摘要:
The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
摘要:
The present invention discloses a method for producing a mosaic diamond comprising implanting ions in the vicinity of the surfaces of a plurality of single-crystal diamond substrates arranged in the form of a mosaic, or in the vicinity of the surfaces of mosaic single-crystal diamond substrates whose back surfaces are bonded by a single-crystal diamond layer, so as to form non-diamond layers; growing a single-crystal diamond layer by a vapor-phase synthesis method; and separating the single-crystal diamond layer above the non-diamond layers by etching the non-diamond layers. The method of the present invention prevents the destruction of single-crystal diamond substrates by using a process that is simpler than conventional methods, thus allowing a large quantity of mosaic diamond to be produced in a stable and efficient manner.
摘要:
The invention provides a process for producing a single-crystal substrate with an off-angle, which comprises using, as a substrate, a material capable of epitaxial growth by a vapor-phase synthesis method, whose surface has an off-angle with respect to a crystal plane capable of epitaxial growth; implanting ions into the substrate having a surface with an off-angle to form a layer with a deteriorated crystal structure near the surface of the substrate; growing a crystal on the surface with an off-angle of the substrate by a vapor-phase synthesis method; and separating a grown crystal layer from the substrate. In accordance with the process of the invention, when producing off-substrates usable in vapor-phase synthesis of single crystals, the manufacturing costs can be reduced, and substrates with an identical off-angle can be produced easily and in large quantities.
摘要:
The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
摘要:
A cantilever for measuring intra-cellular and inter-cellular microspaces of the present invention includes a support portion, a lever portion provided to the support portion so as to protrude therefrom, and a probe portion provided near a free end of the lever portion. The probe portion includes a conductive probe made of a carbon-based material, and an insulating film to coat a periphery of the conductive probe.
摘要:
In a semiconductor diamond device, there is provided an ohmic electrode that is chemically, and thermally stable, and is excellent in respect of low contact resistance, and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni, and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy, or the nickel-chromium compound, it is improved in characteristics.
摘要:
The present invention directed to a SAW device comprising a diamond layer a ZnO layer and an SiO.sub.2 layer, which can be operated at the frequency of 2 GHz or higher, with superior durability and less energy loss. The SAW device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: (i) a diamond layer, (ii) a ZnO layer formed on the diamond layer, the ZnO layer having a thickness t.sub.z, (iii) an interdigital transducer (IDT) formed over the ZnO layer, and (iv) a SiO.sub.2 layer formed over the interdigital transducer onto the ZnO layer, the SiO.sub.2 layer having a thickness of t.sub.s ; wherein parameters kh.sub.z =(2.pi./.lambda.)t.sub.z and kh.sub.s =(2.pi./.lambda.)t.sub.s are given within a region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A in a two-dimensional Cartesian coordinate graph having abscissa axis of kh.sub.z and ordinate axis of kh.sub.s, the outer edge of the region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q and R and lines A-B, B-C, C-D, D-E, E-F, F-G, G-H, H-I, I-J, J-K, K-L, L-M, M-N, N-O, O-P, P-Q, Q-R and R-A, as shown in FIG. 1.
摘要:
A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要:
A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要:
In a semiconductor diamond device, there is provided an ohmic electrode that is chemically and thermally stable and has an excellent low contact resistance and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy or compound, it is improved in characteristics.