公开(公告)号：US09627193B2

公开(公告)日：2017-04-18

申请号：US14511719

申请日：2014-10-10

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC分类号： C07F7/02 ,  H01L21/02 ,  C09D1/00 ,  C07F7/10 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20130060061A1

公开(公告)日：2013-03-07

申请号：US13668545

申请日：2012-11-05

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Steven Gerard Mayorga ,  Mark Leonard O'Neill ,  Kelly Ann Chandler

IPC分类号： C07F7/18

CPC分类号： C07F7/20 ,  C07F7/1804

摘要： The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

摘要翻译： 本发明提供一种包含二乙氧基甲基硅烷的有机硅组合物，其溶解的残留氯化物的浓度以及溶解的残余氯化物清除剂的浓度，当与包含二乙氧基甲基硅烷的另一种组合物组合时，其不产生不需要的氯化物盐沉淀物。

公开(公告)号：US09809711B2

公开(公告)日：2017-11-07

申请号：US13738482

申请日：2013-01-10

申请人： Air Products and Chemicals, Inc.

发明人： Manchao Xiao ,  Ronald Martin Pearlstein ,  Richard Ho ,  Xinjian Lei ,  Steven Gerard Mayorga ,  Daniel P. Spence

IPC分类号： C09D1/00 ,  H01L21/02 ,  B65B1/04 ,  C08G77/04

CPC分类号： C09D1/00 ,  B65B1/04 ,  C08G77/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282

摘要： A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR1)nR24-n and a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR1)nR23-n; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R23-p(R1O)pSi—R3—Si(OR1)pR23-p and a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (R1O)mR22-m(X)Si—R3—Si(OR4)2R5 wherein at least one or all of the R1 and R2 substituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.

公开(公告)号：US20150024608A1

公开(公告)日：2015-01-22

申请号：US14511719

申请日：2014-10-10

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC分类号： H01L21/02

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

摘要翻译： 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

公开(公告)号：US08759563B2

公开(公告)日：2014-06-24

申请号：US13668545

申请日：2012-11-05

申请人： Air Products and Chemicals, Inc.

发明人： Steven Gerard Mayorga ,  Mark Leonard O'Neill ,  Kelly A. Chandler

IPC分类号： C07F7/18 ,  C07F7/04

CPC分类号： C07F7/20 ,  C07F7/1804

摘要： The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

摘要翻译： 本发明提供一种包含二乙氧基甲基硅烷的有机硅组合物，溶解的残留氯化物的浓度以及溶解的残余氯化物清除剂的浓度，当与包含二乙氧基甲基硅烷的另一种组合物组合时，其不产生不需要的氯化物盐沉淀。

公开(公告)号：US09337018B2

公开(公告)日：2016-05-10

申请号：US13902300

申请日：2013-05-24

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC分类号： C23C16/40 ,  H01L21/02 ,  C09D1/00 ,  C07F7/10 ,  C23C16/18 ,  C23C16/455 ,  C23C16/46

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.

摘要翻译： 一种通过选自化学气相沉积工艺和原子层沉积工艺的沉积工艺在衬底的至少一个表面上形成含硅膜的方法，该方法包括：将衬底的至少一个表面设置在 反应室; 引入至少一种包含由下式I表示的Si-N键，Si-Si键和Si-H3族的有机基二硅烷前体：其中R1和R2如本文所定义; 并将含氮源引入所述反应器中，其中所述至少一种有机氨基二硅烷前体和所述含氮源在所述至少一个表面上反应形成所述膜。

公开(公告)号：US20130323435A1

公开(公告)日：2013-12-05

申请号：US13902300

申请日：2013-05-24

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC分类号： C09D1/00

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

摘要翻译： 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

公开(公告)号：US20130243968A1

公开(公告)日：2013-09-19

申请号：US13795636

申请日：2013-03-12

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Manchao Xiao ,  Ronald Martin Pearlstein ,  Agnes Derecskei-Kovacs ,  Xinjian Lei ,  Richard Ho ,  Mark Leonard O'Neill ,  Daniel P. Spence ,  Steven Gerard Mayorga

IPC分类号： C09D5/00

CPC分类号： C09D5/00 ,  C23C18/122 ,  C23C18/1254 ,  C23C18/1295

摘要： A formulation comprising a first organosilane precursor and a halogenation reagent wherein at least a portion or all of the halogenation reagent reacts to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process.

摘要翻译： 一种包含第一有机硅烷前体和卤化试剂的制剂，其中至少部分或全部卤化试剂反应以提供第二有机硅烷前体。 还提供了从容易获得的纯物质原位产生这种制剂的方法。 还提供了使用制剂作为可流动气相沉积工艺的前体的方法。

公开(公告)号：US09613799B2

公开(公告)日：2017-04-04

申请号：US15073899

申请日：2016-03-18

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC分类号： C07F7/02 ,  C07F7/10 ,  H01L21/02 ,  C09D1/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20160203975A1

公开(公告)日：2016-07-14

申请号：US15073899

申请日：2016-03-18

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC分类号： H01L21/02 ,  C07F7/02 ,  C09D1/00

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

摘要翻译： 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。