公开(公告)号：US20040171216A1

公开(公告)日：2004-09-02

申请号：US10762520

申请日：2004-01-23

申请人： Tadahiro Ohmi

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa

IPC分类号： H01L021/336

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

公开(公告)号：US20040017496A1

公开(公告)日：2004-01-29

申请号：US10622540

申请日：2003-07-21

发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

IPC分类号： H04N005/335

CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

摘要： In a solid state image pickup device, in order to form a bypass region with precisely controlled impurity concentration and width, there is provided a solid state image pickup device comprising a photoelectric conversion unit composed of a first region of a first conductive type formed on a semiconductor substrate and having a principal surface, a second region of a second conductive type formed in the first region, and a third region of the first conductive type present between the second region and the principal surface, a fourth region of the second conductive type formed in the first region, and a charge transfer unit including the first region, an insulation layer on the first region and a control electrode provided on the insulation layer, for transferring a signal charge accumulated in the photoelectric conversion unit, to the fourth region, wherein the photoelectric conversion unit and the charge transfer unit are connected through a fifth region of the second conductive type.

摘要翻译： 在固态图像拾取装置中，为了形成具有精确控制的杂质浓度和宽度的旁路区域，提供了一种固态图像拾取装置，其包括光电转换单元，该光电转换单元由形成在第一导电类型的第一导电类型的第一区域 半导体基板，具有主表面，形成在第一区域中的第二导电类型的第二区域和存在于第二区域和主表面之间的第一导电类型的第三区域，形成第二导电类型的第四区域 在所述第一区域中，以及电荷转移单元，所述电荷转移单元包括所述第一区域，所述第一区域上的绝缘层和设置在所述绝缘层上的控制电极，用于将累积在所述光电转换单元中的信号电荷转移到所述第四区域，其中 光电转换单元和电荷转移单元通过第二导电类型的第五区连接。

公开(公告)号：US20020138530A1

公开(公告)日：2002-09-26

申请号：US10088603

申请日：2002-03-19

发明人： Tadahiro Ohmi ,  Satoshi Sakaidani ,  Naoto Miyamoto ,  Akira Nakada ,  Shigetoshi Sugawa

IPC分类号： G06F007/38

CPC分类号： G06F7/503 ,  G06F7/00 ,  H03K19/1736

摘要： There can be provided a variable function information processor in which a logic module (10) with the further decreased number of transistors used in the logic module constituting the variable function information processor is provided, a function of being able to realize both a combinational logic circuit for-performing a full addition operation of input signals in accordance with a control signal and outputting the sum and a sequential circuit for temporarily holding the input signal to delay the signal and outputting it by the same logic module is provided, and in a semiconductor circuit element group for constituting the combinational logic circuit and the sequential circuit, a common part of the combinational logic circuit and the sequential circuit is used for both the circuits, whereby the number of elements can be further decreased, and the resources of the variable function information processor can be effectively exploited.

摘要翻译： 可以提供一种可变功能信息处理器，其中提供了在构成可变功能信息处理器的逻辑模块中使用的晶体管数量进一步减少的逻辑模块（10），能够实现组合逻辑电路 根据控制信号执行输入信号的全加法运算，并输出该和和一个用于临时保持输入信号的时序电路以延迟信号并由相同的逻辑模块输出信号，并且在半导体电路 用于构成组合逻辑电路和顺序电路的元件组，组合逻辑电路和顺序电路的公共部分用于两个电路，由此可以进一步减少元件的数量，并且可变功能信息的资源 处理器可以有效利用。

公开(公告)号：US20020040847A1

公开(公告)日：2002-04-11

申请号：US09867767

申请日：2001-05-31

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa

IPC分类号： C23C016/00 ,  C23C014/32 ,  C23C016/22 ,  C23C016/34 ,  C23C016/48

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

摘要翻译： 形成绝缘膜的方法包括以下步骤：在基板上形成绝缘膜，并通过将绝缘膜暴露于由等离子体形成的原子态氧O *或原子状态的氮化氢基NH *，来改善绝缘膜的膜质量 使用Kr或Ar作为惰性气体。

公开(公告)号：US20040134613A1

公开(公告)日：2004-07-15

申请号：US10296619

申请日：2002-11-26

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L021/306

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.

摘要翻译： 在使用径向线缝隙天线的微波等离子体处理装置中，槽板（16）由热膨胀率接近波形延迟板（18）的材料形成，或者在构成 波长延迟板（18）。 波长相对板与构成微波辐射面的槽板之间的紧密接触被改善，以防止异常放电。

公开(公告)号：US20040108575A1

公开(公告)日：2004-06-10

申请号：US10725063

申请日：2003-12-02

申请人： Tadahiro OHMI

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

IPC分类号： H01L029/04 ,  H01L031/036

CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。

公开(公告)号：US20040042307A1

公开(公告)日：2004-03-04

申请号：US10451925

申请日：2003-06-27

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama ,  Yasuyuki Shirai

IPC分类号： G11C011/34

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/2822 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

摘要翻译： 在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于 第一惰性气体等离子体。 此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有 构成气体分子的元素在硅气体的表面上。

公开(公告)号：US20020025691A1

公开(公告)日：2002-02-28

申请号：US09867699

申请日：2001-05-31

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

摘要翻译： 闪存器件的制造方法包括在Kr的混合气体和氧化气体或氮化气体中的高密度等离子体的微波激发。 所得到的原子态氧O *或氮化氢自由基NH *用于多晶硅电极表面的氮化或氧化。 还公开了根据这种等离子体处理在多晶硅膜上形成氧化物膜和氮化物膜的方法。

公开(公告)号：US20040217701A1

公开(公告)日：2004-11-04

申请号：US10809755

申请日：2004-03-25

发明人： Yoshifumi Kato ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akihiro Morimoto

IPC分类号： H05B033/00

CPC分类号： G02F1/133385 ,  G02F1/133603 ,  H01L23/38 ,  H01L27/14658 ,  H01L51/529 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A liquid crystal display including a liquid crystal panel and an organic EL device, which functions as a backlight. The organic EL device includes a Peltier element, which functions as a substrate, and an organic EL element formed on the Peltier element. The organic EL element includes an organic EL layer and first and second electrodes, which sandwich the organic EL layer. The first electrode is shared with a metal layer, which is a heat absorbing electrode of the Peltier element. The second electrode is formed from ITO, which transmits visible light. Light emitted from the organic EL element exits from the second electrode. As a result, the organic EL device is thin and has a superior cooling effect.

摘要翻译： 一种液晶显示器，包括用作背光源的液晶面板和有机EL器件。 有机EL器件包括用作衬底的珀尔帖元件和形成在珀尔帖元件上的有机EL元件。 有机EL元件包括有机EL层和夹着有机EL层的第一和第二电极。 第一电极与作为珀耳帖元件的吸热电极的金属层共享。 第二电极由透明可见光的ITO形成。 从有机EL元件发射的光从第二电极排出。 结果，有机EL器件薄且具有优异的冷却效果。

公开(公告)号：US20040118834A1

公开(公告)日：2004-06-24

申请号：US10473062

申请日：2003-09-26

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H05B006/64

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.

摘要翻译： 公开了一种微波等离子体处理装置，其能够在等离子体处理的压力下实现快速容易的等离子体点火。在微波等离子体处理装置中，提供等离子体点火促进单元以促进由微波引起的等离子体点火。 等离子体点火促进单元包括发射真空紫外线的氘灯和允许真空紫外线穿透和照射等离子体激发空间的透射窗。 传输窗是凸透镜，聚焦真空紫外线以增强等离子体激发气体的离子化。 通过这样的结构，能够容易且快速地引起等离子体点火。