公开(公告)号：US20040221809A1

公开(公告)日：2004-11-11

申请号：US10861388

申请日：2004-06-07

申请人： ,  Tokyo Electron Limited

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C016/00

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

摘要翻译： 在微波等离子体处理装置中，在介电材料喷淋板103和主要为惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出。 高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。 优化了微波引入部分的电介质材料分离壁102和电介质材料中的每一个的厚度，以使等离子体激发效率最大化，并且同时，缝隙天线110与电介质材料分离之间的距离 电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

公开(公告)号：US20040149680A1

公开(公告)日：2004-08-05

申请号：US10700466

申请日：2003-11-05

发明人： Tadahiro Ohmi

IPC分类号： H05H001/24 ,  H01B013/00

CPC分类号： H01L27/1214 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L29/4908 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.

公开(公告)号：US20040134613A1

公开(公告)日：2004-07-15

申请号：US10296619

申请日：2002-11-26

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L021/306

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.

摘要翻译： 在使用径向线缝隙天线的微波等离子体处理装置中，槽板（16）由热膨胀率接近波形延迟板（18）的材料形成，或者在构成 波长延迟板（18）。 波长相对板与构成微波辐射面的槽板之间的紧密接触被改善，以防止异常放电。

公开(公告)号：US20040108575A1

公开(公告)日：2004-06-10

申请号：US10725063

申请日：2003-12-02

申请人： Tadahiro OHMI

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

IPC分类号： H01L029/04 ,  H01L031/036

CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。

公开(公告)号：US20040042307A1

公开(公告)日：2004-03-04

申请号：US10451925

申请日：2003-06-27

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama ,  Yasuyuki Shirai

IPC分类号： G11C011/34

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/2822 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

摘要翻译： 在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于 第一惰性气体等离子体。 此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有 构成气体分子的元素在硅气体的表面上。

公开(公告)号：US20040029339A1

公开(公告)日：2004-02-12

申请号：US10407549

申请日：2003-04-04

发明人： Naoko Yamamoto ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H01L021/8238

CPC分类号： H01J37/32192

摘要： Provided are a plasma processing apparatus and a plasma processing method capable of improving uniformity of plasma processing without increasing a necessary output of a power supply. A plasma processing apparatus includes: a processing chamber performing processing using a plasma; and three or more electromagnetic wave introducing parts connected to the processing chamber to introduce into the processing chamber an electromagnetic wave for driving a reaction gas supplied into the processing chamber into a plasma state, wherein of combinations of every two adjacent ones of said three or more electromagnetic wave introducing means located in a region adjacent to said processing chamber, a distance between the two adjacent electromagnetic wave introducing means forming one of said combinations is different from a distance between the two adjacent electromagnetic wave introducing means forming another one of said combinations.

摘要翻译： 提供能够提高等离子体处理的均匀性而不增加电源的必要输出的等离子体处理装置和等离子体处理方法。 等离子体处理装置包括：处理室，其使用等离子体进行处理; 以及连接到处理室的三个或更多个电磁波引入部分，以将供应到处理室中的反应气体驱动到等离子体状态的电磁波，以将所述三个或更多个中的每两个相邻的组合引入处理室 电磁波引入装置位于与所述处理室相邻的区域中，形成所述组合之一的两个相邻的电磁波引入装置之间的距离不同于形成另一个所述组合的两个相邻的电磁波引入装置之间的距离。

公开(公告)号：US20030197231A1

公开(公告)日：2003-10-23

申请号：US10431841

申请日：2003-05-07

申请人： Seiko Epson Corporation ,  Tadahiro OHMI

发明人： Tadahiro Ohmi ,  Hiroyuki Shimada

IPC分类号： H01L029/76

CPC分类号： H01L21/84 ,  H01L27/12

摘要： A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion layers, a gate insulation layer at least formed on the channel region, and agate electrode formed on the gate insulation layer. The gate electrode includes a tantalum nitride layer in a region in contact with at least the gate insulation layer. The semiconductor device exhibits high current drive capability and can be manufactured at high yield.

摘要翻译： 半导体器件包括NMOSFET和PMOSFET。 每个MOSFET包括用于形成在SOI衬底等的硅层中形成的源极区和漏极区的第一和第二杂质扩散层，形成在第一和第二杂质扩散层之间的沟道区，栅极绝缘层 至少形成在沟道区上，以及形成在栅绝缘层上的玛瑙电极。 栅电极在与至少栅极绝缘层接触的区域中包括氮化钽层。 该半导体器件具有高电流驱动能力并且可以高产率制造。

公开(公告)号：US20030137249A1

公开(公告)日：2003-07-24

申请号：US10348934

申请日：2003-01-21

申请人： ALPS ELECTRIC CO., LTD.

发明人： Akira Nakano ,  Tadahiro Ohmi

IPC分类号： H01J007/24

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma processing apparatus has a plasma processing chamber that accommodates an electrode pair of a plasma excitation electrode for exciting plasma and a susceptor electrode facing the plasma excitation electrode, a workpiece to be treated being placed therebetween. The apparatus also has a chassis that accommodates an impedance matching circuit, provided in the middle of a supply path for feeding RF power from an RF generator to the plasma excitation electrode, for matching the impedance between the RF generator and the plasma processing chamber. In the chassis, impedances are axisymmetrically equal at a predetermined frequency with respect to the direction of a high-frequency current returning to the RF generator. The matching circuit has at least two inductance coils connected in parallel.

摘要翻译： 等离子体处理装置具有等离子体处理室，其容纳用于激发等离子体的等离子体激励电极的电极对和面向等离子体激励电极的基座电极，待处理的工件被放置在其间。 该装置还具有容纳阻抗匹配电路的底座，该阻抗匹配电路设置在用于将来自RF发生器的RF功率馈送到等离子体激励电极的供电路径的中间，用于匹配RF发生器和等离子体处理室之间的阻抗。 在机箱中，阻抗相对于返回到RF发生器的高频电流的方向以预定的频率轴对称相等。 匹配电路具有并联的至少两个电感线圈。

公开(公告)号：US20020076367A1

公开(公告)日：2002-06-20

申请号：US10020274

申请日：2001-12-18

发明人： Toshiaki Hongoh ,  Tetsu Osawa ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： B01J019/08

CPC分类号： H01J37/32266 ,  C23C16/511 ,  H01J37/32192

摘要： A plasma processing apparatus includes a process chamber, an insulating plate airtightly attached to the ceiling of the process chamber, a mount base placed in the process chamber for mounting thereon a workpiece to be processed, a planar antenna member placed above the insulating plate and including a microwave radiation hole for transmitting therethrough microwave used for generating plasma, the microwave transmitted through the insulating plate into the process chamber, and a wave-delay member placed above the planar antenna member for reducing the wavelength of microwave. The insulating plate has its peripheral end formed into an uneven shape with depressions and protrusions for causing, reflected waves of the microwave propagated through the insulating plate from the center and in the radial direction of the insulating plate, to cancel out each other.

摘要翻译： 一种等离子体处理装置，包括处理室，密封地附着在处理室的天花板上的绝缘板，放置在处理室中的安装基座，用于在其上安装待处理的工件，设置在绝缘板上方的平面天线构件， 微波辐射孔，用于传输通过用于产生等离子体的微波，通过绝缘板传输到处理室中的微波;以及波延迟构件，放置在平面天线构件上方，用于降低微波的波长。 绝缘板的周端形成为具有凹凸的凹凸形状，从绝缘板的中心部和半径方向引起的绝缘板的微波的反射波相互抵消。

公开(公告)号：US20020025691A1

公开(公告)日：2002-02-28

申请号：US09867699

申请日：2001-05-31

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

摘要翻译： 闪存器件的制造方法包括在Kr的混合气体和氧化气体或氮化气体中的高密度等离子体的微波激发。 所得到的原子态氧O *或氮化氢自由基NH *用于多晶硅电极表面的氮化或氧化。 还公开了根据这种等离子体处理在多晶硅膜上形成氧化物膜和氮化物膜的方法。