利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

24 条记录 (耗时 0.035 秒)

    PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD
    2.
    发明申请
    PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD 审中-公开
    具有超导电感天线和超高压气体分布的等离子体反应器

    公开(公告)号：US20080236490A1

    公开(公告)日：2008-10-02

    申请号：US11693089

    申请日：2007-03-29

    申请人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    发明人： ALEXANDER PATERSON ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    IPC分类号： C23C16/00

    CPC分类号： H01J37/3244 ,  H01J37/32091 ,  H01J37/321

    摘要： A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece.

    摘要翻译： 用于加工工件的等离子体反应器包括具有盖的气体分配喷头，具有面向盖的顶表面的歧管和与顶表面相对的底表面。 歧管顶表面中的顶表面通道形成从第一气体输入点延伸到顶表面通道的多个路径端的多个路径的第一组。 气体分配孔在相应的路径端轴向延伸穿过歧管。 歧管底表面中的底表面通道形成从每个气体分配孔处的位置延伸到多个气体分配路径端部的多个路径。 淋浴头还包括面向歧管底面的喷头片，并具有延伸穿过喷头片的多个气体喷射孔。

    Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
    5.
    发明授权
    Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency 有权
    具有可变频率的VHF电容耦合等离子体源的等离子体反应器装置

    公开(公告)号：US07645357B2

    公开(公告)日：2010-01-12

    申请号：US11410697

    申请日：2006-04-24

    申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

    发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

    IPC分类号： C23F1/00 ,  H01L19/00 ,  H05B31/26

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

    摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

    摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

    Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
    7.
    发明申请
    Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode 审中-公开
    中室气体分布板，调谐等离子体流量控制栅格和电极

    公开(公告)号：US20080178805A1

    公开(公告)日：2008-07-31

    申请号：US11998468

    申请日：2007-11-28

    申请人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

    发明人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

    IPC分类号： C23C16/513

    CPC分类号： H01J37/32422 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449

    摘要： A plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask. The reactor chamber has a ceiling, a side wall and a workpiece support pedestal inside the chamber and facing the ceiling along an axis of symmetry and defining a chamber volume between the pedestal and the ceiling. An RF plasma source power applicator is provided at the ceiling. An in-situ electrode body inside the chamber lies divides the chamber into upper and lower chamber regions. The in-situ electrode comprises plural flow-through passages extending parallel to the axis and having different opening sizes, the passages being radially distributed by opening size in accordance with a desired radial distribution of gas flow resistance through the in-situ electrode body.

    摘要翻译： 提供等离子体反应器来处理诸如半导体晶片或电介质掩模的工件。 反应器室具有在室内的天花板，侧壁和工件支撑基座，并且沿着对称轴面对天花板，并且限定基座和天花板之间的室容积。 在天花板处设置RF等离子体源功率施加器。 室内的原位电极体将腔室分为上腔室和下腔室。 原位电极包括平行于轴线延伸并且具有不同开口尺寸的多个流通通道，根据通过原位电极体的气流阻力的期望径向分布，通道径向分布为开口尺寸。

    PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION
    10.
    发明申请
    PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION 有权
    通过调整等离子体分配的气体分配板进行电感耦合等离子体处理

    公开(公告)号：US20080206483A1

    公开(公告)日：2008-08-28

    申请号：US11679122

    申请日：2007-02-26

    申请人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    发明人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    IPC分类号： H05H1/00

    CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244

    摘要： A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.

    摘要翻译： 一种在等离子体反应器的腔室中处理工件的方法，该等离子体反应器具有通过天花板中的气体分配板将工艺气体引入室中，该顶板覆盖工件。 通过将气体流从第一气体输入分配到延伸穿过气体分配板的歧管的多个气体分配孔，并将气体流从多个气体分配孔中的每一个分配到多个气体喷射孔中，从而引入气体 气体分配板。 该方法还包括将气体分配板中的气流限制在具有小于完整圆的对称轴的弧形长度的路径上。 该方法还包括通过气体分布将等离子体源功率电容和电感耦合到腔室中。 该方法还包括通过调节电容耦合VHF功率和电感耦合功率的量之间的比例来调节处理区域中的等离子体离子密度径向分布。