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    Structures with three dimensional nanofences comprising single crystal segments
    3.
    发明授权
    Structures with three dimensional nanofences comprising single crystal segments 有权
    具有包含单晶片段的三维纳米结构的结构

    公开(公告)号：US08518526B2

    公开(公告)日：2013-08-27

    申请号：US12711309

    申请日：2010-02-24

    申请人： Amit Goyal ,  Sung-Hun Wee

    发明人： Amit Goyal ,  Sung-Hun Wee

    IPC分类号： D02G3/00

    CPC分类号： D02G3/00 ,  C30B11/12 ,  C30B29/16 ,  C30B29/605 ,  H01L39/2422 ,  H01L39/2454 ,  H01M4/0428 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1391 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/505 ,  H01M4/525 ,  Y10T428/2481 ,  Y10T428/249921 ,  Y10T428/2913 ,  Y10T428/298

    摘要： An article includes a substrate having a surface and a nanofence supported by the surface. The nanofence includes a multiplicity of primary nanorods and branch nanorods, each of the primary nanorods being attached to said substrate, and each of the branch nanorods being attached to a primary nanorods and/or another branch nanorod. The primary and branch nanorods are arranged in a three-dimensional, interconnected, interpenetrating, grid-like network defining interstices within the nanofence. The article further includes an enveloping layer supported by the nanofence, disposed in the interstices, and forming a coating on the primary and branch nanorods. The enveloping layer has a different composition from that of the nanofence and includes a radial p-n single junction solar cell photovoltaic material and/or a radial p-n multiple junction solar cell photovoltaic material.

    摘要翻译： 一种制品包括具有由表面支撑的表面和纳米的衬底。 纳米级包括多个初级纳米棒和分支纳米棒，每个初级纳米棒连接到所述衬底，并且每个分支纳米棒附着到初级纳米棒和/或另一个分支纳米棒。 主和分支纳米棒被布置在三维，互连的互穿网格状网络中，在网络内定义间隙。 该制品还包括由纳米阵列支撑的包封层，设置在间隙中，并在主和分支纳米棒上形成涂层。 包络层具有与纳米组成不同的组成，并且包括径向p-n单结太阳能电池光伏材料和/或径向p-n多结太阳能电池光伏材料。

    Buffer layers for REBCO films for use in superconducting devices
    4.
    发明授权
    Buffer layers for REBCO films for use in superconducting devices 有权
    用于超导设备的REBCO薄膜的缓冲层

    公开(公告)号：US08748349B2

    公开(公告)日：2014-06-10

    申请号：US13088179

    申请日：2011-04-15

    申请人： Amit Goyal ,  Sung-Hun Wee

    发明人： Amit Goyal ,  Sung-Hun Wee

    IPC分类号： H01B12/00 ,  H01L39/24 ,  H01L39/12

    CPC分类号： H01B12/00 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2461 ,  Y10T428/24355

    摘要： A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

    摘要翻译： 超导制品包括具有双轴纹理表面的基底。 可以是盖层的双轴纹理化缓冲层由衬底支撑。 缓冲层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的过渡金属阳离子。 沉积双轴纹理的超导体层以便被缓冲层支撑。 还公开了制造超导制品的方法。

    BUFFER LAYERS FOR REBCO FILMS FOR USE IN SUPERCONDUCTING DEVICES
    7.
    发明申请
    BUFFER LAYERS FOR REBCO FILMS FOR USE IN SUPERCONDUCTING DEVICES 有权
    用于超级电容器的REBCO膜的缓冲层

    公开(公告)号：US20120264612A1

    公开(公告)日：2012-10-18

    申请号：US13088179

    申请日：2011-04-15

    申请人： Amit Goyal ,  Sung-Hun Wee

    发明人： Amit Goyal ,  Sung-Hun Wee

    IPC分类号： H01L39/12 ,  H01L39/24 ,  H01L39/02 ,  B05D5/12

    CPC分类号： H01B12/00 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2461 ,  Y10T428/24355

    摘要： A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

    摘要翻译： 超导制品包括具有双轴纹理表面的基底。 可以是盖层的双轴纹理化缓冲层由衬底支撑。 缓冲层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的过渡金属阳离子。 沉积双轴纹理的超导体层以便被缓冲层支撑。 还公开了制造超导制品的方法。

    CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)TaO6 IN REBCO FILMS
    8.
    发明申请
    CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)TaO6 IN REBCO FILMS 审中-公开
    纳米级Ba2（Y，RE）TaO6在REBCO膜中的临界电流密度增强

    公开(公告)号：US20110034338A1

    公开(公告)日：2011-02-10

    申请号：US12850521

    申请日：2010-08-04

    申请人： Amit Goyal ,  Claudia Cantoni ,  Eliot Specht ,  Sung-Hun Wee

    发明人： Amit Goyal ,  Claudia Cantoni ,  Eliot Specht ,  Sung-Hun Wee

    IPC分类号： H01L39/00 ,  H01L39/24 ,  B32B9/00 ,  B05D5/12 ,  C23C14/34

    CPC分类号： H01L39/126 ,  H01L39/2448 ,  H01L39/2483 ,  Y10T428/24132 ,  Y10T428/258

    摘要： A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RETaO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RETaO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RETaO6 defects are also disclosed.

    摘要翻译： 超导制品包括具有双轴纹理化表面的基底和由基底支撑的外延双轴纹理超导薄膜。 外延超导膜包括Ba2RETaO6的颗粒，其特征在于在77K处的自激的临界电流密度高于1MA / cm 2。 在一个实施方案中，颗粒被组装成柱。 Ba2RETaO6缺陷的颗粒和纳米柱增强磁通钉扎，导致超导膜的临界电流密度提高。 还公开了制备具有Ba2RETaO6缺陷的超导膜的方法。

    Structures with Three Dimensional Nanofences Comprising Single Crystal Segments
    9.
    发明申请
    Structures with Three Dimensional Nanofences Comprising Single Crystal Segments 有权
    包含单晶层的三维纳米结构的结构

    公开(公告)号：US20110033674A1

    公开(公告)日：2011-02-10

    申请号：US12711309

    申请日：2010-02-24

    申请人： Amit Goyal ,  Sung-Hun Wee

    发明人： Amit Goyal ,  Sung-Hun Wee

    IPC分类号： B32B3/10 ,  B05D5/12 ,  C23C14/28 ,  C23C14/34

    CPC分类号： D02G3/00 ,  C30B11/12 ,  C30B29/16 ,  C30B29/605 ,  H01L39/2422 ,  H01L39/2454 ,  H01M4/0428 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1391 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/505 ,  H01M4/525 ,  Y10T428/2481 ,  Y10T428/249921 ,  Y10T428/2913 ,  Y10T428/298

    摘要： A simple and controlled method to fabricate a 3D, epitaxial, biaxially textured nanofence comprised of single crystalline MgO nanobelt segments or links that grew both vertically and horizontally along directions of the (100) STO substrate was developed. Continuous supply of Ni catalyst during the co-laser ablation of MgO and Ni metal led to the growth of nanobelts with such a unique morphology. Individual single crystalline MgO nanobelts had a square cross-section with high aspect ratios. X-ray diffraction results obtained from an entire MgO nanofence layer confirmed that MgO nanofence had epitaxial relation with STO substrate of [100]MgO∥[100]STO. Such oxide nanofences can be used as a 3D biaxially-textured nanotemplate for epitaxial growth of wide-ranging, 3D, electronic, magnetic and electromagnetic nanodevices.

    摘要翻译： 开发了一种用于制造由（100）STO衬底沿着100个方向生长的单晶MgO纳米带段或链节构成的3D，外延，双轴纹理化纳米的简单和可控的方法。 在MgO和Ni金属的共激光烧蚀期间连续供应Ni催化剂导致具有这种独特形态的纳米带的生长。 单个单晶MgO纳米带具有高纵横比的正方形横截面。 从整个MgO纳米层获得的X射线衍射结果证实MgO纳米具有与[100] MgO | [100] STO的STO衬底的外延关系。 这种氧化物纳米结构可用作3D双轴织构的纳米模板，用于宽范围，3D，电子，磁性和电磁纳米器件的外延生长。