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公开(公告)号：US08718722B2
公开(公告)日：2014-05-06
申请号：US12399405
申请日：2009-03-06
申请人： Toshiaki Fukunaga
发明人： Toshiaki Fukunaga
IPC分类号： H04M1/00
CPC分类号： H04M1/0258 , H04M1/6058 , H04R1/1041 , H04R5/04 , H04R2201/107 , H04R2420/03 , H04R2420/05 , H04R2499/11
摘要： In order to mount a plurality of kinds of earphone microphones, a mobile phone includes an earphone microphone terminal to accept either a plug of a PTT earphone microphone or a plug of an earphone microphone, and an earphone microphone switching portion to detect whether the PTT earphone microphone or the earphone microphone is accepted and switch a contact point between a plurality of contact points of the earphone microphone terminal depending on the kind of the detected earphone microphone.
摘要翻译： 为了安装多种耳机麦克风，移动电话包括耳机麦克风终端，以接收PTT耳机麦克风的插头或耳机麦克风的插头，以及耳机麦克风切换部分，以检测PTT耳机 麦克风或耳机麦克风被接受，并根据检测到的耳机麦克风的种类在耳机麦克风终端的多个接触点之间切换接触点。
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公开(公告)号：US08708893B2
公开(公告)日：2014-04-29
申请号：US12711896
申请日：2010-02-24
申请人： Takao Ozaki , Toshiaki Fukunaga
发明人： Takao Ozaki , Toshiaki Fukunaga
IPC分类号： A61B1/04
CPC分类号： A61B1/0055 , A61B1/00096 , A61B1/00101 , A61B1/0011 , G02B23/2476
摘要： The present invention provides a structural unit, an endoscope and an adhering method that suppress deterioration in adhesive strength of an adhesive that adheres plural structural members that structure the endoscope. An imaging unit 68 side of an adhesive 88 is covered by a first moisture-proof coating 91, and an obverse side of the adhesive 88 is covered by a second moisture-proof coating 92. Due thereto, in autoclave sterilization processing or the like, even if moisture passes along a wire portion 86 and penetrates into the imaging unit 68, penetration of the moisture into the adhesive is suppressed by the first moisture-proof coating 91. Due thereto, deterioration in adhesive strength of the adhesive, that adheres plural structural members of the imaging unit 68, can be suppressed.
摘要翻译： 本发明提供一种结构单元，内窥镜和粘附方法，其抑制粘附构成内窥镜的多个结构构件的粘合剂的粘合强度的劣化。 粘合剂88的成像单元68侧被第一防潮涂层91覆盖，粘合剂88的正面被第二防潮涂层92覆盖。由此，在高压灭菌处理等中， 即使水分沿线部分86穿过成像单元68，通过第一防潮涂层91抑制水分渗透到粘合剂中。由此，粘合剂的粘合强度降低，粘附多个结构 可以抑制成像单元68的成员。
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3.发明申请公开(公告)号：US20060115598A1
公开(公告)日：2006-06-01
申请号：US11290695
申请日：2005-12-01
CPC分类号： B41J2/1606 , Y10T428/24355
摘要： The repellency increasing structure includes a substrate, if a surface of the substrate is flat, a flat surface of which shows lyophilic property with respect to a liquid having a surface tension lower than that of water and multiple recesses multiple and/or projections that are formed in the surface of the substrate. Inner walls of the recesses and outer walls of the projections are substantially parallel to a thickness direction of the substrate. The structure further includes a repellent layer that covers the recesses and the projections. In the liquid ejection head, a solution ejection surface around multiple through-holes of a ejection substrate corresponds to the surface of the substrate of the repellency increasing structure in which the recesses and/or the projections are formed. In the stain-resistant film, the substrate of the repellency increasing structure is a support film.
摘要翻译： 排斥性增加结构包括基材，如果基材的表面是平坦的，其平坦表面相对于表面张力低于水的表面张力的液体显示亲液性，并且多个凹陷形成多个和/或突起 在基板的表面。 突起的凹部和外壁的内壁基本上平行于基板的厚度方向。 该结构还包括覆盖凹部和突起的驱避层。 在液体喷射头中，喷射基板的多个通孔周围的溶液喷射面对应于形成凹部和/或突起的排斥性增加结构的基板的表面。 在耐污染膜中，斥力增加结构的基材是支持膜。
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公开(公告)号：US06999486B2
公开(公告)日：2006-02-14
申请号：US10787768
申请日：2004-02-27
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S3/09415 , H01S5/0207 , H01S5/0224 , H01S5/02264 , H01S5/02423 , H01S5/4025
摘要： In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.
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公开(公告)号：US20050206759A1
公开(公告)日：2005-09-22
申请号：US11076911
申请日：2005-03-11
IPC分类号： H01L27/148 , G06K7/00 , G06K9/20 , H01L27/146 , H01L27/30 , H04N3/14 , H04N9/04 , H04N9/07 , H04N5/335
CPC分类号： H01L27/307 , H01L27/14609 , H01L27/14647 , H01L27/14692 , H04N9/045
摘要： A color sensor comprises: light reception elements that generate color signals corresponding to stimulus values of colors in an RGB color system, the stimulus values of colors comprising a stimulus value of blue (B) and a stimulus value of red (R), wherein the light reception elements comprise a first light reception element that generates a red (R) color signal corresponding to the stimulus values of red (R); and a first portion that adds a signal corresponding to the stimulus value of blue (B) as a positive sensitivity component to one of: the first light reception element; and a red (R) color signal generated by the first light reception element.
摘要翻译： 颜色传感器包括：光接收元件，其产生对应于RGB颜色系统中的颜色的刺激值的颜色信号，颜色的刺激值包括蓝色（B）的刺激值和红色（R）的刺激值，其中 光接收元件包括产生对应于红色（R）的刺激值的红色（R）颜色信号的第一光接收元件; 以及第一部分，其将与蓝色（B）的刺激值相对应的信号作为正灵敏度分量添加到第一光接收元件之一; 和由第一光接收元件产生的红（R）彩色信号。
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公开(公告)号：US20050206755A1
公开(公告)日：2005-09-22
申请号：US11080966
申请日：2005-03-16
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： B82Y10/00 , H01L27/14647
摘要： A solid-state imaging device provided by stacking a photoelectric conversion element is provided with a semiconductor substrate having a signal readout circuit and a photoelectric conversion element stacked on the semiconductor substrate, an incident light is photoelectrically converted to a signal according to the light quantity by the photoelectric conversion element and read out by the signal readout circuit, and the photoelectric conversion element is composed of a first deposition layer comprising a p-conductive quantum dot and an i-conductive quantum dot, and a second deposition layer comprising an n-conductive quantum dot and an i-conductive quantum dot
摘要翻译： 通过堆叠光电转换元件而提供的固态成像器件设置有半导体衬底，该半导体衬底具有堆叠在半导体衬底上的信号读出电路和光电转换元件，入射光根据光量被光电转换成信号 所述光电转换元件由所述信号读出电路读出，所述光电转换元件由包含p导电量子点和i导电量子点的第一沉积层构成，所述第二沉积层包含n导电 量子点和i导电量子点
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7.发明申请公开(公告)号：US20050205879A1
公开(公告)日：2005-09-22
申请号：US11080539
申请日：2005-03-16
申请人： Toshiaki Fukunaga
发明人： Toshiaki Fukunaga
IPC分类号： H01L27/146 , H01L27/15
CPC分类号： B82Y10/00 , H01L27/14647
摘要： A photoelectric converting film stack type solid-state image pickup device comprising: a semiconductor substrate in which a signal read circuit is formed; and at least one photoelectric converting film interposed between two electrode films, said at least one photoelectric converting film being stacked above the semiconductor substrate, wherein a signal corresponding to an intensity of incident light is read outside by the signal read circuit, the signal being generated by photoelectric conversion with the photoelectric converting film, wherein the photoelectric converting film comprises: a first layer comprising: an ultrafine particle including (i) a quantum dot contributing to the photoelectric conversion and (ii) a material having a band gap larger than that of the quantum dot, the quantum dot being coated with the material; and a hole transport layer stacked on the first layer.
摘要翻译： 一种光电转换膜堆叠式固态摄像装置，包括：形成有信号读取电路的半导体基板; 以及插入在两个电极膜之间的至少一个光电转换膜，所述至少一个光电转换膜堆叠在半导体衬底之上，其中通过信号读取电路在外部读取与入射光强度相对应的信号，产生信号 通过光电转换膜进行光电转换，其中光电转换膜包括：第一层，包括：超细颗粒，其包括（i）有助于光电转换的量子点，和（ii）具有大于 量子点，量子点被材料涂覆; 以及堆叠在第一层上的空穴传输层。
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8.发明授权Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection 失效半导体激光装置，其中上包层的近边缘部分被绝缘以防止电流注入公开(公告)号：US06901100B2
公开(公告)日：2005-05-31
申请号：US10187798
申请日：2002-07-03
IPC分类号： H01L21/205 , H01S5/16 , H01S5/00
摘要： In a semiconductor laser device: a p-type AlzGa1-zAs cladding layer is formed above an active layer, where z≧0.3; a p-type GaAs contact layer is formed on the cladding layer except for at least one near-edge portion of the cladding layer; and an electrode is formed on at least the contact layer. The upper surface of each of the at least one near-edge portion of the cladding layer is insulated, where each of the at least one near-edge portion of the cladding layer is located in a vicinity of one of opposite end facets perpendicular to the direction of laser emission.
摘要翻译： 在半导体激光器件中，在有机层的上方形成p型Al z Ga 1-z O z，其中z> = 0.3; 除了包层的至少一个近边缘部分之外，在包层上形成p型GaAs接触层; 并且至少在所述接触层上形成电极。 包覆层的至少一个近边缘部分的每一个的上表面是绝缘的，其中包层的至少一个近边缘部分中的每一个位于垂直于 激光发射方向。
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公开(公告)号：US20050024439A1
公开(公告)日：2005-02-03
申请号：US10841978
申请日：2004-05-10
申请人： Toshiaki Fukunaga , Isao Tsuruma
发明人： Toshiaki Fukunaga , Isao Tsuruma
IPC分类号： B41J2/06
CPC分类号： B41J2/06
摘要： The liquid ejection head ejects a solution, in which charged particles are dispersed, toward a counter electrode. The head has a head substrate, a solution guide member formed on a surface of the head substrate so as to protrude and include a sharp-pointed portion having a sharply pointed tip end, with the sharp-pointed portion being which is formed by inclined surfaces and having a cross section that is reduced as a distance to the tip end is decreased, and a solution supply path having a solution outflow opening through which the solution flows out to the neighborhood of the sharp-pointed portion so as to form a solution flow around the inclined surfaces. The solution flow is formed around the tip end of the sharp-pointed portion in a direction going across the inclined surface and a part of the solution flow is guided to the tip end and is ejected as a droplet by means of an electrostatic force.
摘要翻译： 液体喷射头朝向对置电极喷射带电粒子分散的溶液。 头部具有头基板，溶液引导部件，其形成在头基板的表面上，以突出并且包括具有尖锐尖端的尖锐部分，尖锐部分由倾斜表面形成 并且具有与顶端距离减小的横截面减小，并且具有溶液流出开口的溶液供给路径，溶液通过该流出开口流出到尖锐部分附近，以形成溶液流 围绕倾斜的表面。 溶液流沿着尖锐部分的尖端形成在横过倾斜表面的方向上，并且溶液流的一部分被引导到尖端，并且通过静电力作为液滴喷射。
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10.发明授权GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits 有权在具有离散形成的凹坑的GaN层上的受控生长条件下形成GaN衬底公开(公告)号：US06797416B2
公开(公告)日：2004-09-28
申请号：US10391564
申请日：2003-03-20
IPC分类号： B32B900
CPC分类号： C30B25/02 , C30B25/04 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0213 , H01S5/0422 , H01S5/22 , H01S5/3202 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10T428/12528 , Y10T428/24273
摘要： In a process for producing a substrate for use in a semiconductor element: a first GaN layer having a plurality of pits at its upper surface is formed; and then a second GaN layer is formed by growing a GaN crystal over the first GaN layer until the upper surface of the second GaN layer becomes flattened. Each of the above plurality of pits has an opening area of 0.005 to 100 &mgr;m2 and a depth of 0.1 to 10.0 &mgr;m.
摘要翻译： 在制造用于半导体元件的衬底的工艺中，形成在其上表面具有多个凹坑的第一GaN层; 然后通过在第一GaN层上生长GaN晶体直到第二GaN层的上表面变平为止形成第二GaN层。 上述多个凹坑的开口面积为0.005〜100μm，深度为0.1〜10.0μm。
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