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    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution
    8.
    发明授权
    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution 失效
    使用有机化合物和基于氟化物的缓冲溶液制造半导体器件的方法

    公开(公告)号：US07365021B2

    公开(公告)日：2008-04-29

    申请号：US11122881

    申请日：2005-05-05

    申请人： Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    发明人： Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76808 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76829 ,  H01L21/76835

    摘要： Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.

    摘要翻译： 提供了用于制造半导体器件的方法，其包括以下步骤：在半导体衬底上依次形成金属互连和保护层; 在保护层上形成接触孔; 通过形成层叠在其上的成型层和蚀刻停止层来隔离接触孔; 在所述蚀刻停止层上形成牺牲层以填充所述接触孔; 形成具有开口的光致抗蚀剂层以暴露所述牺牲层，并且使得所述光致抗蚀剂层的开口与所述接触孔对齐; 在模制层中形成沟槽以穿透牺牲层和蚀刻停止层; 以及对具有沟槽的半导体衬底进行湿式蚀刻以去除光致抗蚀剂层和牺牲层，其中使用有机化合物和基于氟化物离子的缓冲溶液进行湿蚀刻步骤。

    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution
    10.
    发明申请
    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution 失效
    使用有机化合物和基于氟化物的缓冲溶液制造半导体器件的方法

    公开(公告)号：US20050260856A1

    公开(公告)日：2005-11-24

    申请号：US11122881

    申请日：2005-05-05

    申请人： Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    发明人： Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/76808 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76829 ,  H01L21/76835

    摘要： Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.

    摘要翻译： 提供了用于制造半导体器件的方法，其包括以下步骤：在半导体衬底上依次形成金属互连和保护层; 在保护层上形成接触孔; 通过形成层叠在其上的成型层和蚀刻停止层来隔离接触孔; 在所述蚀刻停止层上形成牺牲层以填充所述接触孔; 形成具有开口的光致抗蚀剂层以暴露所述牺牲层，并且使得所述光致抗蚀剂层的开口与所述接触孔对齐; 在模制层中形成沟槽以穿透牺牲层和蚀刻停止层; 以及对具有沟槽的半导体衬底进行湿式蚀刻以去除光致抗蚀剂层和牺牲层，其中使用有机化合物和基于氟化物离子的缓冲溶液进行湿蚀刻步骤。