Abstract:
A semiconductor module, a socket for the same, and a semiconductor module/socket assembly are disclosed. The semiconductor module includes a printed circuit board including a plurality of semiconductor devices, a plurality of insulating layers and a plurality of metal layers, the plurality of insulating layers and the plurality of metal layers are alternately stacked. Exposed portions of the metal layers are exposed to the outside of the semiconductor module at a first and a second ends of the printed circuit board. The first end and the second end are at opposite ends of the printed circuit board.
Abstract:
A semiconductor packaging device is provided. Semiconductor package groups, a side retainer wall, and a filling layer may be located on a base plate. The side retainer wall may be located around the semiconductor package groups. The filling layer may be located between the side retainer wall and the semiconductor package groups.
Abstract:
Example embodiments relate to a semiconductor package. The semiconductor package may include a mounting substrate, a semiconductor chip mounted to the mounting substrate, at least one passive component passing therethrough and mounted to the mounting substrate, and a cover covering the mounting substrate, the semiconductor chip and the at least one passive component.
Abstract:
A semiconductor packaging device is provided. Semiconductor package groups, a side retainer wall, and a filling layer may be located on a base plate. The side retainer wall may be located around the semiconductor package groups. The filling layer may be located between the side retainer wall and the semiconductor package groups.
Abstract:
An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.
Abstract:
A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.
Abstract:
A field emission display (FED) with an integrated triode structure is provided. The FED can be manufactured without using a complex packaging process and have a significantly reduced well diameter and a significantly reduced cathode-to-anode distance. In the FED, front and rear panels form a single body using an anode insulating layer as an intermediate. A method for manufacturing the FED using anodic oxidation is also provided.
Abstract:
A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.
Abstract:
An apparatus for repairing a semiconductor module including: a heating block comprising a thermal contact surface for contacting a defective semiconductor package mounted on a substrate of the semiconductor module to heat the defective semiconductor package using a conduction method and to melt a solder of the defective semiconductor package, and a vacuum adsorption line for adsorbing the defective semiconductor package and separating the defective semiconductor package from the substrate; and a heater installed in the heating block.
Abstract:
An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.