公开(公告)号：US4158754A

公开(公告)日：1979-06-19

申请号：US716299

申请日：1976-08-20

Applicant: Jimpachi Yonezaki ,  Yoshihiro Takahashi ,  Toshihiko Shimada ,  Katsuo Okuyama

Inventor： Jimpachi Yonezaki ,  Yoshihiro Takahashi ,  Toshihiko Shimada ,  Katsuo Okuyama

IPC: H05K7/02 ,  H04Q1/02 ,  H04Q1/04 ,  H04Q1/14

CPC classification number: H04Q1/04 ,  H04Q1/062 ,  H04Q1/064

Abstract: A mounting apparatus for communication signals exchange equipment is described. The apparatus includes supporting poles, each of which is erected close to each of the components of the communication signals exchange equipment, and further includes frameworks which are assembled horizontally above said supporting poles and rigidly fixed to the top ends of said supporting poles. The supporting poles and frameworks are provided both for mechanically supporting said components and for distributing a large number of communication signals cables between one component and other components. The construction of both the supporting poles and frameworks is completed by the time said components are located at their desired positions.

Abstract translation: 描述了用于通信信号交换设备的安装装置。 该装置包括支撑杆，每个撑杆靠近通信信号交换设备的每个部件竖立，并且还包括水平地组装在所述支撑杆上并刚性地固定到所述支撑杆的顶端的框架。 提供支撑杆和框架用于机械地支撑所述部件并且用于在一个部件和其他部件之间分配大量通信信号电缆。 在所述部件位于其期望位置的时候完成支撑杆和框架的构造。

公开(公告)号：US5384204A

公开(公告)日：1995-01-24

申请号：US166620

申请日：1993-12-14

Applicant: Kazuhito Yumoto ,  Norio Wakabayashi ,  Masao Nakazawa ,  Shinichi Wakabayashi ,  Norio Wada ,  Fumio Kuraishi ,  Toshihiko Shimada

Inventor： Kazuhito Yumoto ,  Norio Wakabayashi ,  Masao Nakazawa ,  Shinichi Wakabayashi ,  Norio Wada ,  Fumio Kuraishi ,  Toshihiko Shimada

IPC: C25D5/10 ,  C23C28/00 ,  C25D7/06 ,  H01L21/60 ,  H01L23/495 ,  H01L23/498 ,  H05K1/00 ,  H05K3/24 ,  H05K3/34

CPC classification number: H01L23/49572 ,  H01L23/49866 ,  H05K3/3473 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K2201/0338 ,  H05K2201/10681 ,  H05K2203/0435 ,  H05K3/244 ,  Y10T428/12569 ,  Y10T428/12715 ,  Y10T428/12875 ,  Y10T428/12889 ,  Y10T428/1291

Abstract: A tape useful for an automatic bonding process when manufacturing a high-frequency semiconductor device, the tape comprising an insulating flexible film, and circuit patterns consisting of copper or copper-alloy formed on the insulating film, each of the circuit patterns having inner and an outer lead portions. A tin or tin-lead plated film is formed on the pattern, and an intermediate plated film is formed on at least the outer lead portion as an underlayer. The intermediate plated film consists of a metal or metal alloy selected from nickel, cobalt, gold, silver, platinum, palladium, indium or rhodium.

Abstract translation: 一种用于在制造高频半导体器件时的自动接合工艺的带子，所述带包括绝缘柔性膜，以及形成在绝缘膜上的由铜或铜合金组成的电路图案，每个电路图案具有内部和 外引线部分。 在图案上形成锡或锡铅镀膜，至少在作为底层的外引线部分上形成中间镀膜。 中间镀膜由选自镍，钴，金，银，铂，钯，铟或铑的金属或金属合金构成。

公开(公告)号：US5585195A

公开(公告)日：1996-12-17

申请号：US89550

申请日：1993-07-12

Applicant: Toshihiko Shimada

Inventor： Toshihiko Shimada

IPC: H01L21/56 ,  H01L21/48 ,  H01L23/28 ,  H01L23/495 ,  H01L23/50 ,  B22F5/00 ,  B05D5/12

CPC classification number: H01L23/49579 ,  H01L21/4821 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12028

Abstract: A metal insert at least partially embedded in a molded resin mass comprises a metal insert blank, and a substantial amount of nickel or nickel alloy granulations produced over a surface of the metal insert blank, and the size of the granulations is at most 1.0 .mu.m. The metal insert blank is treated by a first electrolytic plating process such that a substantial quantity of copper nuclei spreaded over the surface, and the copper nuclei are grown up as the nickel or nickel alloy granulations by a second electrolytic-plating process. The first electrolytic-plating process is controlled such that an average thickness of plating is from about 0.5 to about 1.0 .mu.m, and the second electrolytic-plating process is controlled such that an average thickness of plating is from about 0.5 to about 1.5 .mu.m.

Abstract translation: 至少部分地嵌入模制树脂块的金属插入物包括金属插入物坯料和在金属插入物坯料的表面上产生的大量镍或镍合金颗粒，并且颗粒的尺寸至多为1.0μm 。 通过第一电解电镀工艺处理金属插件坯料，使得大量的铜核扩散在表面上，铜核通过第二电镀法生长成镍或镍合金颗粒。 控制第一电解电镀工艺，使得镀层的平均厚度为约0.5至约1.0μm，并且第二电镀处理被控制为使得镀层的平均厚度为约0.5至约1.5μm 。

公开(公告)号：US4894752A

公开(公告)日：1990-01-16

申请号：US218882

申请日：1988-07-14

Applicant: Akihiko Murata ,  Toshihiko Shimada

Inventor： Akihiko Murata ,  Toshihiko Shimada

IPC: H01L23/50 ,  H01L23/495

CPC classification number: H01L23/49582 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48639 ,  H01L2224/48664 ,  H01L2224/48739 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48864 ,  H01L2224/49171 ,  H01L2224/85439 ,  H01L2224/85464 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12896

Abstract: A lead frame for a semiconductor device includes a metal strip made of copper or copper alloy having a plurality of wire bonding areas to which metal wires are directly connected by a direct bonding method. The wire bonding areas are electroplated with a thin silver film or a palladium film, so that formation of a copper oxidized film on the wire bonding area is substantially prevented.

Abstract translation: 用于半导体器件的引线框架包括由具有多个引线接合区域的铜或铜合金制成的金属带，金属线通过直接接合方法直接连接。 引线接合区域用薄的银膜或钯膜电镀，从而基本上防止了在引线接合区域上形成铜氧化膜。