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    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF 失效
    半导体光电设备及其制造方法

    公开(公告)号：US20110031578A1

    公开(公告)日：2011-02-10

    申请号：US12838444

    申请日：2010-07-17

    申请人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L31/10 ,  H01L31/18

    CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

    摘要翻译： 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体光电设备及其制造方法

    公开(公告)号：US20110031529A1

    公开(公告)日：2011-02-10

    申请号：US12838445

    申请日：2010-07-17

    申请人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/10

    CPC分类号： H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

    摘要翻译： 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

    Semiconductor photodiode device and manufacturing method thereof
    4.
    发明授权
    Semiconductor photodiode device and manufacturing method thereof 有权
    半导体光电二极管装置及其制造方法

    公开(公告)号：US08294213B2

    公开(公告)日：2012-10-23

    申请号：US12838445

    申请日：2010-07-17

    申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L27/12

    CPC分类号： H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

    摘要翻译： 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

    Optical waveguides and optical devices with optical waveguides
    6.
    发明授权
    Optical waveguides and optical devices with optical waveguides 失效
    具有光波导的光波导和光学器件

    公开(公告)号：US06931189B2

    公开(公告)日：2005-08-16

    申请号：US10321506

    申请日：2002-12-18

    申请人： Youngkun Lee ,  Kazuhiko Hosomi ,  Toshio Katsuyama ,  Tatsuya Tomaru

    发明人： Youngkun Lee ,  Kazuhiko Hosomi ,  Toshio Katsuyama ,  Tatsuya Tomaru

    IPC分类号： G02B6/30 ,  G02B6/02 ,  G02B6/12 ,  G02B6/122 ,  G02B6/14 ,  G02B6/10 ,  G02B6/26

    CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B6/1228 ,  G02B6/14 ,  G02B6/30

    摘要： The invention provides an optical waveguide for enabling the reduction of a coupling loss caused by difference in the size of a mode field diameter between optical waveguide modes different in the mode field diameter and a coupling loss caused by reflection on a boundary caused by the difference of media and an optical device using it. Structure provided with a mode field diameter converter provided with an antireflection part required to reduce a coupling loss between a microoptical circuit and a single mode optical fiber is integrally produced using effective refractive index control based upon photonic crystal structure.

    摘要翻译： 本发明提供了一种光波导，其能够减少由模场直径不同的光波导模之间的模场直径尺寸的差异引起的耦合损耗和由边界上的反射引起的边界反射引起的耦合损耗 媒体和使用它的光学设备。 提供了具有减小微光电路和单模光纤之间的耦合损耗所需的抗反射部件的模场直径转换器的结构，是使用基于光子晶体结构的有效折射率控制而一体化的。

    Semiconductor photodiode device and manufacturing method thereof
    7.
    发明授权
    Semiconductor photodiode device and manufacturing method thereof 失效
    半导体光电二极管装置及其制造方法

    公开(公告)号：US08350301B2

    公开(公告)日：2013-01-08

    申请号：US12838444

    申请日：2010-07-17

    申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

    摘要翻译： 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

    Broad band semiconductor optical amplifier module having optical amplifiers for amplifying demutiplexed signals of different wavelengths and optical communication system using it
    8.
    发明授权
    Broad band semiconductor optical amplifier module having optical amplifiers for amplifying demutiplexed signals of different wavelengths and optical communication system using it 失效
    宽带半导体光放大器模块具有用于放大不同波长的复用信号的光放大器和使用它的光通信系统

    公开(公告)号：US06400864B1

    公开(公告)日：2002-06-04

    申请号：US09655827

    申请日：2000-09-06

    申请人： Youngkun Lee

    发明人： Youngkun Lee

    IPC分类号： G02B628

    CPC分类号： G02B6/12011 ,  G02B6/12021 ,  H01S5/026 ,  H01S5/0268 ,  H01S5/4025 ,  H01S5/4068 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/2914 ,  H04B10/294 ,  H04B2210/258 ,  H04J14/02

    摘要： A semiconductor optical amplifier module comprises: a demultiplexer made of a semiconductor material to separate an optical input signal containing a plurality of wavelength components into a plurality of demultiplexed signals, each of the demultiplexed signals having a different one of the wavelength component; a plurality of semiconductor optical amplifiers each optically coupled to the demultiplexer to amplify a corresponding one of the demultiplexed signals; and a multiplexer made of the semiconductor material and optically coupled to the plurality of semiconductor optical amplifiers to combine the demultiplexed signals amplified by the semiconductor optical amplifiers to produce a multiplexed signal. The demultiplexer, the semiconductor amplifiers and the multiplexer are integrated on a single semiconductor substrate. The demultiplexer and the multiplexer may be implemented by arrayed waveguide diffraction grating structures, and the semiconductor optical amplifiers may be implemented by a semiconductor quantum well structure having well widths ranging from a minimum value to a maximum value. The semiconductor optical amplifiers can provide a gain wavelength bandwidth of 80-800 nm.

    摘要翻译： 半导体光放大器模块包括：由半导体材料制成的解复用器，用于将包含多个波长分量的光输入信号分离成多个解复用信号，每个解复用信号具有不同的波长分量; 多个半导体光放大器，每个光耦合到所述解复用器以放大所述解复用的信号中的对应的一个; 以及由所述半导体材料制成并且光耦合到所述多个半导体光放大器以将由所述半导体光放大器放大的解复用信号组合以产生多路复用信号的多路复用器。 解复用器，半导体放大器和多路复用器集成在单个半导体衬底上。 解复用器和多路复用器可以通过阵列波导衍射光栅结构来实现，并且半导体光放大器可以通过半导体量子阱结构来实现，其宽度范围从最小值到最大值。 半导体光放大器可以提供80-800nm的增益波长带宽。