Vented semiconductor device package having separate substrate, strengthening ring and cap structures

    公开(公告)号:US06410981B1

    公开(公告)日:2002-06-25

    申请号:US09176326

    申请日:1998-10-22

    申请人: Tetsuya Tao

    发明人: Tetsuya Tao

    IPC分类号: H01L2312

    摘要: A packaged semiconductor device having high reliability that allows for a large number of pins and that provides good heat removal properties, and that can discharge the high pressure moisture in a gas state from the inside thereof to the exterior. The device includes a strengthening ring arranged around a semiconductor chip that includes a process type electrode and that is mounted on an isolated substrate; a resin to fill spaces between the semiconductor chip and the isolated substrate; and a cap on the semiconductor chip and the strengthening ring, wherein at least one vent is formed perpendicular to the direction of the thickness of the semiconductor chip.