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    Compact noncontact excess carrier lifetime characterization apparatus
    1.
    发明授权
    Compact noncontact excess carrier lifetime characterization apparatus 失效
    紧凑型非接触式超载体寿命表征装置

    公开(公告)号：US5477158A

    公开(公告)日：1995-12-19

    申请号：US130908

    申请日：1993-10-04

    申请人： Thomas A. Shafer ,  James H. McCurdy ,  Thomas R. Schimert ,  Austin J. Brouns

    发明人： Thomas A. Shafer ,  James H. McCurdy ,  Thomas R. Schimert ,  Austin J. Brouns

    IPC分类号： G01R31/265 ,  H01L21/66 ,  G01R31/26 ,  G01R27/06

    CPC分类号： G01R31/2656 ,  H01L22/14

    摘要： An apparatus (10) is provided for measuring the excess carrier lifetime in a semiconductor material, such as an HgCdTe wafer (MCT). The apparatus includes a computer controller (56) which automates the functions of the apparatus, including the operation of the shutter (28) to control the time the testing samples are exposed to the excitation energy from a laser (14), the laser energy intensity on the sample, the position of the wafer controlled by the computer controller operating a motorized sample positioner (39) and maintaining the temperature of the sample. Multiple samples are taken by the apparatus which are averaged and analyzed to result in a characterization of the carrier lifetime.

    摘要翻译： 提供了一种用于测量诸如HgCdTe晶片（MCT）的半导体材料中的过量载流子寿命的装置（10）。 该装置包括一个计算机控制器（56），其使装置的功能自动化，包括快门（28）的操作，以控制测试样本暴露于来自激光器（14）的激发能量的时间，激光能量强度 在样品上，由操作电动样品定位器（39）的计算机控制器控制的晶片的位置并保持样品的温度。 多个样品由装置取出，其被平均和分析以导致载流子寿命的表征。

    MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME
    3.
    发明申请
    MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME 有权
    MICROBOLOMETER INFRARED DETECTOR元素及其形成方法

    公开(公告)号：US20100133536A1

    公开(公告)日：2010-06-03

    申请号：US11498939

    申请日：2006-08-03

    申请人： Althanasios J. Syllaios ,  Thomas R. Schimert ,  Michael F. Taylor

    发明人： Althanasios J. Syllaios ,  Thomas R. Schimert ,  Michael F. Taylor

    IPC分类号： H01L31/0376 ,  H01L31/18 ,  H01L21/50

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/04 ,  G01J5/046

    摘要： Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

    摘要翻译： 可以通过改变类型的用于形成非晶硅基微热辐射计膜材料的前体和/或通过改变最终的非晶硅基微热辐照仪膜材料的组成来形成和实现微辐射热计红外探测器元件（例如， 通过调节合金组成）以改变材料性质如活化能和载流子迁移率。 无定形硅基微测辐射热计薄膜材料可以包括不同量的一种或多种附加和任选的材料，包括氢，氟，锗，n型掺杂剂和p型掺杂剂。

    Vacuum package fabrication of integrated circuit components
    5.
    发明授权
    Vacuum package fabrication of integrated circuit components 有权
    集成电路元件的真空封装制造

    公开(公告)号：US06586831B2

    公开(公告)日：2003-07-01

    申请号：US09928031

    申请日：2001-08-10

    申请人： Roland W. Gooch ,  Thomas R. Schimert

    发明人： Roland W. Gooch ,  Thomas R. Schimert

    IPC分类号： H01L2312

    CPC分类号： B81B7/0077 ,  H01L2924/0002 ,  Y10S438/909 ,  H01L2924/00

    摘要： A vacuum package for integrated circuit devices includes a sealing ring having multiple control spacers of uniform thickness distributed around the sealing ring. The sealing ring is in a designated area on a substrate, material and surrounds one or more integrated circuit devices. The vacuum package also includes a sealing layer on the sealing ring. A vacuum package lid is sealed to the sealing ring by the sealing layer on the sealing ring. The vacuum package lid provides a vacuum cell for the one or more integrated circuit devices.

    摘要翻译： 用于集成电路器件的真空封装包括具有分布在密封环周围的均匀厚度的多个控制间隔物的密封环。 密封圈位于衬底上的指定区域中，并且包围一个或多个集成电路器件。 真空包装还包括密封环上的密封层。 真空包装盖通过密封环上的密封层密封到密封环。 真空包装盖为一个或多个集成电路装置提供真空室。

    Microbolometer infrared detector elements and methods for forming same
    8.
    发明授权
    Microbolometer infrared detector elements and methods for forming same 有权
    微波辐射计红外探测器元件及其形成方法

    公开(公告)号：US07718965B1

    公开(公告)日：2010-05-18

    申请号：US11498939

    申请日：2006-08-03

    申请人： Athanasios J. Syllaios ,  Thomas R. Schimert ,  Michael F. Taylor

    发明人： Athanasios J. Syllaios ,  Thomas R. Schimert ,  Michael F. Taylor

    IPC分类号： G01J5/02

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/04 ,  G01J5/046

    摘要： Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

    摘要翻译： 可以通过改变类型的用于形成非晶硅基微热辐射计膜材料的前体和/或通过改变最终的非晶硅基微热辐照仪膜材料的组成来形成和实现微辐射热计红外探测器元件（例如， 通过调节合金组成）以改变材料性质如活化能和载流子迁移率。 无定形硅基微测辐射热计薄膜材料可以包括不同量的一种或多种附加和任选的材料，包括氢，氟，锗，n型掺杂剂和p型掺杂剂。

    Fabrication method for integrated structure such as photoconductive impedance-matched infrared detector with heterojunction blocking contacts
    9.
    发明授权
    Fabrication method for integrated structure such as photoconductive impedance-matched infrared detector with heterojunction blocking contacts 失效
    具有异质结阻塞触点的光导阻抗匹配红外探测器等集成结构的制造方法

    公开(公告)号：US5580795A

    公开(公告)日：1996-12-03

    申请号：US389549

    申请日：1995-02-15

    申请人： Thomas R. Schimert ,  Scott L. Barnes

    发明人： Thomas R. Schimert ,  Scott L. Barnes

    IPC分类号： H01L31/0264 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/18 ,  H01L25/00 ,  H01L31/00

    CPC分类号： H01L31/109 ,  H01L27/1446 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/1828 ,  Y02E10/543 ,  Y10S438/904 ,  Y10S438/977

    摘要： A photoconductive isotype heterojunction impedance-matched infrared detector has blocking contacts which are positioned on the bottom side of the detector. The blocking contacts prevent transfer of minority carriers from the active region of the detector, thereby extending the lifetime of these carriers. The detector is formed by first fabricating an active layer followed by an isotype blocking layer on a growth substrate. These layers are etched and appropriate passivation layers and contacts are applied. A mechanical supporting substrate is applied to the detector and the growth substrate is removed. Etch stop holes are formed which extend into the active layer of the detector. A precision thickness of the active layer required in an impedance-matched detector design is produced by thinning the active layer in an etching process until the surface of the active layer reaches the etch stop hole. The detector produced in accordance with the structure and methods set forth herein is highly suitable for use in an array of such detectors which can form an infrared focal plane array.

    摘要翻译： 光导同种异质结阻抗匹配红外检测器具有位于检测器底侧的阻挡触点。 阻塞触点防止少数载流子从检测器的有源区传输，从而延长这些载体的寿命。 检测器通过首先在生长衬底上制造活性层，然后是同种型阻断层来形成。 蚀刻这些层并施加合适的钝化层和触点。 将机械支撑衬底施加到检测器，并移除生长衬底。 形成延伸到检测器的有源层中的蚀刻停止孔。 在阻抗匹配检测器设计中所需的有源层的精确厚度通过在蚀刻工艺中使有源层变薄直到有源层的表面到达蚀刻停止孔来产生。 根据本文所阐述的结构和方法生产的检测器非常适用于可形成红外焦平面阵列的这种检测器的阵列。