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    SEMICONDUCTOR LASERS
    1.
    发明申请
    SEMICONDUCTOR LASERS 审中-公开
    半导体激光器

    公开(公告)号：US20100111126A1

    公开(公告)日：2010-05-06

    申请号：US12608346

    申请日：2009-10-29

    申请人： Junichiro Shimizu ,  Etsuko Nomoto ,  Shinichi Nakatsuka ,  Tsukuru Ohtoshi ,  Takafumi Taniguchi

    发明人： Junichiro Shimizu ,  Etsuko Nomoto ,  Shinichi Nakatsuka ,  Tsukuru Ohtoshi ,  Takafumi Taniguchi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18 ,  H01S5/028 ,  H01S5/162 ,  H01S5/20 ,  H01S5/3211 ,  H01S2301/173 ,  H01S2301/176

    摘要： In a horizontal-cavity vertical-emitting semiconductor laser including an Al-containing semiconductor layer, deterioration of light output property due to oxidization of the Al-containing semiconductor layer is suppressed. A lower cladding layer, an active layer, and an upper cladding layer are stacked in this order from the lower layer on a main surface of a substrate made of GaAs. The upper cladding layer is made of AlGaAs or AlGaInP containing Al in high concentration. An emitting plane layer combining a function of preventing the oxidization of Al contained in the upper cladding layer is formed on an upper portion of the upper cladding layer, and an electric contact layer is formed on an upper portion of the emitting plane layer. The emitting plane layer is made of InGaP, and the electric contact layer is made of GaAs.

    摘要翻译： 在包含含Al半导体层的水平腔垂直发射半导体激光器中，抑制了由于含Al半导体层的氧化引起的光输出特性的劣化。 从GaAs的衬底的主表面上的下层依次堆叠下包层，有源层和上覆层。 上覆层由含有高浓度Al的AlGaAs或AlGaInP构成。 在上部包层的上部形成有结合防止上部包层中的Al的氧化的功能的发光面层，在发光面层的上部形成有电接触层。 发光平面层由InGaP制成，电接触层由GaAs制成。

    Driving system for a semiconductor laser device
    3.
    发明授权
    Driving system for a semiconductor laser device 失效
    半导体激光器驱动系统

    公开(公告)号：US07206329B2

    公开(公告)日：2007-04-17

    申请号：US10871280

    申请日：2004-06-21

    申请人： Shinichi Nakatsuka ,  Jyunshin Sakamoto ,  Hiroshi Inenaga ,  Susumu Saito

    发明人： Shinichi Nakatsuka ,  Jyunshin Sakamoto ,  Hiroshi Inenaga ,  Susumu Saito

    IPC分类号： H01S3/00

    CPC分类号： B82Y20/00 ,  G06K15/1209 ,  H01S5/042 ,  H01S5/06808 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3095 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/34353 ,  H01S5/3436 ,  H01S5/4031

    摘要： When a semiconductor laser is energized, a virtual junction temperature rises to reduce a threshold current, which fluctuates a light output by the unit of a several microseconds, thereby causing printing irregularity. An object of the invention is to prevent the fluctuation in light output occurring due to the temperature change caused by the energization of the semiconductor laser with a simple circuit structure and under the driving condition of a small bias current. A constant voltage driving is performed with a circuit or device having negative resistance characteristics being arranged in series with the semiconductor laser. Thus, the reduction in light output of the semiconductor laser due to the temperature rise is compensated for by an increase in driving current thanks to a reduction in rising voltage of current/voltage characteristics.

    摘要翻译： 当半导体激光器通电时，虚拟结温度上升以减小阈值电流，其使光输出以几微秒为单位波动，从而导致印刷不规则。 本发明的目的是为了防止由于由简单的电路结构的半导体激光器的激励引起的温度变化和在小的偏置电流的驱动条件下产生的光输出的波动。 使用具有负电阻特性的电路或器件与半导体激光器串联布置来执行恒定电压驱动。 因此，由于电流/电压特性的上升电压的降低，由于温度升高导致的半导体激光器的光输出的减少被驱动电流的增加所补偿。

    Method for assembling array-type semiconductor laser device
    6.
    发明申请
    Method for assembling array-type semiconductor laser device 有权
    阵列式半导体激光器件的组装方法

    公开(公告)号：US20090042327A1

    公开(公告)日：2009-02-12

    申请号：US12219133

    申请日：2008-07-16

    申请人： Shinichi Nakatsuka

    发明人： Shinichi Nakatsuka

    IPC分类号： H01L21/02

    CPC分类号： H01S5/4031 ,  H01S5/02268 ,  H01S5/02272

    摘要： According to an aspect of the present invention, there is provided a method for assembling a semiconductor laser device, including: preparing a laser chip including: a substrate; stripe waveguides that are formed on the substrate and that each includes a gain producing area and a window area; electrodes formed on the stripe waveguides; an insulating layer formed on the electrodes; a metal layer formed on the insulating layer; projections arranged at an interval in the window areas; and joining structures connected to the electrodes and formed in the window areas; preparing a submount including: a first solder; second solders arranged at the interval; and submount electrodes connected to the second solders; contacting the laser chip to the submount by fitting the projections with respect to the second solders; and heating the submount and the laser chip.

    摘要翻译： 根据本发明的一个方面，提供了一种用于组装半导体激光器件的方法，包括：准备包括：衬底的激光器芯片; 条形波导，其形成在基板上，并且每个包括增益产生区域和窗口区域; 在条形波导上形成的电极; 形成在电极上的绝缘层; 形成在所述绝缘层上的金属层; 在窗口区域间隔布置的突起; 以及连接到电极并形成在窗口区域中的接合结构; 准备一个底座，包括：第一个焊锡; 第二次焊接间隔排列; 和连接到第二焊料的底座电极; 通过将所述突起相对于所述第二焊料接合来将所述激光芯片接触所述基座; 并加热底座和激光芯片。

    Semiconductor laser array
    7.
    发明授权
    Semiconductor laser array 失效
    半导体激光阵列

    公开(公告)号：US06829265B2

    公开(公告)日：2004-12-07

    申请号：US10145022

    申请日：2002-05-15

    申请人： Shinichi Nakatsuka ,  Susumu Saito ,  Junshin Sakamoto ,  Kazuo Sakaki ,  Masahide Tokuda

    发明人： Shinichi Nakatsuka ,  Susumu Saito ,  Junshin Sakamoto ,  Kazuo Sakaki ,  Masahide Tokuda

    IPC分类号： H01S304

    CPC分类号： H01S5/4031 ,  H01L2224/13 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276

    摘要： The subject of the disclosed art is to prevent a short circuit between plural electrodes caused by soldering in the assembling process for a semiconductor laser element. The constitution for improving the subject is as follows. A semiconductor laser device comprises a semiconductor laser chip having a first electrode and a laser sustaining material, in which the laser sustaining material has electrodes and solder layers connected electrically therewith on the surface where the semiconductor laser chip is mounted, the first electrode of the semiconductor laser chip is connected with the solder layer of the laser sustaining material and at least the solder layer of the laser sustaining material extends from at least one end face in the longitudinal direction of an optical resonator of the semiconductor laser chip to the outside of the optical resonator.

    摘要翻译： 所公开的技术的主题是为了防止在半导体激光元件的组装过程中由焊接引起的多个电极之间的短路。 改进主题的宪法如下。 半导体激光器件包括具有第一电极和激光维持材料的半导体激光器芯片，其中激光维持材料具有在其上安装半导体激光器芯片的表面上与其电连接的电极和焊料层，半导体的第一电极 激光芯片与激光维持材料的焊料层连接，并且至少激光维持材料的焊料层从半导体激光器芯片的光学谐振器的纵向方向上的至少一个端面延伸到光学器件的外部 谐振器。

    Light beam scanning apparatus which controls power and spot shape of light beam
    8.
    发明授权
    Light beam scanning apparatus which controls power and spot shape of light beam 失效
    光束扫描装置，用于控制光束的光束和斑点形状

    公开(公告)号：US5959655A

    公开(公告)日：1999-09-28

    申请号：US653395

    申请日：1996-05-24

    申请人： Seiji Maruo ,  Shinichi Nakatsuka ,  Akira Arimoto ,  Kunio Sato ,  Shinya Kobayashi ,  Susumu Saito

    发明人： Seiji Maruo ,  Shinichi Nakatsuka ,  Akira Arimoto ,  Kunio Sato ,  Shinya Kobayashi ,  Susumu Saito

    IPC分类号： G01J1/42 ,  G02B26/12 ,  H04N1/00 ,  H04N1/23 ,  H04N1/40 ,  G01J1/32

    CPC分类号： H04N1/40043 ,  G01J1/4257 ,  G02B26/127 ,  H04N1/00002 ,  H04N1/00015 ,  H04N1/00029 ,  H04N1/00063 ,  H04N1/00082 ,  H04N1/0408 ,  H04N1/0426 ,  H04N1/2307 ,  H04N1/2346 ,  H04N1/40037 ,  H04N1/4005

    摘要： A light beam scanning apparatus in which laser power and spot shape of an emitted laser beam are controlled, has a laser control signal generating part for changing a picture signal to a laser power control signal and a spot shape control signal, a laser power control current generating part which is driven by the laser power control signal, a spot shape control current generating part which is driven by the shape control signal, and a laser beam emission part for emitting a laser beam having a laser power and a spot shape which are controlled by the control signals via a commonly used light wave guiding part, wherein the control signal generating part generates or corrects the control signals based on at least one of the difference between the laser power of a beam to be emitted and a detected laser power, the difference between the spot shape of a beam to be emitted and a detected laser power, a detected temperature at the laser beam emission part, and an effective light emission pixel number.

    摘要翻译： 控制发射激光束的激光功率和斑点形状的光束扫描装置具有激光控制信号产生部分，用于将图像信号改变为激光功率控制信号和光斑形状控制信号，激光功率控制电流 由激光功率控制信号驱动的发光部分，由形状控制信号驱动的光斑形状控制电流产生部分，以及激光束发射部分，用于发射具有被控制的激光光焦度和光斑形状的激光束 通过所述控制信号经由通常使用的光波导部，其中，所述控制信号生成部基于所发射的光束的激光功率与所检测的激光功率的差异中的至少一个来生成或校正所述控制信号， 要发射的光束的光斑形状与检测到的激光功率之间的差异，激光束发射部分处的检测温度和有效发光像素 el号码。

    Fabrication process of semiconductor lasers
    9.
    发明授权
    Fabrication process of semiconductor lasers 失效
    半导体激光器的制造工艺

    公开(公告)号：US4783425A

    公开(公告)日：1988-11-08

    申请号：US924774

    申请日：1986-10-30

    申请人： Tadashi Fukuzawa ,  Yuichi Ono ,  Shinichi Nakatsuka ,  Takashi Kajimura

    发明人： Tadashi Fukuzawa ,  Yuichi Ono ,  Shinichi Nakatsuka ,  Takashi Kajimura

    IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/323 ,  H01S5/34 ,  H01L21/205 ,  H01L21/225 ,  H01L21/265

    CPC分类号： B82Y20/00 ,  H01L33/0062 ,  H01S5/2231 ,  H01S5/34 ,  H01S5/2081 ,  H01S5/32316

    摘要： A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer.

    摘要翻译： 如果通过在p-GaAlAs包层上作为电流限制层的n-GaAs层中的化学蚀刻形成条纹形式的沟槽，则p-GaAlAs包层暴露于空气中，凹槽为 形成为到达包层。 GaAlAs容易氧化，从而在其表面上形成不稳定的降解层。 为了解决现有技术的问题，在p-GaAlAs包层上形成作为覆盖层的未掺杂的GaAs层，形成n-GaAs层，进行蚀刻，使未掺杂的GaAs层为 简单暴露。 然后在MBE装置中加热未掺杂的GaAs层，同时用As分子束照射并进行热蚀刻。 因此，在真空中露出包覆层，在其上形成p-GaAlAs层。 然而，该方法不适于批量生产，因为热蚀刻不稳定，并且需要非常高真空度的MBE装置。 由于加热，晶体的质量也降低。 因此，本发明提供一种半导体激光器的制造工艺，其中由于在未掺杂的GaAs层中的诸如锌离子的杂质的扩散而导致的构成元素的相互扩散，覆盖层消失。