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    Compositions and Processes for Depositing Carbon-Doped Silicon-Containing Films
    1.
    发明申请
    Compositions and Processes for Depositing Carbon-Doped Silicon-Containing Films 审中-公开
    用于沉积碳掺杂的含硅膜的组合物和方法

    公开(公告)号：US20160351389A1

    公开(公告)日：2016-12-01

    申请号：US15233018

    申请日：2016-08-10

    Applicant: Air Products and Chemicals, Inc.

    Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Jospeh Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

    IPC: H01L21/02 ,  C07F7/10 ,  C09D7/12

    CPC classification number: H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

    Abstract translation: 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。

    High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films
    2.
    发明申请
    High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films 审中-公开

    公开(公告)号：US20170256399A9

    公开(公告)日：2017-09-07

    申请号：US15248214

    申请日：2016-08-26

    Applicant: Air Products and Chemicals, Inc.

    Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill ,  Bing Han

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

    CPC classification number: H01L21/02164 ,  C07F7/10 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228

    Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of: R1R2mSi(NR3R4)nXp   I. wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group. a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; and R1R2mSi(OR3)n(OR4)qXp   II. wherein R1 and R2 areeach independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R3 and R4 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2; p is 0 to 2; and m+n+q+p=3.

    High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films
    3.
    发明申请
    High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films 审中-公开
    氧化硅薄膜的高温原子层沉积

    公开(公告)号：US20160365244A1

    公开(公告)日：2016-12-15

    申请号：US15248214

    申请日：2016-08-26

    Applicant: Air Products and Chemicals, Inc.

    Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill ,  Bing Han

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

    CPC classification number: H01L21/02164 ,  C07F7/10 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228

    Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of: R1R2mSi(NR3R4)nXp   I. wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group. a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; and R1R2mSi(OR3)n(OR4)qXp   II. wherein R1 and R2 areeach independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R3 and R4 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2; p is 0 to 2; and m+n+q+p=3.

    Abstract translation: 其中R 1和R 2独立地选自氢，直链或支链C 1至C 10烷基和C 6至C 10芳基; R3和R4各自独立地选自直链或支链C1至C10烷基和C6至C10芳基; 其中R3和R4连接形成环状环结构，或者R3和R4不连接形成环状结构; X是选自Cl，Br和I的卤素原子; m为0〜3; n为0〜2; q为0〜2; p为0〜2; m + n + q + p = 3。

    Methods to prepare silicon-containing films
    4.
    发明授权
    Methods to prepare silicon-containing films 有权
    制备含硅膜的方法

    公开(公告)号：US09502234B2

    公开(公告)日：2016-11-22

    申请号：US14193417

    申请日：2014-02-28

    Applicant: Air Products and Chemicals, Inc.

    Inventor： Manchao Xiao ,  Xinjian Lei ,  Bing Han ,  Mark Leonard O'Neill

    IPC: C07F7/02 ,  H01L21/02 ,  B01J19/00 ,  C09D183/04 ,  C23C16/30 ,  C23C16/44 ,  H01L21/316 ,  H01L29/00

    CPC classification number: H01L21/02216 ,  B01J19/00 ,  C07F7/02 ,  C09D183/04 ,  C23C16/30 ,  C23C16/44 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/316 ,  H01L29/00

    Abstract: Described herein are methods of forming dielectric films such as non-porous dielectric films, comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. Specifically the methods include silanes that have bulky alkoxy groups as well as SiH groups. Examples of such silanes used in the methods including di-tert-pentoxysilane, di-tert-butoxysilane and silanes having the formula (H)2Si(OR)(OR1) wherein R is tert-butyl and R1 is selected from the group consisting of methyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, pentyl, isopentyl, tert-pentyl and hexyl.

    Abstract translation: 这里描述的是形成介电膜的方法，例如无孔介电膜，包括硅，氧化物和任选的氮，碳，氢和硼。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。 具体地说，这些方法包括具有庞大的烷氧基以及SiH基团的硅烷。 在包括二叔戊氧基硅烷，二叔丁氧基硅烷和具有式（H）2 Si（OR）（OR 1）的硅烷的方法中使用的这种硅烷的实例，其中R是叔丁基，R 1选自 甲基，丙基，异丙基，丁基，异丁基，仲丁基，戊基，异戊基，叔戊基和己基。

    COMPOSITIONS AND METHODS FOR MAKING SILICON CONTAINING FILMS
    8.
    发明申请
    COMPOSITIONS AND METHODS FOR MAKING SILICON CONTAINING FILMS 审中-公开
    用于制造含硅薄膜的组合物和方法

    公开(公告)号：US20150014823A1

    公开(公告)日：2015-01-15

    申请号：US14383690

    申请日：2013-03-08

    Applicant: AIR PRODUCTS AND CHEMICALS, INC.

    Inventor： Anupama Mallikarjunan ,  Andrew David Jihnson ,  Meiliang Wang ,  Raymond Nicholas Vrtis ,  Bing Han ,  Xinjian Lei ,  Mark Leonard O'Neill

    IPC: H01L21/02 ,  H01L29/51

    Abstract: Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cm3 or greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25° C. to about 400° C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

    Abstract translation: 这里描述的是低温处理的高质量含硅膜。 还公开了在低温下形成含硅膜的方法。 在一个方面，提供了厚度为约2nm至约200nm且密度为约2.2g / cm 3或更大的含硅膜，其中通过选自以下的沉积工艺沉积含硅薄膜： 包括化学气相沉积（CVD），等离子体增强化学气相沉积（PECVD），循环化学气相沉积（CCVD），等离子体增强循环化学气相沉积（PECCVD，原子层沉积（ALD））和等离子体增强原子层沉积 ），并且使用选自二乙基硅烷，三乙基硅烷及其组合的烷基硅烷前体在约25℃至约400℃的一个或多个温度下进行气相沉积。

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