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1.发明授权Method and system for assessing the operating condition of a pressure regulator in a corrosive gas distribution system 失效评估腐蚀性气体分配系统中压力调节器运行状况的方法和系统
公开(公告)号：US5677480A
公开(公告)日：1997-10-14
申请号：US393684
申请日：1995-02-24
CPC分类号： G01M3/2876
摘要： A method of detecting a malfunction or failure of a pressure regulator in a corrosive or reactive gas distribution system while in use involves continuously measuring or monitoring the output pressure of the pressure regulator, both in the presence and the absence of gas flow. The onset of a malfunction of the pressure regulator can be predicted when the differential output pressure between flowing and non-flowing gas fluctuates highly and increases gradually. Failure of the pressure regulator or of the total system is detected when the differential output pressure in the presence and absence of flowing gas exceeds some experimentally determined value.
摘要翻译： 在使用中检测腐蚀性或反应性气体分配系统中的压力调节器的故障或故障的方法包括在存在和不存在气体流动的情况下连续测量或监测压力调节器的输出压力。 当流动和不流动的气体之间的差分输出压力高度波动并逐渐增加时，可以预测压力调节器故障的开始。 当存在和不存在流动气体时的差压输出压力超过一定的实验值时，可以检测到压力调节器或整个系统的故障。
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公开(公告)号：US5299731A
公开(公告)日：1994-04-05
申请号：US47554
申请日：1993-02-22
CPC分类号： B23K9/164 , B23K35/383 , B23K35/3086
摘要： A process for welding stainless steel tubing in the presence of an inert gas comprising a silicon base gas, in particular silane SiH.sub.4. During the welding operation, a suitable quantity of silicon is deposited by chemical vapor deposition at the weld joint to significantly improve the corrosion resistance of the weld.
摘要翻译： 在包含硅基气体，特别是硅烷SiH 4的惰性气体的存在下焊接不锈钢管的方法。 在焊接操作期间，通过化学气相沉积在焊接接头处沉积适量的硅，以显着提高焊缝的耐腐蚀性。
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3.发明授权Method of forming a silicon diffusion and/or overlay coating on the surface of a metallic substrate by chemical vapor deposition 失效通过化学气相沉积在金属基底的表面上形成硅扩散和/或覆盖涂层的方法
公开(公告)号：US5254369A
公开(公告)日：1993-10-19
申请号：US878465
申请日：1992-05-05
申请人： Juichi Arai , Eiichi Ozawa , Jean-Marie Friedt
发明人： Juichi Arai , Eiichi Ozawa , Jean-Marie Friedt
CPC分类号： C23C10/08 , C23C16/0209 , C23C16/24
摘要： The invention relates to a method of forming a silicon diffusion and/or overlay coating on the surface of a metallic substrate comprising the steps of introducing the sample into a cold wall Low Pressure Chemical Vapor Deposition (LPCVD) enclosure, evacuating the enclosure up to a pressure P.sub.1 which is lower than 0.5 Torr, maintaining said pressure P.sub.1 while heating up said sample to a temperature which is comprised between about room temperature and about 300.degree. C., bringing under same pressure P1 the sample to the CVD temperature comprised between about 50.degree. C. and 1000.degree. C., introducing a gas or gas mixture comprising at least one silicon hydride gas, maintaining the pressure inside the enclosure between about 0.1 and about 100 Torr, maintaining the introduction of said gas or gas mixture in the enclosure for deposition and/or diffusion of silicon on and/or through the surface of said metallic sample to obtain the desired thickness of the silicon diffusion and/or overlay coating, cooling down the sample to about room temperature and withdrawing said sample from said LPCVD enclosure. The substrate is preferably polished to obtain a mirror finish and then cleaned, either mechanically or chemically, with a solvent, or both.
摘要翻译： 本发明涉及一种在金属基底的表面上形成硅扩散和/或覆盖涂层的方法，包括以下步骤：将样品引入冷壁低压化学气相沉积（LPCVD）外壳中，将外壳排空至 压力P1低于0.5托，保持所述压力P1，同时将所述样品加热至约室温至约300℃之间的温度，使相同压力下的样品达到约50℃的CVD温度 导入包含至少一种氢化硅气体的气体或气体混合物，将外壳内的压力保持在约0.1至约100托之间，保持在外壳中引入所述气体或气体混合物 在所述金属样品的表面上和/或通过所述金属样品的表面沉积和/或扩散硅，以获得硅扩散和/或覆盖涂层的所需厚度， 将样品冷却至约室温，并从所述LPCVD封壳取出所述样品。 优选将基底抛光以获得镜面光洁度，然后用溶剂或两者机械地或化学地清洁。
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公开(公告)号：US5396039A
公开(公告)日：1995-03-07
申请号：US156817
申请日：1993-11-24
申请人： Henri Chevrel , Taeko Hattori , Hideki Takagi , Eiichi Ozawa , Jean-Marie Friedt
发明人： Henri Chevrel , Taeko Hattori , Hideki Takagi , Eiichi Ozawa , Jean-Marie Friedt
CPC分类号： B23K9/0286
摘要： A process to avoid or limit corrosion at the junction of two piping comprising devices welded together, said piping comprising devices being adapted to flow corrosive gases through them, said process comprising the steps of:a) providing a first piping comprising device and connecting it to an inert gas source;b) purging it with an inert gas comprising substantially not more than 10 ppb of an oxidizing gas selected from the group consisting of oxygen, carbon dioxide, water vapor or mixtures thereof, said inert gas flowing from a first opening to a second opening of said piping comprising device;c) providing a second pipe comprising device in flow communication with the first one, while continuing to purge the first piping comprising device;d) welding the two piping comprising devices, said welding being carried out under an inert gas atmosphere; ande) repeating steps c and d if necessary.
摘要翻译： 一种避免或限制在包括焊接在一起的装置的两个管道的接合处的腐蚀的过程，所述管道包括适于使腐蚀性气体通过它们的装置，所述方法包括以下步骤：a）提供包括装置的第一管道并将其连接到 惰性气源; b）用惰性气体吹扫，所述惰性气体基本上不超过10ppb的选自氧，二氧化碳，水蒸气或其混合物的氧化气体，所述惰性气体从第一开口流到所述 管道包括装置; c）提供包括与第一管流动连通的装置的第二管道，同时继续吹扫包括第一管道装置的第一管道; d）焊接包括装置的两个管道，所述焊接在惰性气体气氛下进行; 和e）如果需要，重复步骤c和d。
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5.发明授权Process for the elaboration of powders uniformly coated with ultrafine silicon-base particles using chemical vapor decomposition in the presence of core powders 失效用于在芯粉存在下使用化学气相分解制备均匀地涂覆有超细硅基颗粒的粉末的方法
公开(公告)号：US5298296A
公开(公告)日：1994-03-29
申请号：US7362
申请日：1993-01-21
CPC分类号： C23C16/4417 , B01J2/006 , B01J2/04 , C04B41/009 , C04B41/5096 , C23C16/442
摘要： A process for coating powders with ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof, entailing:a) introducing a reactant gas into a bed of core powders, thereby uniformly suspending the core powders in the reactant gas,b) entraining the uniformly suspended core powders into a chemical vapor deposition (CVD) reactor,c) selectively forming ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof in the gas phase by homogeneous deposition of the reactant gas, while minimizing core powder growth by CVD at surfaces of suspended core powders, andd) coating the core powders with the ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof, by introducing hot inert gas into the uniformly suspended core powders in the reactant gas.
摘要翻译： 用硅，氧化硅，氮化硅或其合金的超微粒子涂覆粉末的方法，包括：a）将反应气体引入核心粉末床中，从而将核心粉末均匀地悬浮在反应气体中，b）夹带 均匀悬浮的核心粉末进入化学气相沉积（CVD）反应器，c）通过均匀沉积反应气体，在气相中选择性地形成硅，氧化硅，氮化硅或其合金的超细颗粒，同时使通过CVD的芯粉生长最小化 并且d）通过将热惰性气体引入到反应气体中的均匀悬浮的核心粉末中，并用硅，氧化硅，氮化硅或其合金的超细颗粒涂覆芯粉。
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公开(公告)号：US5055246A
公开(公告)日：1991-10-08
申请号：US643490
申请日：1991-01-22
申请人： Pierre Jalby , Pierre Claverie , Frederic Rotman , Masao Kimura , Jean-Marie Friedt , Juichi Arai
发明人： Pierre Jalby , Pierre Claverie , Frederic Rotman , Masao Kimura , Jean-Marie Friedt , Juichi Arai
IPC分类号： C23C14/34 , C23C16/42 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3414 , C23C16/42
摘要： The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.
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公开(公告)号：US5894742A
公开(公告)日：1999-04-20
申请号：US931639
申请日：1997-09-16
申请人： Jean-Marie Friedt
发明人： Jean-Marie Friedt
IPC分类号： B01J4/00 , F17C7/04 , H01L21/205 , F17C9/02
CPC分类号： F17C7/04 , F17C2205/0332 , F17C2205/0338 , F17C2221/014 , F17C2221/016 , F17C2221/017 , F17C2221/05 , F17C2223/0153 , F17C2225/0123 , F17C2227/0362 , F17C2227/045 , F17C2250/0636 , F17C2260/036 , F17C2270/0518
摘要： Methods and systems of delivering ultra-high purity gas to a point of use are claimed and described. The methods include providing a source of ultra-high purity liquid (the source preferably at a pressure and temperature sufficient to maintain the liquid in substantially the liquid phase); transporting (preferably via pressure in the source alone) the ultra-high purity liquid from the source to one or more means to effect a phase change of the ultra-high purity liquid to an ultra-high purity gas; effecting a phase change (preferably at or near equilibrium vaporization conditions) of the ultra-high purity liquid to form an ultra-high purity gas in the one or more means to effect the phase change; and routing the ultra-high purity gas from the means to effect the phase change to a point of use (preferably with no intermediate, potentially impurity-generating media between the means to effect the phase change and the point of use other than ultra-clean conduit).
摘要翻译： 要求和描述将超高纯度气体输送到使用点的方法和系统。 所述方法包括提供超高纯度液体源（优选在足以将液体维持在基本上为液相的压力和温度下）的源; 优选通过源中的压力将来自源的超高纯度液体输送到使超高纯度液体相变为超高纯度气体的一种或多种手段; 在该一种或多种手段中进行超高纯度液体的相变（优选处于或接近平衡蒸发条件）以形成超高纯度气体以实现相变; 并且将来自该装置的超高纯度气体路由到实现相变的使用点（优选地，在实现相变的手段和除了超清洁之外的使用点之间没有中间的潜在的杂质生成介质 导管）。
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8.发明授权
公开(公告)号：US5676762A
公开(公告)日：1997-10-14
申请号：US506867
申请日：1995-07-25
CPC分类号： B08B9/032 , B08B9/00 , B08B9/0321 , B08B9/0323 , F17C9/00
摘要： A process for reducing corrosion in a gas distribution network of ultra high purity gas or any part of said distribution network, including: (a) Wet cleaning the gas distribution network or at least one part thereof with a wet cleaning agent, (b) Liquid drying the gas distribution network or the at least one part thereof with an H.sub.2 O desorbing liquid drying agent selected from the group consisting of acetone dimethylacetal DMP, 2.2 dichloropropane DCP or 2.2 dibromopropane DBP, mixtures thereof and any equivalent thereof, (c) purging said gas distribution network or any part thereof with a dry high purity gas comprising less than 1 ppm of any impurity, and (d) evacuating the gas distribution network or any part thereof at a pressure which is lower than 5.times.10.sup.4 Pascal (e) exposing the gas distribution network or any part thereof to an atmosphere including an ultra high purity corrosive gas or air.
摘要翻译： 一种用于减少超高纯度气体或所述分配网络的任何部分的气体分配网络中的腐蚀的方法，包括：（a）用湿式清洁剂湿气清洁气体分配网络或其至少一部分，（b）液体 用选自丙酮二甲基缩醛DMP，2.2二氯丙烷DCP或2.2二溴丙烷DBP，其混合物和其任何等同物的H 2 O解吸液体干燥剂干燥气体分配网络或其至少一部分，（c）吹扫所述气体 分配网络或其任何部分具有包含小于1ppm的任何杂质的干燥高纯度气体，以及（d）以低于5×104帕斯卡的压力（e）将气体分布网络或其任何部分抽空（e） 网络或其任何部分到包括超高纯度腐蚀性气体或空气的气氛中。
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公开(公告)号：US5230847A
公开(公告)日：1993-07-27
申请号：US718984
申请日：1991-06-21
申请人： Pierre Jalby , Pierre Claverie , Frederic Rotman , Masao Kimura , Jean-Marie Friedt , Juichi Arai
发明人： Pierre Jalby , Pierre Claverie , Frederic Rotman , Masao Kimura , Jean-Marie Friedt , Juichi Arai
CPC分类号： C23C16/42 , C23C16/01 , C23C16/14 , Y10T29/49982
摘要： The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.
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10.发明授权公开(公告)号：US06328801B1
公开(公告)日：2001-12-11
申请号：US09019781
申请日：1998-02-06
IPC分类号： B05C1100
CPC分类号： B01D53/04 , B01D2253/108 , B01D2253/112 , B01D2258/0216 , Y02C20/10 , Y10S55/30 , Y10S118/90 , Y10S261/27
摘要： Provided is a novel method of and system for recovering and recirculating a deuterium-containing gas. According to the inventive method, a deuterium-containing feed gas is introduced into a chamber. An exhaust gas containing deuterium is removed from the chamber. The deuterium concentration of the exhaust gas is adjusted to a predetermined value, thereby producing a concentration-adjusted gas stream. Finally, the concentration-adjusted gas stream is introduced into the chamber as the deuterium-containing feed gas. The invention makes the use of deuterium, for example, in the mass production of semiconductor devices, commercially feasible.
摘要翻译： 提供了用于回收和再循环含氘气体的新方法和系统。 根据本发明的方法，将含氘原料气体引入室中。 从室中除去含有氘的废气。 将废气的氘浓度调整为规定值，由此生成浓度调节气体流。 最后，将浓度调节的气流作为含氘原料气体引入该室。 本发明例如在半导体器件的批量生产中可以使用氘，这在商业上是可行的。
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