公开(公告)号：US07471595B2

公开(公告)日：2008-12-30

申请号：US10960924

申请日：2004-10-12

Applicant: Eung-yeoul Yoon ,  Hyung Choi ,  Woong-lin Hwang ,  Jae-ho You

Inventor： Eung-yeoul Yoon ,  Hyung Choi ,  Woong-lin Hwang ,  Jae-ho You

IPC: G11B7/12

CPC classification number: G11B7/1263 ,  G11B7/08576 ,  G11B7/12 ,  G11B7/123 ,  G11B7/127 ,  G11B7/131 ,  G11B7/22

Abstract: A slim optical pickup in which a leaf spring is combined with an upper surface of a semiconductor substrate, which is a silicon optical bench (SiOB) monolithically manufactured with a photodetector. The slim optical pickup has a substrate including a light source for generating a light beam, an optical element to irradiate light to an optical disc, a photodetector for receiving a light beam reflected by the optical disc, and a plurality of first bonding pads; a heat sink attached to the surface of the substrate; and a supporting means having a plurality of second bonding pads formed on an inner side of an array of the plurality of the first bonding pads on the substrate.

Abstract translation: 一种薄型光学拾取器，其中板簧与半导体衬底的上表面组合，半导体衬底是用光电检测器单片制造的硅光学台架（SiOB）。 薄型光学拾取器具有包括用于产生光束的光源的基板，向光盘照射光的光学元件，用于接收由光盘反射的光束的光电检测器和多个第一接合焊盘; 连接到基板表面的散热片; 以及支撑装置，其具有形成在所述基板上的所述多个所述第一接合焊盘的阵列的内侧上的多个第二接合焊盘。

公开(公告)号：US20050169570A1

公开(公告)日：2005-08-04

申请号：US11033720

申请日：2005-01-13

Applicant: Yong-sung Kim ,  Seok-whan Chung ,  Jae-ho You ,  Hyung Choi ,  Woong-lin Hwang

Inventor： Yong-sung Kim ,  Seok-whan Chung ,  Jae-ho You ,  Hyung Choi ,  Woong-lin Hwang

IPC: H01S5/022 ,  G02B6/12 ,  G11B7/12 ,  G11B7/135 ,  G11B7/22

CPC classification number: G11B7/1362 ,  G11B7/123 ,  G11B7/22 ,  H01L2224/81 ,  H01S5/02248 ,  H01S5/02292

Abstract: A micro optical bench structure and a method of manufacturing a micro optical bench structure are provided. The micro optical bench structure includes: a lower substrate; an upper substrate which is bonded to the lower substrate, and has a through-hole for exposing the lower substrate; and a first optical device which is installed at the lower substrate, and units relating to the first optical device.

Abstract translation: 提供微型光学台架结构和制造微型光学台架结构的方法。 微型光学台架结构包括：下基板; 上基板，其结合到下基板，并具有用于使下基板曝光的通孔; 以及安装在下基板上的第一光学装置和与第一光学装置相关的单元。

公开(公告)号：US06589848B1

公开(公告)日：2003-07-08

申请号：US09614588

申请日：2000-07-12

Applicant: Woong-lin Hwang ,  Jun-young Kim

Inventor： Woong-lin Hwang ,  Jun-young Kim

IPC: H01L21331

CPC classification number: H01L31/035281 ,  H01L31/02161 ,  H01L31/022416 ,  H01L31/03529 ,  H01L31/105 ,  Y02E10/50

Abstract: A photodetector device and a process for manufacturing the same are described. The photodetector device comprises a doped semiconductor substrate; an intrinsic semiconductor material layer formed over the substrate, for absorbing incident light; an upper semiconductor material layer doped with the opposite type to the substrate, formed on a portion of the intrinsic semiconductor material layer to allow at least a portion of the incident light to directly enter the intrinsic semiconductor material layer; an upper electrode formed in a predetermined pattern on the upper semiconductor material layer, the upper electrode electrically connected to the upper semiconductor material layer; and a lower electrode electrically connected to the substrate, wherein a portion of the intrinsic semiconductor material layer constitutes at least a part of a photo-receiving surface. The photodetector device has a photo-receiving surface, which is formed by removing all or a portion of the upper semiconductor material layer within a photo-receiving area, which allows at least a portion of the incident light to directly enter the intrinsic semiconductor material layer, thereby reducing capacitance even with a relatively large photo-receiving surface.

Abstract translation: 对光检测器及其制造方法进行说明。 光检测器件包括掺杂半导体衬底; 在衬底上形成的用于吸收入射光的本征半导体材料层; 在本征半导体材料层的一部分上形成掺杂有与衬底相反类型的上半导体材料层，以允许至少一部分入射光直接进入本征半导体材料层; 在上半导体材料层上以预定图案形成的上电极，上电极与上半导体材料层电连接; 以及电连接到所述基板的下电极，其中所述本征半导体材料层的一部分构成光接收表面的至少一部分。 光检测器件具有光接收表面，该光接收表面通过去除光接收区域内的上半导体材料层的全部或一部分而形成，其允许入射光的至少一部分直接进入本征半导体材料层 ，从而即使用相对较大的光接收表面也能降低电容。

公开(公告)号：US08310023B2

公开(公告)日：2012-11-13

申请号：US12360444

申请日：2009-01-27

Applicant: Ho Joon Park ,  Woong Lin Hwang ,  Seog Moon Choi ,  Sung Jun Lee ,  Sang Hyun Choi ,  Chang Hyun Lim

Inventor： Ho Joon Park ,  Woong Lin Hwang ,  Seog Moon Choi ,  Sung Jun Lee ,  Sang Hyun Choi ,  Chang Hyun Lim

IPC: H01L23/52

CPC classification number: H01L33/641 ,  H01L33/46 ,  H01L2224/16225 ,  H01L2224/97

Abstract: The present invention provides an LED package and the fabrication method thereof. The present invention provides an LED package including a submount silicon substrate and insulating film and electrode patterns formed on the submount silicon substrate. The LED package also includes a spacer having a through hole, formed on the electrode patterns. The LED package further includes an LED received in the through hole, flip-chip bonded to the electrode patterns, and an optical element attached to the upper surface of the spacer.

Abstract translation: 本发明提供一种LED封装及其制造方法。 本发明提供了一种LED封装，其包括基座硅基板和绝缘膜以及形成在基座硅基板上的电极图案。 LED封装还包括形成在电极图案上的具有通孔的间隔物。 LED封装还包括接收在通孔中的LED，与芯片接合的倒装芯片，以及附着到间隔物的上表面的光学元件。

公开(公告)号：US07816156B2

公开(公告)日：2010-10-19

申请号：US11882167

申请日：2007-07-31

Applicant: Sang Hyun Choi ,  Woong Lin Hwang ,  Seog Moon Choi ,  Ho Joon Park ,  Sung Jun Lee ,  Chang Hyun Lim

Inventor： Sang Hyun Choi ,  Woong Lin Hwang ,  Seog Moon Choi ,  Ho Joon Park ,  Sung Jun Lee ,  Chang Hyun Lim

IPC: H01L29/22 ,  H01L23/498

CPC classification number: H01L33/641 ,  H01L33/486 ,  H01L33/642 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

Abstract: The present invention provides a light emitting diode (LED) package and the fabrication method thereof. The LED package includes a lower metal layer, and a first silicon layer, a first insulation layer, a second silicon layer, a second insulation layer, and a package electrode pattern formed in their order on the lower metal layer. The LED package also includes a spacer having a cavity, formed on the electrode pattern. The LED package further includes an LED mounted in the cavity by flip-chip bonding to the electrode patterns, and an optical element attached to the upper surface of the spacer.

Abstract translation: 本发明提供一种发光二极管（LED）封装及其制造方法。 LED封装包括下金属层，以及在下金属层上依次形成的第一硅层，第一绝缘层，第二硅层，第二绝缘层和封装电极图案。 LED封装还包括形成在电极图案上的具有空腔的间隔物。 LED封装还包括通过与电极图案倒装芯片接合而安装在腔中的LED以及附接到间隔件的上表面的光学元件。

公开(公告)号：US07649208B2

公开(公告)日：2010-01-19

申请号：US11313508

申请日：2005-12-21

Applicant: Sung Jun Lee ,  Woong Lin Hwang ,  Seog Moon Choi ,  Ho Joon Park ,  Sang Hyun Choi ,  Chang Hyun Lim

Inventor： Sung Jun Lee ,  Woong Lin Hwang ,  Seog Moon Choi ,  Ho Joon Park ,  Sang Hyun Choi ,  Chang Hyun Lim

IPC: H01L27/15

CPC classification number: H01L31/147 ,  H01L25/167 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2924/00014

Abstract: The present invention relates to an LED package including photo diode. The LED package includes a silicon substrate, and a photo diode is formed in an upper part thereof. Also, an insulation layer is formed on the silicon substrate excluding at least a light-receiving area of the photodiode. In the LED package, an LED terminal is formed on the insulation layer to be connected to the photo diode. First and second LED connecting pads are formed on the insulation layer, and arranged on both sides of the photo diode. In addition, an LED chip is mounted on the silicon substrate, and connected to the first and second LED connecting pads.

Abstract translation: 本发明涉及一种包括光电二极管的LED封装。 LED封装包括硅衬底，并且在其上部形成光电二极管。 而且，除了光电二极管的光接收面积以外，在硅基板上形成绝缘层。 在LED封装中，在绝缘层上形成LED端子以连接到光电二极管。 第一和第二LED连接焊盘形成在绝缘层上，并布置在光电二极管的两侧。 此外，LED芯片安装在硅衬底上，并连接到第一和第二LED连接焊盘。

公开(公告)号：US20070264744A1

公开(公告)日：2007-11-15

申请号：US11671746

申请日：2007-02-06

Applicant: Woong-lin Hwang ,  Hyung Choi ,  Jae-ho You ,  Yong-sung Kim

Inventor： Woong-lin Hwang ,  Hyung Choi ,  Jae-ho You ,  Yong-sung Kim

IPC: H01L21/00

CPC classification number: H01L31/14 ,  G11B7/123 ,  G11B7/131 ,  G11B7/1362 ,  G11B7/22 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: An optical bench is provided, as are a thin optical pickup that employs the optical bench, and a method of manufacturing the optical bench. The optical bench includes a light source for generating light for recording and reproducing information to and from an optical disc, a light source stand on which the light source is mounted, a mirror adjacent to the light source stand, and a bottom surface at a lower point than the light source stand and between the light source stand and the mirror surface. Sides of the light source stand besides the side facing the mirror are connected to the surface of the substrate by a flat sloped surface. Along the sloped surface, two electrodes for supplying power to the light source are connected to the light source stand. Since the metal wirings are formed along the sloped surface without trenches or windings between the light source stand and the silicon substrate, no disconnection of metal lines at a corner occurs.

Abstract translation: 提供了一种光学台，以及使用光学台的薄型光学拾取器以及制造光学台的方法。 光学台包括用于产生用于从光盘记录和再现信息的光的光源，安装有光源的光源支架，与光源支架相邻的反射镜，以及位于下部的底部表面 点比光源支架和光源支架和镜面之间的点。 除了面向镜的一侧之外，光源的侧面通过平坦的倾斜表面连接到基板的表面。 沿着倾斜的表面，用于向光源供电的两个电极连接到光源支架。 由于在光源支架和硅基板之间没有沟槽或绕组的倾斜表面形成金属布线，所以不会发生角落处的金属线断开。

公开(公告)号：US06791152B2

公开(公告)日：2004-09-14

申请号：US09792028

申请日：2001-02-26

Applicant: Woong-lin Hwang ,  Jun-young Kim ,  Dong-hoon Chang

Inventor： Woong-lin Hwang ,  Jun-young Kim ,  Dong-hoon Chang

IPC: H01L310232

CPC classification number: H01L31/105

Abstract: A photodetector device includes a doped semiconductor substrate. A first intrinsic semiconductor material layer, a main reflector, a second intrinsic semiconductor material layer, an upper semiconductor material layer, which is doped the opposite as the substrate, are formed in succession on the semiconductor substrate. An upper electrode is formed on and electrically connected with the upper semiconductor layer, and a lower electrode is electrically connected to the semiconductor substrate. One of the intrinsic semiconductor layers is relatively thin to absorb incident light, while the other is relatively thick. The photodetector device, a p-i-n photodetector, has an I region including the intrinsic semiconductor layers with different thicknesses, and a main reflector therebetween. The thickness of the entire I region can be increased with a reduced transit distance for holes. Thus, low driving voltage and high sensitivity to a high frequency optical signal requirements can be realized without reducing the size of the photo-receiving area.

Abstract translation: 光检测器件包括掺杂半导体衬底。 在半导体衬底上连续形成第一本征半导体材料层，主反射器，第二本征半导体材料层，与衬底相反掺杂的上半导体材料层。 上电极形成在上半导体层上并与上半导体层电连接，下电极与半导体衬底电连接。 本征半导体层之一相对较薄以吸收入射光，而另一个相对较厚。 光检测器器件p-i-n光检测器具有包括不同厚度的本征半导体层的I区域和它们之间的主反射器。 整个I区域的厚度可以随着孔的传输距离减小而增加。 因此，可以实现低驱动电压和对高频光信号要求的高灵敏度，而不减小光接收面积的大小。

公开(公告)号：US06470116B2

公开(公告)日：2002-10-22

申请号：US09836538

申请日：2001-04-18

Applicant: Jin-hwan Kim ,  Jong-kuk Mun ,  Woong-lin Hwang

Inventor： Jin-hwan Kim ,  Jong-kuk Mun ,  Woong-lin Hwang

IPC: G02B634

CPC classification number: H04B10/40

Abstract: A bidirectional signal transmission device using light which adopts a photodiode-incorporated vertical cavity surface emitting laser (VCSEL) as light devices so that signal transmission and reception between facing light devices is achieved via the same channel, is provided. This bidirectional signal transmission device includes first and second light devices having a VCSEL part and a photodiode part incorporated with the VCSEL part, at least one optical fiber installed between the first and second light devices, and diffraction elements installed between the first light device and the input/output port of the optical fiber and between the second light device and the output port of the optical fiber, respectively, for selectively diffracting incident light so that light output from the optical fiber is received by the photodiode part, so that a received light signal having a high S/N ratio can be detected.

Abstract translation: 提供了采用采用掺入光电二极管的垂直腔表面发射激光器（VCSEL）作为光器件的光的双向信号传输装置，使得通过相同的通道实现面对的光器件之间的信号传输和接收。 该双向信号传输装置包括具有VCSEL部分和与VCSEL部分结合的光电二极管部分的第一和第二光器件，安装在第一和第二光器件之间的至少一个光纤，以及安装在第一光器件与第二光器件之间的衍射元件 光纤的输入/输出端口和第二光器件与光纤的输出端口之间，用于选择性地衍射入射光，使得从光纤输出的光被光电二极管部分接收，使得接收的光 可以检测到具有高S / N比的信号。

公开(公告)号：US20090137073A1

公开(公告)日：2009-05-28

申请号：US12360444

申请日：2009-01-27

Applicant: Ho Joon PARK ,  Woong Lin Hwang ,  Seog Moon Choi ,  Sung Jun Lee ,  Sang Hyun Choi ,  Chang Hyun Lim

Inventor： Ho Joon PARK ,  Woong Lin Hwang ,  Seog Moon Choi ,  Sung Jun Lee ,  Sang Hyun Choi ,  Chang Hyun Lim

IPC: H01L33/00

CPC classification number: H01L33/641 ,  H01L33/46 ,  H01L2224/16225 ,  H01L2224/97

Abstract: The present invention provides an LED package and the fabrication method thereof. The present invention provides an LED package including a submount silicon substrate and insulating film and electrode patterns formed on the submount silicon substrate. The LED package also includes a spacer having a through hole, formed on the electrode patterns. The LED package further includes an LED received in the through hole, flip-chip bonded to the electrode patterns, and an optical element attached to the upper surface of the spacer.

Abstract translation: 本发明提供一种LED封装及其制造方法。 本发明提供了一种LED封装，其包括基座硅基板和绝缘膜以及形成在基座硅基板上的电极图案。 LED封装还包括形成在电极图案上的具有通孔的间隔物。 LED封装还包括接收在通孔中的LED，与芯片连接的倒装芯片，以及附着到间隔物的上表面的光学元件。