杂源可以与丙硅烷和蚀刻剂源混合以选择性沉积掺杂的含Si薄膜。 选择性沉积方法可用于各种应用，例如半导体制造。

公开(公告)号：US20060213820A1

公开(公告)日：2006-09-28

申请号：US11088339

申请日：2005-03-23

申请人： Ronald Bertram ,  Douglas Scott

发明人： Ronald Bertram ,  Douglas Scott

IPC分类号： B01D35/14

CPC分类号： B08B7/0021

摘要： A method and apparatus for removing contaminants from a fluid are disclosed. The fluid is introduced into a decontamination chamber such that the fluid is cooled and contaminants fall out within the decontamination chamber, producing a purified fluid. The purified fluid is then retrieved and can be used in a supercritical processing system.

公开(公告)号：US20060226117A1

公开(公告)日：2006-10-12

申请号：US11093536

申请日：2005-03-29

申请人： Ronald Bertram ,  Joseph Hillman ,  Maximilan Biberger

发明人： Ronald Bertram ,  Joseph Hillman ,  Maximilan Biberger

IPC分类号： C03C25/68 ,  G01L21/30 ,  H01L21/306

CPC分类号： H01L21/02101 ,  G03F7/427 ,  H01L21/02057 ,  H01L21/67109 ,  H01L21/67248

摘要： A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

摘要翻译： 公开了一种使用耦合到处于超临界状态的处理室的预注射组件来调节二氧化碳的方法和装置。 该方法和装置利用用于向预注射组件提供超临界二氧化碳的源和用于将预喷射区域保持在超临界温度和压力的温度控制元件。