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    PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION
    1.
    发明申请
    PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION 有权
    通过调整等离子体分配的气体分配板进行电感耦合等离子体处理

    公开(公告)号：US20080206483A1

    公开(公告)日：2008-08-28

    申请号：US11679122

    申请日：2007-02-26

    申请人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    发明人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

    IPC分类号： H05H1/00

    CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244

    摘要： A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.

    摘要翻译： 一种在等离子体反应器的腔室中处理工件的方法，该等离子体反应器具有通过天花板中的气体分配板将工艺气体引入室中，该顶板覆盖工件。 通过将气体流从第一气体输入分配到延伸穿过气体分配板的歧管的多个气体分配孔，并将气体流从多个气体分配孔中的每一个分配到多个气体喷射孔中，从而引入气体 气体分配板。 该方法还包括将气体分配板中的气流限制在具有小于完整圆的对称轴的弧形长度的路径上。 该方法还包括通过气体分布将等离子体源功率电容和电感耦合到腔室中。 该方法还包括通过调节电容耦合VHF功率和电感耦合功率的量之间的比例来调节处理区域中的等离子体离子密度径向分布。

    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
    4.
    发明授权
    High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck 有权
    高AC电流高RF功率AC-RF去耦滤波器用于等离子体反应器加热静电卡盘

    公开(公告)号：US07777152B2

    公开(公告)日：2010-08-17

    申请号：US11671927

    申请日：2007-02-06

    申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

    IPC分类号： B23K9/02 ,  H01P5/08 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

    摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

    摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

    HIGH AC CURRENT HIGH RF POWER AC-RF DECOUPLING FILTER FOR PLASMA REACTOR HEATED ELECTROSTATIC CHUCK
    5.
    发明申请
    HIGH AC CURRENT HIGH RF POWER AC-RF DECOUPLING FILTER FOR PLASMA REACTOR HEATED ELECTROSTATIC CHUCK 有权
    用于等离子体反应器加热静电切割机的高交流电流高频功率AC-RF解码滤波器

    公开(公告)号：US20070284344A1

    公开(公告)日：2007-12-13

    申请号：US11671927

    申请日：2007-02-06

    申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

    发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

    IPC分类号： B23K9/00

    CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

    摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

    摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围内的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

    Tandem etch chamber plasma processing system
    6.
    发明授权
    Tandem etch chamber plasma processing system 有权
    串联腐蚀室等离子体处理系统

    公开(公告)号：US06962644B2

    公开(公告)日：2005-11-08

    申请号：US10241653

    申请日：2002-09-10

    申请人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    发明人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    IPC分类号： H01L21/00 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

    CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32458

    摘要： A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.

    摘要翻译： 一种用于处理晶片的方法和装置，包括限定多个隔离处理区域的腔室。 隔离处理区域具有上端和下端。 所述室还包括多个等离子体产生装置，每个等离子体产生装置邻近每个隔离处理区域的上端设置，并且连接到每个等离子体产生装置的多个电源中的一个。 多个电源的输出频率是相位和/或频率锁定在一起的。 另外，腔室包括多个气体分配组件。 每个气体分配组件设置在每个隔离的处理区域内。 可移动的晶片支撑件设置在每个隔离的处理区域内以支撑用于等离子体处理的晶片。 可移动晶片支撑件包括耦合到偏置电源的偏置电极，偏置电源被配置为控制等离子体离子朝向可移动晶片支撑件的轰击。

    Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
    7.
    发明授权
    Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates 有权
    具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统

    公开(公告)号：US07718538B2

    公开(公告)日：2010-05-18

    申请号：US11677472

    申请日：2007-02-21

    申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32009 ,  H01L21/3065 ,  H01L21/32137

    摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

    摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

    PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES
    8.
    发明申请
    PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES 有权
    具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统

    公开(公告)号：US20080197110A1

    公开(公告)日：2008-08-21

    申请号：US11677472

    申请日：2007-02-21

    申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32009 ,  H01L21/3065 ,  H01L21/32137

    摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

    摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。